Patents by Inventor Chia-Hsin TAI

Chia-Hsin TAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming conductive structure in semiconductor structure
    Patent number: 9972526
    Abstract: A method for manufacturing a semiconductor structure is provided. The method includes forming a mask layer over a substrate, forming a material layer over the mask layer, forming a first blocking structure and a second blocking structure in the material layer separated from each other, and forming a first opening and a second opening in the material layer aligned with the first blocking structure. The method further includes forming a first spacer on sidewalls of the first opening and a second spacer on sidewalls of the second opening, forming a third opening and a fourth opening in the material layer aligned with the second blocking structure, etching the mask layer through the first opening, the second opening, the third opening, and the fourth opening.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: May 15, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hsin Tai, Chih-Ching Cheng, Fang-Yi Wu, Yi-Wei Chiu
  • METHOD FOR FORMING CONDUCTIVE STRUCTURE IN SEMICONDUCTOR STRUCTURE
    Publication number: 20180033686
    Abstract: A method for manufacturing a semiconductor structure is provided. The method includes forming a mask layer over a substrate, forming a material layer over the mask layer, forming a first blocking structure and a second blocking structure in the material layer separated from each other, and forming a first opening and a second opening in the material layer aligned with the first blocking structure. The method further includes forming a first spacer on sidewalls of the first opening and a second spacer on sidewalls of the second opening, forming a third opening and a fourth opening in the material layer aligned with the second blocking structure, etching the mask layer through the first opening, the second opening, the third opening, and the fourth opening.
    Type: Application
    Filed: July 29, 2016
    Publication date: February 1, 2018
    Inventors: Chia-Hsin TAI, Chih-Ching CHENG, Fang-Yi WU, Yi-Wei CHIU