Abstract: A semiconductor device includes a semiconductor substrate, a gate electrode, a source/drain contact, a conductive structure, an interlayer dielectric (ILD) layer, an etch stop layer, and a dielectric liner. The semiconductor substrate has a channel region and a source/drain region. The gate electrode is over the channel region. The source/drain contact is over the source/drain region. The conductive structure is over a top surface of the source/drain contact. The ILD layer surrounds the conductive structure and over the gate electrode. The etch stop layer is over the conductive structure and the ILD layer. The etch stop layer comprises a material different from that of the ILD layer. A dielectric liner at a sidewall the conductive structure. The dielectric liner extends from the top surface of the source/drain contact to a bottom surface of the etch stop layer.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A method for measuring network throughput is provided. The method comprises the following steps: exchanging messages with a time synchronization protocol server in compliance with a time synchronization protocol, synchronizing a slave clock with a master clock of the time synchronization protocol server according to time information related to the messages, and calculating at least one network throughput according to the time information and size information related to the messages.

Abstract: A network device is provided. The network device is connected to a number of slave network devices. Each slave network device communicates with the network device by using an Internet protocol (IP) address. The network device includes an Internet protocol security (IPsec) module and a network address translation (NAT) module. The IPsec module establishes an IPsec tunnel to a network gateway in the Internet and retrieves an IPsec IP address corresponding to the IPsec tunnel. The NAT module converts the IP addresses of the slave network devices to the IPsec IP address, such that the slave network devices use the IPsec IP address to communicate with the network gateway through the IPsec tunnel.

Abstract: A method for measuring network throughput is provided. The method comprises the following steps: exchanging messages with a time synchronization protocol server in compliance with a time synchronization protocol, synchronizing a slave clock with a master clock of the time synchronization protocol server according to time information related to the messages, and calculating at least one network throughput according to the time information and size information related to the messages.

Abstract: A network device is provided. The network device is connected to a number of slave network devices. Each slave network device communicates with the network device by using an Internet protocol (IP) address. The network device includes an Internet protocol security (IPsec) module and a network address translation (NAT) module. The IPsec module establishes an IPsec tunnel to a network gateway in the Internet and retrieves an IPsec IP address corresponding to the IPsec tunnel. The NAT module converts the IP addresses of the slave network devices to the IPsec IP address, such that the slave network devices use the IPsec IP address to communicate with the network gateway through the IPsec tunnel.