Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A sensing device including a substrate, a switching element, a sensing element and a common electrode is provided. The switching element is disposed on the substrate and includes a source electrode. The sensing element is disposed at one side of the switching element and includes a lower electrode, a photoelectric conversion layer and an upper electrode. The lower electrode is electrically connected to the source electrode. The photoelectric conversion layer is disposed on the lower electrode. The upper electrode is disposed on the photoelectric conversion layer. The common electrode is electrically connected to the upper electrode and belongs to the same film layer as the source electrode. A fabricating method of a sensing device is also provided.

Abstract: A photosensitive device substrate including a substrate, an active device, and a photosensitive device is provided. The active device and the photosensitive device are disposed on the substrate. The active device has a semiconductor pattern and a gate electrode. The semiconductor pattern is disposed between the substrate and the gate electrode. The photosensitive device is electrically connected to the active device. The photosensitive device has a photoelectric conversion layer and a first electrode and second electrode disposed on two opposite sides of the photoelectric conversion layer. The first electrode is located between the photoelectric conversion layer and the semiconductor pattern, and the material of the first electrode includes a metal oxide.

Abstract: An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.

Abstract: An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.