Patents by Inventor Chia-Jui Liang
Chia-Jui Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140349452Abstract: A method for manufacturing a semiconductor device is provided. A first stack structure and a second stack structure are formed to respectively cover a portion of a first fin structure and a second fin structure. Subsequently, a spacer is respectively formed on the sidewalls of the fin structures through an atomic layer deposition process and the composition of the spacers includes silicon carbon nitride. Afterwards, a interlayer dielectric is formed and etched so as to expose the hard mask layers. A mask layer is formed to cover the second stack structure and a portion of the dielectric layer. Later, the hard mask layer in the first stack structure is removed under the coverage of the mask layer. Then, a dummy layer in the first stack structure is replaced with a conductive layer.Type: ApplicationFiled: May 22, 2013Publication date: November 27, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Jun-Jie Wang, Po-Chao Tsao, Chia-Jui Liang, Shih-Fang Tzou, Chien-Ting Lin
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Publication number: 20140332920Abstract: A shallow trench isolation (STI) and method of forming the same is provided. The STI structure includes an upper insulating portion and a lower insulating portion, where the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. Apart of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled.Type: ApplicationFiled: July 21, 2014Publication date: November 13, 2014Inventors: En-Chiuan Liou, Po-Chao Tsao, Chia-Jui Liang, Jia-Rong Wu
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Publication number: 20140327055Abstract: A replacement gate process is disclosed. A substrate and a dummy gate structure formed on the substrate is provided, wherein the dummy gate structure comprises a dummy layer on the substrate, a hard mask layer on the dummy layer, spacers at two sides of the dummy layer and the hard mask layer, and a contact etch stop layer (CESL) covering the substrate, the spacers and the hard mask layer. The spacers and the CESL are made of the same material. Then, a top portion of the CESL is removed to expose the hard mask layer. Next, the hard mask layer is removed. Afterward, the dummy layer is removed to form a trench.Type: ApplicationFiled: May 3, 2013Publication date: November 6, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Jun-Jie Wang, Po-Chao Tsao, Chia-Jui Liang, Shih-Fang Tzou, Chien-Ting Lin, Cheng-Guo Chen, Ssu-I Fu, Yu-Hsiang Hung, Chung-Fu Chang
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Publication number: 20140322891Abstract: A method of forming shallow trench isolation structures including the steps of forming a trench in a substrate, filling a first insulating layer in the lower portion of the trench and defining a recess at the upper portion of the trench, forming a buffer layer on the sidewall of the recess, filling a second insulating layer in the recess, and performing a steam annealing process to transform the substrate surrounding the first insulating layer into an oxide layer.Type: ApplicationFiled: July 13, 2014Publication date: October 30, 2014Inventors: En-Chiuan Liou, Po-Chao Tsao, Chia-Jui Liang, Jia-Rong Wu
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Patent number: 8860181Abstract: A thin film resistor structure includes a substrate, a flat bottom ILD (inter layer dielectric) disposed on the substrate, a plurality of first contacts disposed in the bottom ILD, and each top surface of the first contacts is on the same level as a top surface of the bottom ILD; a flat top ILD disposed on the bottom ILD, a plurality of second contacts disposed in the top ILD, and each top surface of the second contacts is on the same level as a top surface of the top ILD, and a thin film resistor disposed between the bottom ILD and the top ILD.Type: GrantFiled: March 7, 2012Date of Patent: October 14, 2014Assignee: United Microelectronics Corp.Inventors: Ming-Te Wei, Po-Chao Tsao, Chen-Hua Tsai, Chien-Yang Chen, Chia-Jui Liang, Ming-Tsung Chen
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Publication number: 20140302677Abstract: A method for manufacturing semiconductor structures includes providing a substrate having a plurality of mandrel patterns and a plurality of dummy patterns, simultaneously forming a plurality of first spacers on sidewalls of the mandrel patterns and a plurality of second spacers on sidewalls of the dummy patterns, and removing the second spacers and the mandrel patterns to form a plurality of spacer patterns on the substrate.Type: ApplicationFiled: April 9, 2013Publication date: October 9, 2014Applicant: United Microelectronics Corp.Inventors: Ching-Ling Lin, Po-Chao Tsao, Chia-Jui Liang, Chien-Ting Lin
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Publication number: 20140295650Abstract: A method of fabricating a patterned structure of a semiconductor device is provided. First, a substrate having a first region and a second region is provided. A target layer, a hard mask layer and a first patterned mask layer are then sequentially formed on the substrate. A first etching process is performed by using the first patterned mask layer as an etch mask so that a patterned hard mask layer is therefore formed. Spacers are respectively formed on each sidewall of the patterned hard mask layer. Then, a second patterned mask layer is formed on the substrate. A second etching process is performed to etch the patterned hard mask layer in the second region. After the exposure of the spacers, the patterned hard mask layer is used as an etch mask and an exposed target layer is removed until the exposure of the corresponding substrate.Type: ApplicationFiled: March 27, 2013Publication date: October 2, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Jung Li, Chia-Jui Liang, Po-Chao Tsao, Ching-Ling Lin, En-Chiuan Liou
