Abstract: A method for identifying an object, an optical sensing apparatus and a system are provided. A controller of the system drives multiple light sources of the optical sensing apparatus to emit the multiple light beams with different beam angles, controls a light sensor to sense the lights reflected by the object, and performs the method for identifying the object. In the method, the light sensor is used to sense a first light emitted by a first light source with a first beam angle reflected by the object, and sense an intensity of the reflected first light. The light sensor is also used to sense a second light emitted by a second light source with a second beam angle reflected by the object and sense another intensity of the reflected second light. Therefore, the object can be identified by integrating information of the intensities obtained by the light sensor.

Abstract: A stretchable pixel array substrate includes a base, pixel structures and a gate driving circuit electrically connected to the pixel structures. The base has an active area and a peripheral area outside the active area. The peripheral area has openings to define first islands, second islands and first bridges of the peripheral area. An area of each of the first islands is greater than an area of each of the second islands. At least a part of the first bridges is connected between the first islands and the second islands. The pixel structures are disposed on the active area of the base. The gate driving circuit includes first parts disposed on the first islands and second parts disposed on the second islands and electrically connected to the first parts.

Abstract: A method for identifying an object, an optical sensing apparatus and a system are provided. A controller of the system drives multiple light sources of the optical sensing apparatus to emit the multiple light beams with different beam angles, controls a light sensor to sense the lights reflected by the object, and performs the method for identifying the object. In the method, the light sensor is used to sense a first light emitted by a first light source with a first beam angle reflected by the object, and sense an intensity of the reflected first light. The light sensor is also used to sense a second light emitted by a second light source with a second beam angle reflected by the object and sense another intensity of the reflected second light. Therefore, the object can be identified by integrating information of the intensities obtained by the light sensor.

Abstract: A distance determining system comprising: a light source, configured to emit light; a first light sensing region, away from the light source for a first distance, comprising at least one first light sensing device; a second light sensing region, away from the light source for a second distance larger than the first distance, comprising at least one second light sensing device; and a processing circuit, configured to compute distance information of an object which reflects the light to the first light sensing region and the second light sensing region, according to a first relation between a first light intensity sensed by the first light sensing region and a second light intensity sensed by the second light sensing region.

Abstract: A method for identifying an object, an optical sensing apparatus and a system are provided. A controller of the system drives multiple light sources of the optical sensing apparatus to emit the multiple light beams with different beam angles, controls a light sensor to sense the lights reflected by the object, and performs the method for identifying the object. In the method, the light sensor is used to sense a first light emitted by a first light source with a first beam angle reflected by the object, and sense an intensity of the reflected first light. The light sensor is also used to sense a second light emitted by a second light source with a second beam angle reflected by the object and sense another intensity of the reflected second light. Therefore, the object can be identified by integrating information of the intensities obtained by the light sensor.

Abstract: A method for identifying an object, an optical sensing apparatus and a system are provided. A controller of the system drives multiple light sources of the optical sensing apparatus to emit the multiple light beams with different beam angles, controls a light sensor to sense the lights reflected by the object, and performs the method for identifying the object. In the method, the light sensor is used to sense a first light emitted by a first light source with a first beam angle reflected by the object, and sense an intensity of the reflected first light. The light sensor is also used to sense a second light emitted by a second light source with a second beam angle reflected by the object and sense another intensity of the reflected second light. Therefore, the object can be identified by integrating information of the intensities obtained by the light sensor.

Abstract: A touch display device includes a first substrate and a second substrate. The first substrate has a signal wire and a display unit which are electrically connected to each other. The second substrate has a conductive circuit and a touch unit which are disposed on one side of the second substrate facing the first substrate. The second substrate includes a touch area and a bending area, the touch unit is disposed in the touch area, and the touch area is stacked on the display unit, and the conductive circuit is disposed in the bending area and is electrically connected to the signal wire. The bending area extends from an edge of the first substrate and is bent to one side of the first substrate facing away from the second substrate.

Abstract: An active device substrate including a flexible substrate, an inorganic insulation layer, an organic insulation pattern, a conductive device and a peripheral wiring is provided. The flexible substrate has an active region, a peripheral region outside the active region and a bending region connected between the active region and the peripheral region. The inorganic insulation layer is disposed on the flexible substrate and has a groove disposed in the bending region. The organic insulation pattern is disposed in the groove of the inorganic insulation layer. The peripheral wiring is extended from the active region to the conductive device in the peripheral region. The peripheral wiring is disposed on the organic insulation pattern, and the organic insulation pattern is located between the peripheral wiring and the flexible substrate.

