Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A block grouping method for a solid state drive includes the following steps. Firstly, plural blocks are classified into a high valid data count group and a low valid data count group according to valid data counts of respective blocks. An average erase count is set according to a specified number of blocks of the low valid data count group. A first block is selected from the high valid data count. A difference between the average erase count and a first erase count of the first block is calculated. If the difference exceeds a threshold value, a wear leveling operation is performed on the first block.

Abstract: A block grouping method includes the following steps. Firstly, a link list is established. In the link list, plural blocks are classified into plural groups according to valid data counts of respective blocks. If a host refreshes a stored data of a flash memory of the solid state drive or adds a new data into the flash memory, the valid data count of the block corresponding to the refreshed data or the new data is changed, and the link list is updated according to the changed valid data count of the block. After the garbage collection is started by the solid state drive, the block to be subject to the garbage collection is selected according to the link list, and the garbage collection is performed.

Abstract: A block grouping method for a solid state drive includes the following steps. Firstly, plural blocks are classified into a high valid data count group and a low valid data count group according to valid data counts of respective blocks. An average erase count is set according to a specified number of blocks of the low valid data count group. A first block is selected from the high valid data count. A difference between the average erase count and a first erase count of the first block is calculated. If the difference exceeds a threshold value, a wear leveling operation is performed on the first block.

Abstract: A block grouping method includes the following steps. Firstly, a link list is established. In the link list, plural blocks are classified into plural groups according to valid data counts of respective blocks. If a host refreshes a stored data of a flash memory of the solid state drive or adds a new data into the flash memory, the valid data count of the block corresponding to the refreshed data or the new data is changed, and the link list is updated according to the changed valid data count of the block. After the garbage collection is started by the solid state drive, the block to be subject to the garbage collection is selected according to the link list, and the garbage collection is performed.

Abstract: A garbage collection control method for a solid state drive includes the following steps. Firstly, when a garbage collection is started by the solid state drive, a type of a write command from a host is judged. If the write command is not a sequential write command, a first type garbage collection is performed for obtaining a released space smaller than one free block space from a flash memory, and the write command is executed to store a write data into the flash memory. If the write command is the sequential write command, a second type garbage collection is performed for obtaining a released space larger than one free block space from the flash memory, and the write command is executed to store the write data into the flash memory.