Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.

Abstract: A rigid substrate, a touch panel including the rigid substrate and a processing method of the rigid substrate are provided. The rigid substrate includes an ion strengthened surface layer completely covering the entire outer surface thereof. The rigid substrate has an etched wall, wherein an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall.

Abstract: A rigid substrate, a touch panel including the rigid substrate and a processing method of the rigid substrate are provided. The rigid substrate includes an ion strengthened surface layer completely covering the entire outer surface thereof. The rigid substrate has an etched wall, wherein an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall.

Abstract: A rigid substrate, a touch panel including the rigid substrate and a processing method of the rigid substrate are provided. The rigid substrate includes an ion strengthened surface layer completely covering the entire outer surface thereof. The rigid substrate has an etched wall, wherein an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall.

Abstract: A cover glass structure includes a glass substrate, a touch-sensing structure and a decorative layer. The glass substrate has at least one cutting section, and the cutting section is etched to form an etched structure. The touch-sensing structure is disposed on the glass substrate, and the decorative layer is disposed on the glass substrate.

Abstract: A cover glass structure includes a glass substrate, a touch-sensing structure and a decorative layer. The glass substrate has at least one cutting section, and the cutting section is polished to form a polished surface. The touch-sensing structure is disposed on the glass substrate, and the decorative layer is disposed on the glass substrate.

Abstract: A cover glass structure includes a glass substrate, a touch-sensing structure and a decorative layer. The glass substrate has at least one cutting section, and the cutting section is polished to form a polished surface. The touch-sensing structure is disposed on the glass substrate, and the decorative layer is disposed on the glass substrate.

Abstract: A rigid substrate, a touch panel including the rigid substrate, and a processing method of the rigid substrate are provided. The rigid substrate includes an ion strengthened surface layer completely covering the entire outer surface thereof. The rigid substrate has an etched wall, wherein an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall.

Abstract: A cover glass structure includes a glass substrate, a touch-sensing structure and a decorative layer. The glass substrate has at least one cutting section, and the cutting section is etched to form an etched structure. The touch-sensing structure is disposed on the glass substrate, and the decorative layer is disposed on the glass substrate.

Abstract: A cover glass structure includes a glass substrate, a touch-sensing structure and a decorative layer. The glass substrate has at least one cutting section, and the cutting section is polished to form a polished surface. The touch-sensing structure is disposed on the glass substrate, and the decorative layer is disposed on the glass substrate.