Abstract: A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.

Abstract: A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.

Abstract: An online video and audio editing method and system can create edited final products by performing video and audio editing via a communication network. The system includes a server, which provides downloadable operator interface software; and a client terminal, which is connected with the server via a communication network. The client terminal downloads the operator interface software from the server to allow selection of target files, and generation of an editing result file by recording the editing information of each selected target file in a text format. The editing information is transmitted back to the server, and includes a priority order, a time to start playback, and a playback length of each selected target file. The server synthesizes all target files in accordance with the editing result file to create the edited final product.

Abstract: A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.

Abstract: A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.

Abstract: An online video and audio editing method and system can create edited final products by performing video and audio editing via a communication network. The system includes a server, which provides downloadable operator interface software; and a client terminal, which is connected with the server via a communication network. The client terminal downloads the operator interface software from the server to allow selection of target files, and generation of an editing result file by recording the editing information of each selected target file in a text format. The editing information is transmitted back to the server, and includes a priority order, a time to start playback, and a playback length of each selected target file. The server synthesizes all target files in accordance with the editing result file to create the edited final product.