Patents by Inventor Chia-Hong Chin

Chia-Hong Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation method of SiGe HBT
    Patent number: 7049240
    Abstract: A method for forming a SiGe HBT, which combines a SEG and Non-SEG growth, is disclosed. The SiGe base layer is deposited by a Non-SEG method. Then, the first-emitter layer is developed directly upon the SiGe base layer that has a good interface quality between the base-emitter. Next, a second poly silicon layer, which has a dopant concentration range within 1E19 to 1E21 (atom/cc), is deposited by SEG method. It not only reduces the resistance of the SiGe base layer, but also avoids the annealing that may influence the performance of the device.
    Type: Grant
    Filed: November 10, 2003
    Date of Patent: May 23, 2006
    Assignee: United Microelectronics Corp.
    Inventors: Cheng-Wen Fan, Hua-Chou Tseng, Chia-Hong Chin, Chun-Yi Lin, Cheng-Choug Hung
  • Formation method of SiGe HBT
    Publication number: 20050101115
    Abstract: A method for forming a SiGe HBT, which combines a SEG and Non-SEG growth, is disclosed. The SiGe base layer is deposited by a Non-SEG method. Then, the first-emitter layer is developed directly upon the SiGe base layer that has a good interface quality between the base-emitter. Next, a second poly silicon layer, which has a dopant concentration range within 1E19 to 1E21 (atom/cc), is deposited by SEG method. It not only reduces the resistance of the SiGe base layer, but also avoids the annealing that may influence the performance of the device.
    Type: Application
    Filed: November 10, 2003
    Publication date: May 12, 2005
    Inventors: Cheng-Wen Fan, Hua-Chou Tseng, Chia-Hong Chin, Chun-Yi Lin, Cheng-Choug Hung