Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A bonded assembly includes an interposer; a semiconductor die that is attached to the interposer and including a planar horizontal bottom surface and a contoured sidewall; a high bandwidth memory (HBM) die that is attached to the interposer; and a dielectric material portion contacting the semiconductor die and the interposer. The contoured sidewall includes a vertical sidewall segment and a non-horizontal, non-vertical surface segment that is adjoined to a bottom edge of the vertical sidewall segment and is adjoined to an edge of the planar horizontal bottom surface of the semiconductor die. The vertical sidewall segment and the non-horizontal, non-vertical surface segment are in contact with the dielectric material portion. The contoured sidewall may provide a variable lateral spacing from the HBM die to reduce local stress in a portion of the HBM die that is proximal to the interposer.

Abstract: The present invention provides a technology which allows ensuring a high level of reliability and achieving a high aperture ratio. An active matrix substrate includes: a drain electrode extension section connected to a drain electrode of a switching element and made of an oxide semiconductor which has been made conductive; and a storage capacitor electrode overlapping with at least a portion of the drain electrode extension section, at least a portion of the storage capacitor electrode being light-transmissive.

Abstract: The present invention provides a technology which allows ensuring a high level of reliability and achieving a high aperture ratio. An active matrix substrate includes: a drain electrode extension section connected to a drain electrode of a switching element and made of an oxide semiconductor which has been made conductive; and a storage capacitor electrode overlapping with at least a portion of the drain electrode extension section, at least a portion of the storage capacitor electrode being light-transmissive.

Abstract: The present invention provides an Intelligent Engineering Data Analysis (I-EDA) system and method to help prevent low wafer yield and prevent occurrences of abnormal events. The I-EDA has a non-conforming wafer tracing (NCWT) system that operates to correlate occurrences of abnormal events with low wafer yield. The method generally has the steps of performing a fabrication operation on wafers disposed within a wafer lot; determining if an abnormal event occurred while performing the fabrication operation on the wafers disposed within the wafer lot; using a NCWT to determine a statistical correlation between an occurrence of an abnormal event and a wafer yield of the wafers being processed during the occurrence of the abnormal event if the abnormal event occurred during processing of the wafers disposed within the wafer lot; and using the determined statistical correlation to analyze the fabrication process and thereby improve wafer yield.

Abstract: The present invention provides an Intelligent Engineering Data Analysis (I-EDA) system and method to help prevent low wafer yield and prevent occurrences of abnormal events. The I-EDA has a non-conforming wafer tracing (NCWT) system that operates to correlate occurrences of abnormal events with low wafer yield. The method generally has the steps of performing a fabrication operation on wafers disposed within a wafer lot; determining if an abnormal event occurred while performing the fabrication operation on the wafers disposed within the wafer lot; using a NCWT to determine a statistical correlation between an occurrence of an abnormal event and a wafer yield of the wafers being processed during the occurrence of the abnormal event if the abnormal event occurred during processing of the wafers disposed within the wafer lot; and using the determined statistical correlation to analyze the fabrication process and thereby improve wafer yield.