Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A bonded assembly includes an interposer; a semiconductor die that is attached to the interposer and including a planar horizontal bottom surface and a contoured sidewall; a high bandwidth memory (HBM) die that is attached to the interposer; and a dielectric material portion contacting the semiconductor die and the interposer. The contoured sidewall includes a vertical sidewall segment and a non-horizontal, non-vertical surface segment that is adjoined to a bottom edge of the vertical sidewall segment and is adjoined to an edge of the planar horizontal bottom surface of the semiconductor die. The vertical sidewall segment and the non-horizontal, non-vertical surface segment are in contact with the dielectric material portion. The contoured sidewall may provide a variable lateral spacing from the HBM die to reduce local stress in a portion of the HBM die that is proximal to the interposer.

Abstract: A high-throughput automated preprocessing method and a system are applied to a nucleic acid preprocessing apparatus including a control system, a sample transfer area, a nucleic acid extraction area, and a reagent setup area. The control system includes a user interface and guides a user to set up on the user interface. In the sample transfer area, the method includes steps of: a user selecting a sampling tube type, a test protocol and an extraction protocol on the user interface, and the control system performing a sample transfer task. In the nucleic acid extraction area, the method includes steps of: the control system performing a nucleic acid extraction task based on the selected extraction protocol. In the reagent setup area, the method includes steps of: the control system performing a reagent deployment task based on the selected test protocol, and the control system performing a nucleic acid transfer task.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: The present disclosure provides a spraying system and a using method thereof. The spraying system includes a lifting apparatus and a spraying apparatus. The spraying apparatus connects to the lifting apparatus and includes a stage, a multi-axis transfer mechanism, a spraying component, a driving component, a surface profile detector, and a controlling component. The multi-axis transfer mechanism is disposed on the stage. The spraying component is disposed on the multi-axis transfer mechanism and the stage. The driving component is disposed on the stage and connects to the lifting apparatus. The surface profile detector is disposed on the stage and scans an area to be sprayed to obtain scanning data. The controlling component is disposed on the stage and controls the lifting apparatus, the spraying component, and the driving component according to the scanning data and pre-stored initial data.

Abstract: When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.

Abstract: A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

Abstract: The present disclosure provides a spraying system and a using method thereof. The spraying system includes a lifting apparatus and a spraying apparatus. The spraying apparatus connects to the lifting apparatus and includes a stage, a multi-axis transfer mechanism, a spraying component, a driving component, a surface profile detector, and a controlling component. The multi-axis transfer mechanism is disposed on the stage. The spraying component is disposed on the multi-axis transfer mechanism and the stage. The driving component is disposed on the stage and connects to the lifting apparatus. The surface profile detector is disposed on the stage and scans an area to be sprayed to obtain scanning data. The controlling component is disposed on the stage and controls the lifting apparatus, the spraying component, and the driving component according to the scanning data and pre-stored initial data.

Abstract: A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

Abstract: Disclosed is an assembly manufacturing method comprising: cutting a prepreg into a prepreg sheet according to a first parameter; moving the prepreg sheet to an assembly arrangement area according to a second parameter; superimposing a metal foil and a plate according to a fourth parameter to form a copper foil set; and assembling the copper foil set and the prepreg sheet according to a third parameter to form an assembly.

Abstract: Disclosed is an assembly manufacturing method comprising: cutting a prepreg into a prepreg sheet according to a first parameter; moving the prepreg sheet to an assembly arrangement area according to a second parameter; superimposing a metal foil and a plate according to a fourth parameter to form a copper foil set; and assembling the copper foil set and the prepreg sheet according to a third parameter to form an assembly.

Abstract: Disclosed is an assembly arrangement system, comprising a feeding unit, a conveyor unit and an assembling unit. The feeding unit comprises a supplying part and a cutting part. The supplying part is provided with a prepreg and configured to supply the prepreg to the cutting part. The cutting part cuts the prepreg to continuously form one or more prepreg sheets. The conveyor unit receives and conveys the prepreg sheet. The assembling unit comprises a metal foil supplying part, a first assembling part and a second assembling part. The second assembling part assembles a plate and a metal foil from the metal foil supplying part with the prepreg sheet from the conveyor unit into an assembly, and the first assembling part bears the assembly. Also provided is an assembly manufacturing method.

