Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

Abstract: A method for fabricating shallow trench isolation structures is provided. A patterned pad layer and a patterned mask layer are sequentially formed on a substrate, wherein the substrate includes a memory region and a periphery region. By using the patterned mask layer as a mask, the substrate is partially removed to form a plurality of trenches. A first liner layer is formed on the substrate to cover surfaces of the patterned mask layer, the patterned pad layer and the trenches. After removing the first liner layer in the periphery region, a pull-back process is performed on the patterned mask layer, and a pull-back amount of the patterned mask layer in the periphery region is larger than a pull-back amount of the patterned mask layer in the memory region. An insulating layer is formed in the trenches to form a plurality of shallow trench isolation structures.

Abstract: A structure of compartmental waterproof casing comprises a mother board and a casing body with multiple compartments. The compartments are closed and sealed in order to prevent moisture or other foreign substance from entering the casing body. Therefore the device installed inside the casing body is waterproof and protected against other damaging substance.

Abstract: A heat-dissipating mechanism includes a first heat-dissipating device, a first positioning device, a second heat-dissipating device and a second positioning device. The first heat-dissipating device is contacted with a memory module. The first positioning device is disposed on the first heat-dissipating device and includes a protrusion. The second heat-dissipating device is connected with the first heat-dissipating device. The second positioning device has a positioning rail formed in the second heat-dissipating device and corresponding to the protrusion. The second heat-dissipating device is connected with the first heat-dissipating device when the protrusion of the first positioning device is embedded into the positioning rail second positioning device.

Abstract: A heat-dissipating mechanism includes a first heat-dissipating device, a first positioning device, a second heat-dissipating device and a second positioning device. The first heat-dissipating device is contacted with a memory module. The first positioning device is disposed on the first heat-dissipating device and includes a protrusion. The second heat-dissipating device is connected with the first heat-dissipating device. The second positioning device has a positioning rail formed in the second heat-dissipating device and corresponding to the protrusion. The second heat-dissipating device is connected with the first heat-dissipating device when the protrusion of the first positioning device is embedded into the positioning rail second positioning device.

Abstract: A heat-dissipating mechanism includes a first heat-dissipating device, a first positioning device, a second heat-dissipating device and a second positioning device. The first heat-dissipating device is contacted with a memory module. The first positioning device is disposed on the first heat-dissipating device and includes a protrusion. The second heat-dissipating device is connected with the first heat-dissipating device. The second positioning device has a positioning rail formed in the second heat-dissipating device and corresponding to the protrusion. The second heat-dissipating device is connected with the first heat-dissipating device when the protrusion of the first positioning device is embedded into the positioning rail second positioning device.

Abstract: A heat-dissipating mechanism includes a first heat-dissipating device, a first positioning device, a second heat-dissipating device and a second positioning device. The first heat-dissipating device is contacted with a memory module. The first positioning device is disposed on the first heat-dissipating device and includes a protrusion. The second heat-dissipating device is connected with the first heat-dissipating device. The second positioning device has a positioning rail formed in the second heat-dissipating device and corresponding to the protrusion. The second heat-dissipating device is connected with the first heat-dissipating device when the protrusion of the first positioning device is embedded into the positioning rail second positioning device.