Abstract: A whitelisting method for blocking script-based malware includes steps of: checking a command line of a process to confirm the process to launch a first interception point of a startup script file; checking whether the startup script file in a whitelist at the first interception point; determining that a test is passed when the startup script file exists in the whitelist, and launching the startup script file, wherein the startup script file at least includes a module script file; confirming the process to invoke a module loader to import and launch a second interception point of the module script file; checking whether the module loader is allowed to import the module script file, or is allowed to launch the module script file that has been imported by using the whitelist at the second interception point.

Abstract: Bridging testing method between adjacent semiconductor devices includes forming patterned diffusion region on semiconductor substrate, and forming first conductive layer over diffusion region. First conductive layer is patterned in same pattern as patterned diffusion region. Second conductive layer formed extending in first direction over first conductive layer. Second conductive layer is patterned to form opening extending in first direction in central region of second conductive layer exposing portion of first conductive layer. First conductive layer exposed portion is removed exposing portion of diffusion region. Source/drain region is formed over exposed portion of diffusion region, and dielectric layer is formed over source/drain region. Third conductive layer is formed over dielectric layer. End portions along first direction of second conductive layer removed to expose first and second end portions of first conductive layer.

Abstract: Bridging testing method between adjacent semiconductor devices includes forming patterned diffusion region on semiconductor substrate, and forming first conductive layer over diffusion region. First conductive layer is patterned in same pattern as patterned diffusion region. Second conductive layer formed extending in first direction over first conductive layer. Second conductive layer is patterned to form opening extending in first direction in central region of second conductive layer exposing portion of first conductive layer. First conductive layer exposed portion is removed exposing portion of diffusion region. Source/drain region is formed over exposed portion of diffusion region, and dielectric layer is formed over source/drain region. Third conductive layer is formed over dielectric layer. End portions along first direction of second conductive layer removed to expose first and second end portions of first conductive layer.

Abstract: Bridging testing method between adjacent semiconductor devices includes forming patterned diffusion region on semiconductor substrate, and forming first conductive layer over diffusion region. First conductive layer is patterned in same pattern as patterned diffusion region. Second conductive layer formed extending in first direction over first conductive layer. Second conductive layer is patterned to form opening extending in first direction in central region of second conductive layer exposing portion of first conductive layer. First conductive layer exposed portion is removed exposing portion of diffusion region. Source/drain region is formed over exposed portion of diffusion region, and dielectric layer is formed over source/drain region. Third conductive layer is formed over dielectric layer. End portions along first direction of second conductive layer removed to expose first and second end portions of first conductive layer.

Abstract: Bridging testing method between adjacent semiconductor devices includes forming patterned diffusion region on semiconductor substrate, and forming first conductive layer over diffusion region. First conductive layer is patterned in same pattern as patterned diffusion region. Second conductive layer formed extending in first direction over first conductive layer. Second conductive layer is patterned to form opening extending in first direction in central region of second conductive layer exposing portion of first conductive layer. First conductive layer exposed portion is removed exposing portion of diffusion region. Source/drain region is formed over exposed portion of diffusion region, and dielectric layer is formed over source/drain region. Third conductive layer is formed over dielectric layer. End portions along first direction of second conductive layer removed to expose first and second end portions of first conductive layer.

Abstract: Bridging testing method between adjacent semiconductor devices includes forming patterned diffusion region on semiconductor substrate, and forming first conductive layer over diffusion region. First conductive layer is patterned in same pattern as patterned diffusion region. Second conductive layer formed extending in first direction over first conductive layer. Second conductive layer is patterned to form opening extending in first direction in central region of second conductive layer exposing portion of first conductive layer. First conductive layer exposed portion is removed exposing portion of diffusion region. Source/drain region is formed over exposed portion of diffusion region, and dielectric layer is formed over source/drain region. Third conductive layer is formed over dielectric layer. End portions along first direction of second conductive layer removed to expose first and second end portions of first conductive layer.

Abstract: Bridging testing method between adjacent semiconductor devices includes forming patterned diffusion region on semiconductor substrate, and forming first conductive layer over diffusion region. First conductive layer is patterned in same pattern as patterned diffusion region. Second conductive layer formed extending in first direction over first conductive layer. Second conductive layer is patterned to form opening extending in first direction in central region of second conductive layer exposing portion of first conductive layer. First conductive layer exposed portion is removed exposing portion of diffusion region. Source/drain region is formed over exposed portion of diffusion region, and dielectric layer is formed over source/drain region. Third conductive layer is formed over dielectric layer. End portions along first direction of second conductive layer removed to expose first and second end portions of first conductive layer.

Abstract: A system structure of an electric vehicle supply equipment, an electric vehicle supply equipment, and a control apparatus adapted to the electric vehicle supply equipment are disclosed. The control apparatus adapted to the electric vehicle supply equipment comprises a network switch, a first switch, a first communication connector, a second switch, and a second communication connector. The first communication connector is electrically coupled with the first switch, the first switch and the second switch are electrically coupled with the network switch respectively, and the second communication connector is electrically coupled with the second switch. When the network switch is electrically disconnected with the first switch or the second switch, the first switch and the second switch are connected directly, the packet signal is transmitted via the first switch and the second switch.