Abstract: A communication device includes a wireless transceiver circuit and a processor. The wireless transceiver circuit transmits and receives wireless signals. The processor processes the wireless signals to obtain information regarding a first period configured by a serving network device in order to measure signal strength of the serving network device and obtain information regarding a second period configured by the serving network device in order to detect a neighbor network device. The processor further determines whether an event related to low communication delay is triggered. When determining that the event related to low communication delay is not triggered, the processor performs a detection operation to detect the neighbor network device according to the second period. When determining that the event related to the low communication delay is triggered, the processor performs the detection operation to detect the neighbor network device according to a third period shorter than the second period.

Abstract: A detecting system for an unauthorized device having a movable locator is disclosed. The movable locator includes a location positioning unit, a signal sniffing unit, a signal collecting unit, and a device positioning unit. The location positioning unit detects a locator position of the movable locator. The signal sniffing unit detects Wi-Fi signal of an unauthorized device and generates a sensing report message. The signal collecting unit adds multiple sensing report messages to a sensing report record collection. The device positioning unit organizes multiple positioning combinations based on the content of the sensing report record collection, generates multiple positioning results respectively based on the multiple positioning combinations, and performs a weighting process to the multiple positioning results to generate a final positioning result of the unauthorized device.

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.

Abstract: A playback circuit including a digital-to-analog converter (DAC), an amplifying output circuit and a control circuit coupled to both is provided. The DAC is configured to convert an input playback audio signal into an input analog playback audio signal according to a first control signal for controlling an upper limit of power consumption of the DAC. The amplifying output circuit is coupled to the DAC and configured to generate an output playback audio signal according to the input analog playback audio signal and a second control signal for controlling an upper limit of power consumption of the amplifying output circuit. The control circuit is configured to generate the first control signal and second control signal according to a volume value of the input playback audio signal, thereby controlling the upper limit of power consumption of the DAC and the upper limit of power consumption of the amplifying output circuit.

Abstract: A semiconductor component including a semiconductor layer, a barrier layer, a leakage current suppression layer, an ohmic contact layer and an electrode layer is provided. The semiconductor layer has a protrusion and a top surface, adjacent to the protrusion. The protrusion includes a top surface and a side surface. The barrier layer is disposed on the top surface of the protrusion. The leakage current suppression layer is disposed on the top surface of the semiconductor layer. The ohmic contact layer is disposed on the leakage current suppression layer, and contacts the side surface of the protrusion and a side surface of the barrier layer. The ohmic contact layer does not contact the top surface of the semiconductor layer. The electrode layer is disposed on the ohmic contact layer.

Abstract: A water-based polyurethane resin and a method for manufacturing the same are provided. The method for manufacturing the water-based polyurethane includes: a preparation step of a prepolymer, a dilution step of the prepolymer, a water dispersion and chain extension step, and an acrylic synthesis step. The method further includes mixing polyol and polyisocyanate to obtain a prepolymer, and diluting the prepolymer by adding acrylic monomer in the prepolymer. In the water-based polyurethane resin, at least one of the polyhydric alcohol, polyisocyanate, and the acrylic monomer includes a compound with a cyclic structure.

Abstract: Provided is a semiconductor substrate with a balance stress. The semiconductor substrate includes a ceramics base, a nucleation layer and a first buffer layer doped with a first dopant. The ceramics base has an off-cut angle other than 0 degree. The nucleation layer is disposed on the ceramics base. The first buffer layer is disposed on the nucleation layer. The first dopant includes C, Fe or a combination thereof. The first buffer layer provides compressive stress to the ceramic base. The concentration of the first dopant in the first buffer layer is increased away from the ceramics base. The curvature of the semiconductor substrate is between 16 km?1 and ?16 km?1.

Abstract: An antibacterial modified polyurethane resin is provided. The antibacterial modified polyurethane resin includes a polyurethane resin and an antibacterial modifying agent grafted on the polyurethane resin. The antibacterial modifying agent has formula (I) as follows: R1 is a substituent of —(CH2)a—, R2 is a substituent of —(CH2)bCH3—, a is a positive integer that is greater than or equal to 3, and b is a positive integer that is greater than or equal to 12. The antibacterial modifying agent has three methoxyl groups, at least two of the three methoxyl groups bond to the polyurethane resin through covalent bonds. In the antibacterial modified polyurethane resin, a chloride ion of the antibacterial modifying agent is configured to be ionized, so that a nitrogen atom is configured to be positively charged to attract a bacteria in an environment.

Abstract: A water-based polyurethane resin and a method for manufacturing the same are provided. The method for manufacturing the water-based polyurethane includes: a preparation step of a prepolymer, a dilution step of the prepolymer, a water dispersion and chain extension step, and an acrylic synthesis step. The method further includes mixing polyol and polyisocyanate to obtain a prepolymer, and diluting the prepolymer by adding acrylic monomer in the prepolymer. In the water-based polyurethane resin, at least one of the polyhydric alcohol, polyisocyanate, and the acrylic monomer includes a compound with a cyclic structure.