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Patent number: 8823132Abstract: A shallow trench isolation (STI) and method of forming the same is provided. The STI structure comprises an upper insulating portion and a lower insulating portion, wherein the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. A part of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled.Type: GrantFiled: January 8, 2013Date of Patent: September 2, 2014Assignee: United Microelectronics Corp.Inventors: En-Chiuan Liou, Po-Chao Tsao, Chia-Jui Liang, Jia-Rong Wu
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Publication number: 20140213028Abstract: An epitaxial process includes the following steps. A substrate including a first area and a second area is provided. A first gate and a second gate are formed respectively on the substrate of the first area and the second area. A first spacer and a second spacer are respectively formed on the substrate beside the first gate and the second gate at the same time. A first epitaxial structure is formed beside the first spacer and then a second epitaxial structure is formed beside the second spacer by the first spacer and the second spacer respectively.Type: ApplicationFiled: January 31, 2013Publication date: July 31, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Jui Liang, Po-Chao Tsao
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Publication number: 20140205953Abstract: A method for forming a semiconductor device comprises the following steps: first, a substrate is provided, a first photo-etching process is carried out with a first photomask to form at least one device structure and a plurality of compensation structures, wherein the first photomask comprises at least one device pattern and a plurality of dummy patterns. A photoresist layer is then formed on the device structure and each compensation structures; a second photo-etching process is then carried out with a second photomask to remove each compensation structure.Type: ApplicationFiled: January 22, 2013Publication date: July 24, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ching-Ling Lin, Po-Chao Tsao, Chia-Jui Liang, En-Chiuan Liou
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Publication number: 20140191358Abstract: A shallow trench isolation (STI) and method of forming the same is provided. The STI structure comprises an upper insulating portion and a lower insulating portion, wherein the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. A part of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled.Type: ApplicationFiled: January 8, 2013Publication date: July 10, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: En-Chiuan Liou, Po-Chao Tsao, Chia-Jui Liang, Jia-Rong Wu
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Publication number: 20140183642Abstract: A semiconductor structure includes a first gate and a second gate, a first spacer and a second spacer, two first epitaxial structures and two second epitaxial structures. The first gate and the second gate are located on a substrate. The first spacer and the second spacer are respectively located on the substrate beside the first gate and the second gate. The first epitaxial structures and the second epitaxial structures are respectively located in the substrate beside the first spacer and the second spacer, wherein the first spacer and the second spacer have different thicknesses, and the spacing between the first epitaxial structures is different from the spacing between the second epitaxial structures. Moreover, the present invention also provides a semiconductor process forming said semiconductor structure.Type: ApplicationFiled: December 27, 2012Publication date: July 3, 2014Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Jui Liang, Po-Chao Tsao
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Publication number: 20130234292Abstract: A thin film resistor structure includes a substrate, a flat bottom ILD (inter layer dielectric) disposed on the substrate, a plurality of first contacts disposed in the bottom ILD, and each top surface of the first contacts is on the same level as a top surface of the bottom ILD; a flat top ILD disposed on the bottom ILD, a plurality of second contacts disposed in the top ILD, and each top surface of the second contacts is on the same level as a top surface of the top ILD, and a thin film resistor disposed between the bottom ILD and the top ILD.Type: ApplicationFiled: March 7, 2012Publication date: September 12, 2013Inventors: Ming-Te Wei, Po-Chao Tsao, Chen-Hua Tsai, Chien-Yang Chen, Chia-Jui Liang, Ming-Tsung Chen
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Publication number: 20130234261Abstract: A semiconductor structure includes a gate structure disposed on a substrate and having an outer spacer, a recess disposed in the substrate and adjacent to the gate structure, a doped epitaxial material filling up the recess, a cap layer including an undoped epitaxial material and disposed on the doped epitaxial material, a lightly doped drain disposed below the cap layer and sandwiched between the doped epitaxial material and the cap layer, and a silicide disposed on the cap layer and covering the doped epitaxial material to cover the cap layer together with the outer spacer without directly contacting the lightly doped drain.Type: ApplicationFiled: March 12, 2012Publication date: September 12, 2013Inventors: Ming-Te Wei, Shin-Chuan Huang, Yu-Hsiang Hung, Po-Chao Tsao, Chia-Jui Liang, Ming-Tsung Chen, Chia-Wen Liang