Patents by Inventor Chia-Lung Tsai

Chia-Lung Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220202358
    Abstract: An electronic device and a method for detecting apnea are provided. The method includes: transmitting a wireless signal to a human subject, receiving an echo corresponding to the wireless signal, and obtaining channel state information (CSI) from the echo; generating a detection result according to the CSI; outputting the detection result. Here, the detection result indicates whether an apnea event has occurred on the human subject.
    Type: Application
    Filed: December 29, 2020
    Publication date: June 30, 2022
    Applicant: Industrial Technology Research Institute
    Inventors: Ting-Wu Ho, Feng-Jie Tsai, Chia-Lung Liu
  • Publication number: 20220199338
    Abstract: A key structure includes a membrane switch, a keycap and an elastic conduction element. The keycap is located over the membrane switch. The elastic conduction element is arranged between the keycap and the membrane switch. The elastic conduction element includes a supporting cover and a conduction post. The conduction post is connected with the supporting cover and disposed within an accommodation space of the supporting cover. The conduction post includes a first contacting part, a second contacting part and a concave part. While the keycap is moved downwardly relative to the membrane switch, the supporting cover is compressed by the keycap and the conduction post is correspondingly moved downwardly. Consequently, the first contacting part and the second contacting part are contacted with the membrane switch, and a suction force between the concave part and the membrane switch is generated.
    Type: Application
    Filed: February 2, 2021
    Publication date: June 23, 2022
    Inventors: Chia-Wei Chang, Chin-Sung Pan, Lei-Lung Tsai
  • Publication number: 20220176372
    Abstract: A cartridge for a bioreactor adapted for accommodating a plurality of objects includes a cartridge main body defining a plurality of spaced-apart accommodating slots for respectively accommodating the objects therein. The cartridge main body includes a retaining portion extending into at least one of the accommodating slots, and adapted to retain a corresponding one of the objects in a corresponding one of the accommodating slots. The retaining portion is pushable to move resiliently in the corresponding one of the accommodating slots.
    Type: Application
    Filed: March 31, 2021
    Publication date: June 9, 2022
    Applicant: GENEREACH BIOTECHNOLOGY CORPORATION
    Inventors: Wen-Shan YANG, Ching-Ko LIN, Chia-Lin HSU, Fu-Chun LI, Pin-Hsing CHOU, Yun-Lung TSAI, Pei-Yu LEE, Hsiao-Fen CHANG
  • Publication number: 20220127406
    Abstract: A water-based polyurethane resin and a method for manufacturing the same are provided. The method for manufacturing the water-based polyurethane includes: a preparation step of a prepolymer, a dilution step of the prepolymer, a water dispersion and chain extension step, and an acrylic synthesis step. The method further includes mixing polyol and polyisocyanate to obtain a prepolymer, and diluting the prepolymer by adding acrylic monomer in the prepolymer. In the water-based polyurethane resin, at least one of the polyhydric alcohol, polyisocyanate, and the acrylic monomer includes a compound with a cyclic structure.
    Type: Application
    Filed: July 19, 2021
    Publication date: April 28, 2022
    Inventors: TE-CHAO LIAO, SEN-HUANG HSU, CHIA-LUNG TSAI
  • Publication number: 20220056193
    Abstract: An organosilicon-modified polyurethane resin and a method for producing the same are provided. The organosilicon-modified polyurethane resin includes organosilicon ingredients obtained by chemically bonding a first organosilicon chain extender having a chemical structure of formula (I) and a second organosilicon chain extender having a chemical structure of formula (II) into a molecular structure of a polyurethane resin during a polymerization reaction: in which R11 is a substituent of —CH2CH2— or —CH2CH(CH3)—, n1 is a positive integer between 0 and 50, m1 is a positive integer between 0 and 50, and x1 is a positive integer between 4 and 100; in which R21 is a substituent of —CH3 or —CH2CH3, R22 is a substituent of —CH2CH2CH2—, and R23 is a substituent of —CH2CH2— or —CH2CH(CH3)—, n2 is a positive integer between 6 and 130, and m2 is a positive integer between 4 and 50.
