Patents by Inventor Chia-Lung Ma

Chia-Lung Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240020021
    Abstract: A data retry-read method, a memory storage device, and a memory control circuit element are provided. The method includes: detecting a notification signal from a volatile memory module; in response to the notification signal, instructing the volatile memory module to execute N command sequences in a buffer; and after the volatile memory module executes the N command sequences, sending at least one read command sequence, according to M physical addresses involved in the N command sequences, to instruct the volatile memory module to read first data from the M physical addresses.
    Type: Application
    Filed: August 11, 2022
    Publication date: January 18, 2024
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Ming-Hui Tseng, Chia-Lung Ma, Zhen-Yu Weng
  • Patent number: 10304521
    Abstract: A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. In addition, the memory interface circuit further generates an input signal according to a voltage correspondence between the first signal and an internal reference voltage.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: May 28, 2019
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Ming-Chien Huang, Chia-Lung Ma, Tzu-Chia Huang
  • Publication number: 20180233191
    Abstract: A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. In addition, the memory interface circuit further generates an input signal according to a voltage correspondence between the first signal and an internal reference voltage.
    Type: Application
    Filed: April 18, 2018
    Publication date: August 16, 2018
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Ming-Chien Huang, Chia-Lung Ma, Tzu-Chia Huang
  • Patent number: 9990983
    Abstract: A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. In addition, the memory interface circuit further generates an input signal according to a voltage correspondence between the first signal and an internal reference voltage.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: June 5, 2018
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Ming-Chien Huang, Chia-Lung Ma, Tzu-Chia Huang
  • Publication number: 20170365328
    Abstract: A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. In addition, the memory interface circuit further generates an input signal according to a voltage correspondence between the first signal and an internal reference voltage.
    Type: Application
    Filed: May 10, 2017
    Publication date: December 21, 2017
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Ming-Chien Huang, Chia-Lung Ma, Tzu-Chia Huang
  • Publication number: 20130272518
    Abstract: A speech encryption method for encrypting a digital speech signal includes the steps of generating an encryption key, deriving a plurality of voice feature data from the digital speech signal, determining a corresponding shift parameter according to the encryption key and converting the voice feature data derived therefrom into converted speech data based on the shift parameter, and determining corresponding dual-tone multi-frequency (DTMF) data according to the encryption key and interleaving the DTMF data with the converted speech data so as to obtain a scrambled speech signal.
    Type: Application
    Filed: December 13, 2012
    Publication date: October 17, 2013
    Applicant: BLUCRYPT TECHNOLOGIES INC.
    Inventors: Meng-Tse Wu, Chia-Lung Ma, Chin-Yuan Chen