Abstract: A semiconductor device includes first nanostructures vertically separated from one another, a first gate structure wrapping around each of the first nanostructures, and second nanostructures vertically separated from one another. The semiconductor device also includes a second gate structure wrapping around the second nanostructures, a first drain/source structure coupled to a first end of the first nanostructures, a second drain/source structure coupled to both of a second end of the first nanostructures and a first end of the second nanostructures, and a third drain/source structure coupled to a second end of the second nanostructures. The first drain/source structure has a first doping type, the second and third drain/source structures have a second doping type, and the first doping type is opposite to the second doping type.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A system and method for manufacturing a memory device is provided. A preferred embodiment comprises manufacturing a flash memory device with a tunneling layer. The tunneling layer is formed by introducing a bonding agent into the dielectric material to bond with and reduce the number of dangling bonds that would otherwise be present. Further embodiments include initiating the formation of the tunneling layer without the bonding agent and then introducing a bonding agent containing precursor and also include a reduced concentration region formed in the tunneling layer adjacent to a substrate.

Abstract: A system and method for manufacturing a memory device is provided. A preferred embodiment comprises manufacturing a flash memory device with a tunneling layer. The tunneling layer is formed by introducing a bonding agent into the dielectric material to bond with and reduce the number of dangling bonds that would otherwise be present. Further embodiments include initiating the formation of the tunneling layer without the bonding agent and then introducing a bonding agent containing precursor and also include a reduced concentration region formed in the tunneling layer adjacent to a substrate.

Abstract: A system and method for manufacturing a memory device is provided. A preferred embodiment comprises manufacturing a flash memory device with a tunneling layer. The tunneling layer is formed by introducing a bonding agent into the dielectric material to bond with and reduce the number of dangling bonds that would otherwise be present. Further embodiments include initiating the formation of the tunneling layer without the bonding agent and then introducing a bonding agent containing precursor and also include a reduced concentration region formed in the tunneling layer adjacent to a substrate.

Abstract: A system and method for manufacturing a memory device is provided. A preferred embodiment comprises manufacturing a flash memory device with a tunneling layer. The tunneling layer is formed by introducing a bonding agent into the dielectric material to bond with and reduce the number of dangling bonds that would otherwise be present. Further embodiments include initiating the formation of the tunneling layer without the bonding agent and then introducing a bonding agent containing precursor and also include a reduced concentration region formed in the tunneling layer adjacent to a substrate.

Abstract: A holder apparatus includes a handhold formed on an end thereof for holding and a barrel section extending from another end thereof. A clamping section is formed from the front end of the barrel section opposite to the handhold and includes two jaw portions joined together, two limited grooves respectively formed in and extending along the two jaw portions, two inner rim portions respectively defined against the two limited grooves and two clamping edges respectively formed on the inner wall of the two jaw portions related to the two limited grooves. The clamping edges grip a neck of a sprayer and support the bottom of a rim of a sprayer. A trigger element is pivotally connected to the barrel section. A C-shaped spring is disposed in the two limited grooves and grips the inner rim portions related to the two clamping edges.

Abstract: A holder apparatus comprises a handhold formed on an end thereof for holding; a barrel section extending from another end thereof; a clamping section formed from the front end of the barrel section opposite to the handhold and including two jaw portions joined together, two limited grooves respectively formed in and extending along the jaw portions, two inner rim portions respectively defined against the limited grooves and two clamping edges respectively formed on the inner wall of the jaw portions related to the limited grooves, with the clamping edges gripping a neck of a sprayer and supporting the bottom of a rim of a sprayer; a trigger element pivotally connected to the barrel section; a C-shaped spring disposed in the limited grooves and gripping the inner rim portions related to the clamping edges.

Abstract: A temperature controlling protection system for a heater of the wet etching device has a temperature controlling protection circuit and a heating ON/OFF controller, in which the temperature controlling circuit has an OR gate, an AND gate and a NOT gate. When the temperature controlling protection circuit receives signals from the wet etching device, such as a level signal for a level sensor, an overheated signal for a temperature sensor, a ON/OFF signal for an acid discharging switch, a protection signal and a caution signal for the heater 28 and output signal for a constant temperature controller, it is determined whether the heater of the wet etching device is actuated to provide heat to the reaction gas in the wet etching device.

Abstract: An apparatus for the removal of particles existing in exhaust gases by directly sprinkling the gases with water to congeal the particles. The apparatus also mixes surfactants into the water, and the mixture is driven by a pump to clean out the condensation deposited in a transmitting conduit in order to eliminate settled congealed particles that could block the transmitting conduit.