    Type: Application
    Filed: June 3, 2021
    Publication date: February 24, 2022
    Inventors: TE-CHAO LIAO, SEN-HUANG HSU, CHIA-LUNG TSAI
  • Patent number: 11254780
    Abstract: A method for preparing an aqueous polyurethane dispersion includes the following steps. The method characterized in that it introduces an ethoxy group to sodium ethylenediamine sulfonate (H2N—CH2CH2NHCH2CH2SO3Na) serving as an anionic chain extender to form sodium ethylenediamino ethoxyethyl sulfonate (H2NCH2CH2NHCH2CH2OCH2CH2SO3Na). Next, hydrophilic groups of sodium ethylenediamino ethoxyethyl sulfonate are used to prepare an aqueous polyurethane to improve the flowability of the resin, in which the polyurethane prepolymer has an isocyanate group at its end. More than one acrylate monomer is used for dilution and reduction of viscosity, and hydrophilic and amine groups containing sulfonate is used for water dispersion and to carry out a chain extension reaction. After that, an initiator is added for acrylic polymerization, so as to modify polyurethane with graft acrylic.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: February 22, 2022
    Assignee: NAN YA PLASTICS CORPORATION
    Inventors: Te-Chao Liao, Sen-Huang Hsu, Chia-Lung Tsai
  • Patent number: 11233173
    Abstract: An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: January 25, 2022
    Assignees: Industrial Technology Research Institute, OPTO TECH CORP.
    Inventors: Chia-Lung Tsai, Hsueh-Hsing Liu, Chang Da Tsai
  • Patent number: 10957814
    Abstract: An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: March 23, 2021
    Assignee: Industrial Technology Research Institute
    Inventors: Chia-Lung Tsai, Hsueh-Hsing Liu
  • Publication number: 20210005780
    Abstract: An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.
    Type: Application
    Filed: August 31, 2020
    Publication date: January 7, 2021
    Applicants: Industrial Technology Research Institute, OPTO TECH CORP.
    Inventors: Chia-Lung Tsai, Hsueh-Hsing Liu, Chang Da Tsai
  • Publication number: 20200325266
    Abstract: A method for preparing an aqueous polyurethane dispersion includes the following steps. The method characterized in that it introduces an ethoxy group to sodium ethylenediamine sulfonate (H2N—CH2CH2NHCH2CH2SO3Na) serving as an anionic chain extender to form sodium ethylenediamino ethoxyethyl sulfonate (H2NCH2CH2NHCH2CH2OCH2CH2SO3Na). Next, hydrophilic groups of sodium ethylenediamino ethoxyethyl sulfonate are used to prepare an aqueous polyurethane to improve the flowability of the resin, in which the polyurethane prepolymer has an isocyanate group at its end. More than one acrylate monomer is used for dilution and reduction of viscosity, and hydrophilic and amine groups containing sulfonate is used for water dispersion and to carry out a chain extension reaction. After that, an initiator is added for acrylic polymerization, so as to modify polyurethane with graft acrylic.
    Type: Application
    Filed: September 19, 2019
    Publication date: October 15, 2020
    Inventors: TE-CHAO LIAO, SEN-HUANG HSU, CHIA-LUNG TSAI
  • Publication number: 20200194618
    Abstract: An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.
    Type: Application
    Filed: June 5, 2019
    Publication date: June 18, 2020
    Applicant: Industrial Technology Research Institute
    Inventors: Chia-Lung Tsai, Hsueh-Hsing Liu
  • Patent number: 10676562
    Abstract: A process for preparing solvent-free aqueous polyurethane dispersion modified with acrylic grafting is divided into four steps. The first step is a reaction of a diisocyanate with a polyol to prepare a prepolymer; the second step involves diluting the prepolymer with an acrylate monomer and adding a sulfonate-based chain extender to react; the third step involves adding deionized water and a water-soluble diamine-based chain extender to obtain a solvent-free sulfonate-based aqueous polyurethane dispersion; and the fourth step involves letting the aqueous polyurethane become modified with acrylic grafting. The resulting aqueous polyurethane has excellent mechanical strength, heat resistance and water resistance.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: June 9, 2020
    Assignee: NAN YA PLASTICS CORPORATION
    Inventors: Te-Chao Liao, Sen-Huang Hsu, Chia-Lung Tsai
  • Patent number: 9724385
    Abstract: The present invention is directed toward pharmaceutical compositions comprising an isolated polypeptide and a pharmaceutically acceptable carrier. The present invention also discloses an antibody or an antigen-binding portion thereof that bind to the isolated polypeptide. Methods of inhibiting cancer cells growth are also disclosed, comprising administering the isolated polypeptide or the antibody described herein to a subject in need thereof.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: August 8, 2017
    Assignee: Chang Gung Memorial Hospital, Linkou Branch
    Inventors: Tzu-Hao Wang, Chia-Lung Tsai, Angel Chao
  • Publication number: 20170107319
    Abstract: A process for preparing aqueous polyurethane solvent-free uses an acrylate monomer instead of acetone to dilute a prepared polyurethane prepolymer, not only the monomer can be added without cooling, but also the prepolymer has good dispersal and is favorable to subsequent dispersion in water while preventing coagulation and acetone residual; additionally, the invented process let the aqueous polyurethane become modified by acrylic grafting may improve the aqueous polyurethane being excellent in terms of mechanical strength, heat resistance and water resistance.