Abstract: An organosilicon-modified polyurethane resin and a method for producing the same are provided. The organosilicon-modified polyurethane resin includes organosilicon ingredients obtained by chemically bonding a first organosilicon chain extender having a chemical structure of formula (I) and a second organosilicon chain extender having a chemical structure of formula (II) into a molecular structure of a polyurethane resin during a polymerization reaction: in which R11 is a substituent of —CH2CH2— or —CH2CH(CH3)—, n1 is a positive integer between 0 and 50, m1 is a positive integer between 0 and 50, and x1 is a positive integer between 4 and 100; in which R21 is a substituent of —CH3 or —CH2CH3, R22 is a substituent of —CH2CH2CH2—, and R23 is a substituent of —CH2CH2— or —CH2CH(CH3)—, n2 is a positive integer between 6 and 130, and m2 is a positive integer between 4 and 50.

Abstract: A method for preparing an aqueous polyurethane dispersion includes the following steps. The method characterized in that it introduces an ethoxy group to sodium ethylenediamine sulfonate (H2N—CH2CH2NHCH2CH2SO3Na) serving as an anionic chain extender to form sodium ethylenediamino ethoxyethyl sulfonate (H2NCH2CH2NHCH2CH2OCH2CH2SO3Na). Next, hydrophilic groups of sodium ethylenediamino ethoxyethyl sulfonate are used to prepare an aqueous polyurethane to improve the flowability of the resin, in which the polyurethane prepolymer has an isocyanate group at its end. More than one acrylate monomer is used for dilution and reduction of viscosity, and hydrophilic and amine groups containing sulfonate is used for water dispersion and to carry out a chain extension reaction. After that, an initiator is added for acrylic polymerization, so as to modify polyurethane with graft acrylic.

Abstract: An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.

Abstract: An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.

Abstract: An ultraviolet C light-emitting diode including an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a two-dimensional hole gas (2DHG) inducing layer, and an electron blocking layer is provided. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein a wavelength of a maximum peak of a spectrum emitted by the active layer ranges from 230 nm to 280 nm. The two-dimensional hole gas (2DHG) inducing layer is disposed between the active layer and the p-type semiconductor layer. A concentration of magnesium in the 2DHG inducing layer is less than 1017 atoms/cm3. The electron blocking layer is disposed between the p-type semiconductor layer and the 2DHG inducing layer. A concentration of magnesium in a part of the electron blocking layer adjacent to the 2DHG inducing layer is greater than 1019 atoms/cm3.

Abstract: A method for preparing an aqueous polyurethane dispersion includes the following steps. The method characterized in that it introduces an ethoxy group to sodium ethylenediamine sulfonate (H2N—CH2CH2NHCH2CH2SO3Na) serving as an anionic chain extender to form sodium ethylenediamino ethoxyethyl sulfonate (H2NCH2CH2NHCH2CH2OCH2CH2SO3Na). Next, hydrophilic groups of sodium ethylenediamino ethoxyethyl sulfonate are used to prepare an aqueous polyurethane to improve the flowability of the resin, in which the polyurethane prepolymer has an isocyanate group at its end. More than one acrylate monomer is used for dilution and reduction of viscosity, and hydrophilic and amine groups containing sulfonate is used for water dispersion and to carry out a chain extension reaction. After that, an initiator is added for acrylic polymerization, so as to modify polyurethane with graft acrylic.

Abstract: An ultraviolet C light-emitting diode includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electron blocking layer, and a second electron blocking layer. The active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of the maximum peak of the spectrum emitted by the active layer ranges from 230 nanometers to 280 nanometers. The concentration of magnesium in the active layer is less than 1017 atoms/cm3. The first electron blocking layer and the second electron blocking layer are disposed between the p-type semiconductor layer and the active layer. The concentration of magnesium in the second electron blocking layer is greater than that of the first electron blocking layer and is greater than 1018 atoms/cm3.

Abstract: A process for preparing solvent-free aqueous polyurethane dispersion modified with acrylic grafting is divided into four steps. The first step is a reaction of a diisocyanate with a polyol to prepare a prepolymer; the second step involves diluting the prepolymer with an acrylate monomer and adding a sulfonate-based chain extender to react; the third step involves adding deionized water and a water-soluble diamine-based chain extender to obtain a solvent-free sulfonate-based aqueous polyurethane dispersion; and the fourth step involves letting the aqueous polyurethane become modified with acrylic grafting. The resulting aqueous polyurethane has excellent mechanical strength, heat resistance and water resistance.

Abstract: The present invention is directed toward pharmaceutical compositions comprising an isolated polypeptide and a pharmaceutically acceptable carrier. The present invention also discloses an antibody or an antigen-binding portion thereof that bind to the isolated polypeptide. Methods of inhibiting cancer cells growth are also disclosed, comprising administering the isolated polypeptide or the antibody described herein to a subject in need thereof.

Abstract: A process for preparing aqueous polyurethane solvent-free uses an acrylate monomer instead of acetone to dilute a prepared polyurethane prepolymer, not only the monomer can be added without cooling, but also the prepolymer has good dispersal and is favorable to subsequent dispersion in water while preventing coagulation and acetone residual; additionally, the invented process let the aqueous polyurethane become modified by acrylic grafting may improve the aqueous polyurethane being excellent in terms of mechanical strength, heat resistance and water resistance.

Abstract: In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.