Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a contact etch stop layer (CESL) adjacent to the metal gate, and an interlayer dielectric (ILD) layer around the gate structure, performing a first etching process to remove the ILD layer, performing a second etching process to remove the CESL for forming a first contact hole, and then forming a first contact plug in the first contact hole. Preferably, a width of the first contact plug adjacent to the CESL is less than a width of the first contact plug under the CESL.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: The present invention relates to a polarizer binding structure and its stereo display device. The polarizer binding structure includes a polarizer and an adhesive pattern layer having a plurality of gaps and the adhesive pattern layer deposed on a surface of the polarizer. The stereo display device of the polarizer binding structure includes a polarizer binding structure deposed between a first liquid crystal panel and a second liquid crystal panel. The polarizer binding structure has an adhesive pattern layer, which has a plurality of gaps and a polarizer deposed on a surface of the adhesive pattern layer, wherein the adhesive pattern layer is bound to the first liquid crystal panel and the polarizer is bound to a surface of the second liquid panel. Furthermore, a backlight module deposed toward the other surface of the second liquid panel. The present invention economizes the cost of the vacuum assembly process.

Abstract: The present invention relates to a touch panel structure with polarizer containing poly(ethylene terephthalate), which has a first polarizer and a second polarizer. Both contain poly(ethylene terephthalate) to replace triacetyl cellulose, so as to increase the quality of the polarizer and the touch panel. Furthermore, the first polarizer has an indium tin oxide layer or has a plurality of spacer dots deposed on the indium tin oxide layer.

Abstract: A method for manufacturing a liquid crystal display (LCD) panel, comprising providing a first substrate and a second substrate, dripping a plurality of liquid crystal (LC) drops on the first substrate and the second substrate, wherein the plurality of LC drops form a LC drop area having at least a void area, assembling the first substrate and the second substrate in a first environment, and placing the first substrate and the second substrate in a second environment having a greater atmospheric pressure than that of the first environment. Since the method is based on improvement of the dripped LC drop pattern, spacing uniformity occurring with the cell gap and thus displaying non-uniformity and deficiencies such as a vertical flow LC may be considerably reduced.