    Type: Application
    Filed: October 12, 2016
    Publication date: April 20, 2017
    Inventors: Te-Chao LIAO, Sen-Huang HSU, Chia-Lung TSAI
  • Publication number: 20170104074
    Abstract: In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.
    Type: Application
    Filed: November 25, 2015
    Publication date: April 13, 2017
    Inventors: Wei-Hung Kuo, Suh-Fang Lin, Kun-Fong Lin, Chia-Lung Tsai
  • Publication number: 20160172536
    Abstract: A semiconductor light-emitting structure including a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a magnetic layer is provided. The light-emitting layer is disposed between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The first electrode is electrically connected to the first-type doped semiconductor layer, and the second electrode is electrically connected to the second-type doped semiconductor layer. The magnetic layer connects the first electrode and the first-type doped semiconductor layer. At least a portion of the magnetic layer is magnetic, and the bandgap of at least another portion of the magnetic layer is greater than 0 eV and is less than or equal to 5 eV. The material of the magnetic layer includes metal, metal oxide, or a combination thereof.
    Type: Application
    Filed: December 29, 2014
    Publication date: June 16, 2016
    Inventors: Chia-Lung Tsai, Yen-Hsiang Fang, Pao-Chu Tzeng
  • Publication number: 20160008426
    Abstract: The present invention is directed toward pharmaceutical compositions comprising an isolated polypeptide and a pharmaceutically acceptable carrier. The present invention also discloses an antibody or an antigen-binding portion thereof that bind to the isolated polypeptide.
    Type: Application
    Filed: July 30, 2015
    Publication date: January 14, 2016
    Inventors: Tzu-Hao Wang, Chia-Lung Tsai, Angel Chao
  • Patent number: 9145449
    Abstract: The present invention is directed toward pharmaceutical compositions comprising an isolated polypeptide and a pharmaceutically acceptable carrier. The present invention also discloses an antibody or an antigen-binding portion thereof that bind to the isolated polypeptide. Methods of inhibiting cancer cells growth are also disclosed, comprising administering the isolated polypeptide or the antibody described herein to a subject in need thereof.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: September 29, 2015
    Assignee: CHANG GUNG MEMORIAL HOSPITAL, LINKOU BRANCH
    Inventors: Tzu-Hao Wang, Chia-Lung Tsai, Angel Chao
  • Patent number: 9130122
    Abstract: A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E18/cm3 to 1E20/cm3 at an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.
    Type: Grant
    Filed: February 17, 2014
    Date of Patent: September 8, 2015
    Assignees: Industrial Technology Research Institute, WALSIN LIHWA Corp
    Inventors: Yi-Keng Fu, Chia-Lung Tsai, Hung-Tse Chen, Chih-Hsuen Chou
  • Publication number: 20150179880
    Abstract: A nitride light emitting diode structure including a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, a first metal pad, a second metal pad and a magnetic film is disclosed. The magnetic film disposed between the first metal pad and the first type doped semiconductor layer includes a zinc oxide (ZnO) layer doped with cobalt (Co). The content of Co in the ZnO layer ranges from 5% to 25% by molar ratio.
    Type: Application
    Filed: December 24, 2013
    Publication date: June 25, 2015
    Applicant: Industrial Technology Research Institute
    Inventors: Yen-Hsiang Fang, Rong Xuan, Chia-Lung Tsai, Yu-Hsiang Chang