Abstract: A voltage tracking circuit includes first, second, third and fourth transistors. The first transistor is in a first well, and includes a first gate, a first drain and a first source coupled to a first voltage supply. The second transistor includes a second gate, a second drain and a second source. The second source is coupled to the first drain. The second gate is coupled to the first gate and a pad voltage terminal. The second body terminal is coupled to a first node. The third transistor includes a third gate, a third drain and a third source. The fourth transistor includes a fourth gate, a fourth drain and a fourth source. The fourth drain is coupled to the third source. The fourth source is coupled to the pad voltage terminal. The second transistor is in a second well different from the first well, and is separated from the first well in a first direction.

Abstract: A power semiconductor device includes a substrate, a main body and an electrode unit. The main body includes an active portion, an edge termination portion surrounding the active portion, and an insulating layer disposed on the edge termination portion. The edge termination portion includes a first-type semiconductor region, and a plurality of spaced-apart second-type semiconductor segments distributed in the first-type semiconductor region and arranged at intervals along a Y-direction directing from the insulating layer toward the substrate, and an X-direction directing from the active portion toward the edge termination portion. The electrode unit includes a first electrode and a second electrode.

Abstract: A power semiconductor device includes a substrate, a main body and an electrode unit. The main body includes an active portion, an edge termination portion surrounding the active portion, and an insulating layer disposed on the edge termination portion. The edge termination portion includes a first-type semiconductor region, and a plurality of spaced-apart second-type semiconductor segments distributed in the first-type semiconductor region and arranged at intervals along a Y-direction directing from the insulating layer toward the substrate, and an X-direction directing from the active portion toward the edge termination portion. The electrode unit includes a first electrode and a second electrode.

Abstract: A power semiconductor device includes a substrate, a main body, and an electrode unit. The main body includes an active portion disposed on the substrate, an edge termination portion, and an insulating layer disposed on the edge termination portion. The edge termination portion includes first-type semiconductor region, a second-type semiconductor region and a top surface. The first-type semiconductor region is adjacent to the active portion and has a first-type doping concentration decreased from the top surface toward the substrate. The electrode unit includes a first electrode disposed on the insulating layer, and a second electrode disposed on the substrate.

Abstract: A power semiconductor device includes a substrate, a main body, and an electrode unit. The main body includes an active portion disposed on the substrate, an edge termination portion, and an insulating layer disposed on the edge termination portion. The edge termination portion includes first-type semiconductor region, a second-type semiconductor region and a top surface. The first-type semiconductor region is adjacent to the active portion and has a first-type doping concentration decreased from the top surface toward the substrate. The electrode unit includes a first electrode disposed on the insulating layer, and a second electrode disposed on the substrate.

Abstract: A high voltage (HV) device and method for manufacturing the same are provided, at least comprising a substrate, an insulation formed on the substrate, a deep well formed in the insulation, an air layer formed in the insulation and disposed adjacent to the bottom surface of the deep well. A bottom surface of the deep well is spaced apart from the substrate. Also, the air layer, interposed between the deep well and the substrate, is spaced apart from the substrate. In one embodiment, an air layer further communicates with an atmosphere outside the HV device, which facilitates heat dissipation.

Abstract: A high voltage (HV) device and method for manufacturing the same are provided, at least comprising a substrate, an insulation formed on the substrate, a deep well formed in the insulation, an air layer formed in the insulation and disposed adjacent to the bottom surface of the deep well. A bottom surface of the deep well is spaced apart from the substrate. Also, the air layer, interposed between the deep well and the substrate, is spaced apart from the substrate. In one embodiment, an air layer further communicates with an atmosphere outside the HV device, which facilitates heat dissipation.

Abstract: A method for breaking the cell walls of microalgae includes cultivating microbes in a cultivating liquid, adding microalgae into the cultivating liquid to mix with the microbes, releasing a hydrolysis ferment from the microbes, hydrolyzing cell walls of the microalgae by the hydrolysis ferment of the microbes to decompose the cell walls of the microalgae into saccharide, and removing the microalgae from the cultivating liquid. Thus, the microbes release the hydrolysis ferment after the microalgae touch the microbes so as to hydrolyze and decompose the cell walls of the microalgae in a moderate manner without breaking the contents of the microalgae so that the contents of the microalgae can be released, absorbed and used completely.

Abstract: A method for breaking the cell walls of microalgae includes cultivating microbes in a cultivating liquid, adding microalgae into the cultivating liquid to mix with the microbes, releasing a hydrolysis ferment from the microbes, hydrolyzing cell walls of the microalgae by the hydrolysis ferment of the microbes to decompose the cell walls of the microalgae into saccharide, and removing the microalgae from the cultivating liquid. Thus, the microbes release the hydrolysis ferment after the microalgae touch the microbes so as to hydrolyze and decompose the cell walls of the microalgae in a moderate manner without breaking the contents of the microalgae so that the contents of the microalgae can be released, absorbed and used completely.

Abstract: An integrated technology of algae bio-diesel and algae ferment reuse includes providing algae, placing the algae into an optical reactor to grow the algae into rich algae, abstracting the rich algae to form abstracted algae and fat, placing the abstracted algae into a ferment tank so that the abstracted algae are decomposed and fermented to form a fermented substance and a fermented liquid, and making the fermented substance and the fermented liquid into a by-product. Thus, the algae produce carbon dioxide during the fermenting process, so that the carbon dioxide produced by the abstracted algae in the ferment tank is supplied to the algae in the optical reactor to form a breathing cycle between the optical reactor and the ferment tank so as to promote the growth of the algae simultaneously.