Patents by Inventor Chia-His Chen

Chia-His Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Poly opening polish process
    Patent number: 8513128
    Abstract: A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit.
    Type: Grant
    Filed: June 17, 2011
    Date of Patent: August 20, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Chun-Wei Hsu, Po-Cheng Huang, Teng-Chun Tsai, Chia-Lin Hsu, Chih-Hsun Lin, Chang-Hung Kung, Chia-His Chen, Yen-Ming Chen
  • POLY OPENING POLISH PROCESS
    Publication number: 20120322265
    Abstract: A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit.
    Type: Application
    Filed: June 17, 2011
    Publication date: December 20, 2012
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Wei HSU, Po-Cheng Huang, Teng-Chun Tsai, Chia-Lin Hsu, Chih-Hsun Lin, Chang-Hung Kung, Chia-His Chen, Yen-Ming Chen