Patents by Inventor Chia Jung CHU

Chia Jung CHU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DUAL FUNCTION ELECTRO-OPTICAL SILICON FIELD-EFFECT TRANSISTOR MOLECULAR SENSOR
    Publication number: 20220178873
    Abstract: A field effect transistor (FET)-based bio-sensing system is provided. The system comprises a sensor assembly, a light source, a fluidic pump and an electrical measurement. The sensor assembly comprising an FET chip configured with at least one fluidic channel. Wherein the fluidic channel has an inlet and an outlet, and the fluidic pump is connected to the inlet of the fluidic channel and operable to drive a fluid and/or a specimen of interest through the fluidic channel. Wherein the electrical measurement unit is connected to the sensor assembly to detect a change in the electrical characteristics of the FET chip.
    Type: Application
    Filed: December 6, 2021
    Publication date: June 9, 2022
    Applicants: ACADEMIA SINICA, SILICON-BASED MOLECULAR SENSORING TECHNOLOGY CO., LTD.
    Inventors: ChiiDong CHEN, Pradhana Jati Budhi LAKSANA, Chia-Jung CHU
  • Nanowire field effect transistor detection device and the detection method thereof
    Patent number: 10784343
    Abstract: The present invention discloses a Nanowire Field Effect Transistor Detection Device and the Detection Method thereof. The Nanowire Field Effect Transistor Detection Device of the present invention comprises: gate oxide, SiNW chip, surface oxide, and surface molecule layer. The circuit structure of the Nanowire Field Effect Transistor Detection Device comprises a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, an AC voltage source, and an ammeter. In addition, the present invention provides a method for attaching the probe Ni-NTA to the Nanowire Field Effect Transistor Detection Device. Furthermore, the present invention provides a method for attaching the isooctyl trimethoxysilane molecule to the Nanowire Field Effect Transistor Detection Device.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: September 22, 2020
    Assignee: ACADEMIA SINICA
    Inventors: Chii Dong Chen, Li Chu Tsai, Chia Jung Chu, Ying Pin Wu
  • Nanowire Field Effect Transistor Detection Device and the Detection Method thereof
    Publication number: 20190206990
    Abstract: The present invention discloses a Nanowire Field Effect Transistor Detection Device and the Detection Method thereof. The Nanowire Field Effect Transistor Detection Device of the present invention comprises: gate oxide, SiNW chip, surface oxide, and surface molecule layer. The circuit structure of the Nanowire Field Effect Transistor Detection Device comprises a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, an AC voltage source, and an ammeter. In addition, the present invention provides a method for attaching the probe Ni-NTA to the Nanowire Field Effect Transistor Detection Device. Furthermore, the present invention provides a method for attaching the isooctyl trimethoxysilane molecule to the Nanowire Field Effect Transistor Detection Device.
    Type: Application
    Filed: December 28, 2017
    Publication date: July 4, 2019
    Inventors: Chii Dong CHEN, Li Chu TSAI, Chia Jung CHU, Ying Pin WU