Abstract: A touch display device includes a first substrate and a second substrate. The first substrate has a signal wire and a display unit which are electrically connected to each other. The second substrate has a conductive circuit and a touch unit which are disposed on one side of the second substrate facing the first substrate. The second substrate includes a touch area and a bending area, the touch unit is disposed in the touch area, and the touch area is stacked on the display unit, and the conductive circuit is disposed in the bending area and is electrically connected to the signal wire. The bending area extends from an edge of the first substrate and is bent to one side of the first substrate facing away from the second substrate.

Abstract: An active device substrate including a flexible substrate, an inorganic insulation layer, an organic insulation pattern, a conductive device and a peripheral wiring is provided. The flexible substrate has an active region, a peripheral region outside the active region and a bending region connected between the active region and the peripheral region. The inorganic insulation layer is disposed on the flexible substrate and has a groove disposed in the bending region. The organic insulation pattern is disposed in the groove of the inorganic insulation layer. The peripheral wiring is extended from the active region to the conductive device in the peripheral region. The peripheral wiring is disposed on the organic insulation pattern, and the organic insulation pattern is located between the peripheral wiring and the flexible substrate.

Abstract: A flexible panel includes a substrate, a first insulating layer, a second insulating layer, a sacrificial layer, and a metal wiring layer. The substrate has an active area, a peripheral area, and an intermediate area. The first insulating layer is in the three areas of the substrate, and the first insulating layer in the intermediate area has a first pattern. The second insulating layer is on the first insulating layer. The second insulating layer in the intermediate area has a first opening extending along a first direction, so that the second insulating layer does not cover the first pattern of the first insulating layer. The sacrificial layer is between the first insulating layer and the second insulating layer in the intermediate area, and does not cover the first pattern of the first insulating layer. The metal wiring layer extends between the active area and the peripheral area.

Abstract: A flexible panel includes a substrate, a first insulating layer, a second insulating layer, a sacrificial layer, and a metal wiring layer. The substrate has an active area, a peripheral area, and an intermediate area. The first insulating layer is in the three areas of the substrate, and the first insulating layer in the intermediate area has a first pattern. The second insulating layer is on the first insulating layer. The second insulating layer in the intermediate area has a first opening extending along a first direction, so that the second insulating layer does not cover the first pattern of the first insulating layer. The sacrificial layer is between the first insulating layer and the second insulating layer in the intermediate area, and does not cover the first pattern of the first insulating layer. The metal wiring layer extends between the active area and the peripheral area.

Abstract: A method of fabricating a polycrystalline silicon thin film transistor device includes the following steps. A substrate is provided, and a buffer layer having dopants is formed on the substrate. An amorphous silicon layer is formed on the buffer layer having the dopants. A thermal process is performed to convert the amorphous silicon layer into a polycrystalline silicon layer by means of polycrystalization, and to simultaneously out-diffuse a portion of the dopants in the buffer layer into the polycrystalline silicon layer for adjusting a threshold voltage. The polycrystalline silicon layer is patterned to form an active layer. A gate insulating layer is formed on the active layer. A gate electrode is formed on the gate insulating layer. A source doped region and a drain doped region are formed in the active layer.

Abstract: A method of fabricating a polycrystalline silicon thin film transistor device includes the following steps. A substrate is provided, and a buffer layer having dopants is formed on the substrate. An amorphous silicon layer is formed on the buffer layer having the dopants. A thermal process is performed to convert the amorphous silicon layer into a polycrystalline silicon layer by means of polycrystalization, and to simultaneously out-diffuse a portion of the dopants in the buffer layer into the polycrystalline silicon layer for adjusting a threshold voltage. The polycrystalline silicon layer is patterned to form an active layer. A gate insulating layer is formed on the active layer. A gate electrode is formed on the gate insulating layer. A source doped region and a drain doped region are formed in the active layer.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract: A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a semiconductor layer is formed on the substrate. Then, a Si-rich dielectric layer is formed on the semiconductor layer. After that, a plurality of silicon nanocrystals is formed in the Si-rich dielectric layer by a laser annealing process to form a charge-storing dielectric layer. Last, a gate electrode is formed on the charge-storing dielectric layer.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract: A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a semiconductor layer is formed on the substrate. Then, a Si-rich dielectric layer is formed on the semiconductor layer. After that, a plurality of silicon nanocrystals is formed in the Si-rich dielectric layer by a laser annealing process to form a charge-storing dielectric layer. Last, a gate electrode is formed on the charge-storing dielectric layer.