Abstract: A semiconductor memory device includes a substrate, having a plurality of cell regions, wherein the cell regions are parallel and extending along a first direction. A plurality of STI structures is disposed in the substrate, extending along the first direction to isolate the cell regions, wherein the STI structures have a uniform height lower than the substrate in the cell regions. A selection gate line is extending along a second direction and crossing over the cell regions and the STI structures. A control gate line is adjacent to the selection gate line in parallel extending along the second direction and also crosses over the cell regions and the STI structures. The selection gate line and the control gate line together form a two-transistor (2T) memory cell.

Abstract: Disclosed is an assembly arrangement system, comprising a feeding unit, a conveyor unit and an assembling unit. The feeding unit comprises a supplying part and a cutting part. The supplying part is provided with a prepreg and configured to supply the prepreg to the cutting part. The cutting part cuts the prepreg to continuously form one or more prepreg sheets. The conveyor unit receives and conveys the prepreg sheet. The assembling unit comprises a metal foil supplying part, a first assembling part and a second assembling part. The second assembling part assembles a plate and a metal foil from the metal foil supplying part with the prepreg sheet from the conveyor unit into an assembly, and the first assembling part bears the assembly. Also provided is an assembly manufacturing method.

Abstract: A method for forming an image sensor device is provided. First, a lens is provided and a first sacrificial element is formed thereon. An electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens. A peripheral region of the selected portion of the lens remains exposed. A light-shielding layer is formed on the electromagnetic interference pattern, second sacrificial element, and peripheral region of the selected portion of the lens. The second sacrificial element and light-shielding pattern are removed to expose the center region of the selected portion of the lens as a light transmitting region.

Abstract: A method for forming an image sensor device is provided. First, a lens is provided and a first sacrificial element is formed thereon. An electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens. A peripheral region of the selected portion of the lens remains exposed. A light-shielding layer is formed on the electromagnetic interference pattern, second sacrificial element, and peripheral region of the selected portion of the lens. The second sacrificial element and light-shielding pattern are removed to expose the center region of the selected portion of the lens as a light transmitting region.

Abstract: Disclosed is a method for forming an image sensor device. First, a lens is provided, and a first sacrificial element is then formed on the lens. Subsequently, an electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and the electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens, while a peripheral region of the selected portion of the lens remains exposed. Next, a light-shielding layer is formed on the electromagnetic interference pattern, the second sacrificial element, and the peripheral region of the selected portion of the lens. Thereafter, the second sacrificial element and the light-shielding pattern thereon are removed to expose the center region of the selected portion of the lens as a light transmitting region.

Abstract: The invention provides a camera module and a method for fabricating the same. A camera module includes an image sensor device chip having a plurality of solder balls on a bottom surface thereof. An optical lens is disposed on the image sensor device chip. A metal plate has a part that extending over the bottom surface of the image sensor device. A metal coating layer surrounds vertical surfaces of the optical lens and a top surface of the part of the metal plate. A first light shielding layer covers vertical surfaces of the metal coating layer.

Abstract: The invention provides a camera module and a method for fabricating the same. A camera module includes an image sensor device chip having a plurality of solder balls on a bottom surface thereof. An optical lens is disposed on the image sensor device chip. A metal plate has a part that extending over the bottom surface of the image sensor device. A metal coating layer surrounds vertical surfaces of the optical lens and a top surface of the part of the metal plate. A first light shielding layer covers vertical surfaces of the metal coating layer.

Abstract: Disclosed is a method for forming an image sensor device. First, a lens is provided, and a first sacrificial element is then formed on the lens. Subsequently, an electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and the electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens, while a peripheral region of the selected portion of the lens remains exposed. Next, a light-shielding layer is formed on the electromagnetic interference pattern, the second sacrificial element, and the peripheral region of the selected portion of the lens. Thereafter, the second sacrificial element and the light-shielding pattern thereon are removed to expose the center region of the selected portion of the lens as a light transmitting region.