Abstract: A semiconductor structure includes a first FinFET device disposed over a substrate, a second FinFET device disposed over the substrate, and an isolation structure. The first FinFET device includes at least a first fin and a first metal gate structure over the first fin. The second FinFET device includes at least a second fin and a second metal gate structure over the second fin. The isolation structure is disposed between the first metal gate structure and the second metal gate structure. The isolation structure includes a dielectric feature and a dielectric layer. The dielectric layer is between the dielectric feature and the first metal gate structure, between the dielectric feature and the second metal gate structure, and between the dielectric feature and the substrate. The dielectric feature and the dielectric layer include different materials and different thicknesses.

Abstract: A semiconductor structure includes a first FinFET device disposed over a substrate, a second FinFET device disposed over the substrate, and an isolation structure. The first FinFET device includes at least a first fin and a first metal gate structure over the first fin. The second FinFET device includes at least a second fin and a second metal gate structure over the second fin. The isolation structure is disposed between the first metal gate structure and the second metal gate structure. The isolation structure includes a dielectric feature and a dielectric layer. The dielectric layer is between the dielectric feature and the first metal gate structure, between the dielectric feature and the second metal gate structure, and between the dielectric feature and the substrate. The dielectric feature and the dielectric layer include different materials and different thicknesses.

Abstract: Semiconductor devices and methods of manufacture are discussed. In an embodiment, a method of manufacturing a semiconductor device includes: forming first nanostructures from a first material over a substrate; forming second nanostructures from a second material different from the first material over the substrate, wherein the first nanostructures and the second nanostructures alternate vertically above the substrate; removing the first nanostructures; after the removing the first nanostructures forming an interposer in between the second nanostructures; after the forming the interposer forming a first source/drain region over the substrate and in direct physical contact with the second nanostructures; and removing the interposer exposing surfaces of each of the second nanostructures.

Abstract: A semiconductor structure includes a first FinFET device disposed over a substrate, a second FinFET device disposed over the substrate, and an isolation structure. The first FinFET device includes at least a first fin and a first metal gate structure over the first fin. The second FinFET device includes at least a second fin and a second metal gate structure over the second fin. The isolation structure is disposed between the first metal gate structure and the second metal gate structure. The isolation structure includes a dielectric feature and a dielectric layer. The dielectric layer is between the dielectric feature and the first metal gate structure, between the dielectric feature and the second metal gate structure, and between the dielectric feature and the substrate. The dielectric feature and the dielectric layer include different materials and different thicknesses.

Abstract: A biosensor includes a transistor and a reactive electrode. The transistor has a source, a drain and a gate surface disposed therebetween. The reactive electrode is spaced apart from the gate surface of the transistor, has a receptor immobilized thereon for specific binding with an analyte in a liquid sample, and is configured to contact the liquid sample together with the gate surface of the transistor.

Abstract: A method for measuring free radical comprises providing a sensor including a substrate and a conductive polymer layer, wherein the conductive polymer layer is configured on the substrate and made of conductive polymer; applying a liquid sample with free radical to the sensor so that the conductive polymer layer is covered with the liquid sample and the conductivity of the conductive polymer layer is lowered due to oxidation of the conductive polymer by free radical; and calculating the concentration of the free radical in the liquid sample based on the conductivity change rate of the conductive polymer before and after the liquid sample is applied to the conductive polymer. The present invention has advantages including low cost, small size, and ease of operation, which make it a good candidate for detecting hydroxyl radicals for oxidative stress studies.

Abstract: A resistive sensor for an analyte comprises a substrate, a conductive polymer layer and an oxidase layer. Hydrogen peroxide is produced via the reaction between analyte and oxidase when a liquid sample is applied to the sensor of the present invention. The produced hydrogen peroxide can oxidize peroxidase, which can be reduced by oxidizing the conductive polymer, thus resulting in decreased conductivity of the conductive polymer for determining the analyte concentration in the liquid sample. The present invention may be used for developing miniaturized and disposable electronic microsensors with high sensitivity and fast response, which can detect analyte level in typical physiological environment for routine monitoring.

Abstract: A biosensor includes a transistor and a reactive electrode. The transistor has a source, a drain and a gate surface disposed therebetween. The reactive electrode is spaced apart from the gate surface of the transistor, has a receptor immobilized thereon for specific binding with an analyte in a liquid sample, and is configured to contact the liquid sample together with the gate surface of the transistor.

Abstract: A resistive sensor for an analyte comprises a substrate, a conductive polymer layer and an oxidase layer. Hydrogen peroxide is produced via the reaction between analyte and oxidase when a liquid sample is applied to the sensor of the present invention. The produced hydrogen peroxide can oxidize peroxidase, which can be reduced by oxidizing the conductive polymer, thus resulting in decreased conductivity of the conductive polymer for determining the analyte concentration in the liquid sample. The present invention may be used for developing miniaturized and disposable electronic microsensors with high sensitivity and fast response, which can detect analyte level in typical physiological environment for routine monitoring.

Abstract: A method for measuring free radical comprises providing a sensor including a substrate and a conductive polymer layer, wherein the conductive polymer layer is configured on the substrate and made of conductive polymer; applying a liquid sample with free radical to the sensor so that the conductive polymer layer is covered with the liquid sample and the conductivity of the conductive polymer layer is lowered due to oxidation of the conductive polymer by free radical; and calculating the concentration of the free radical in the liquid sample based on the conductivity change rate of the conductive polymer before and after the liquid sample is applied to the conductive polymer. The present invention has advantages including low cost, small size, and ease of operation, which make it a good candidate for detecting hydroxyl radicals for oxidative stress studies.