Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: A communication receiver includes a first signal processing circuit and a second signal processing circuit. The first signal processing circuit includes a first feedforward equalizer and a decision circuit. The first feedforward equalizer processes a received signal to generate a first equalized signal. The decision circuit performs hard decision upon the first equalized signal to generate a first symbol decision signal. The second signal processing circuit includes a second feedforward equalizer, a decision feedforward equalizer, and a first decision feedback equalizer. The second feedforward equalizer processes the first equalized signal to generate a second equalized signal. The decision feedforward equalizer processes the first symbol decision signal to generate a third equalized signal. The first decision feedback equalizer generates a second symbol decision signal according to the second equalized signal and the third equalized signal.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: The present disclosure provides a matte-type electromagnetic interference shielding film including bio-based components, which includes a bio-based insulating layer, a bio-based adhesive layer, a metal layer, and a bio-based electrically conductive adhesive layer. The matte-type electromagnetic interference shielding film including the bio-based component of the present disclosure has a matte appearance and high bio-based content and has the advantages of good surface insulation, high surface hardness, good chemical resistance, high shielding performance, good adhesion strength, low transmission loss, high transmission quality, good operability, high heat resistance, and the inner electrically conductive adhesive layer with long shelf life and storage life. The present disclosure further provides a preparation method thereof.

Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A projection device and a household appliance are provided. The projection device includes a casing, a lens component, and a pattern lighting module. An opening is disposed at a front end of the casing. The lens component is disposed inside an accommodating space of the casing and fixed on the casing, and the lens component corresponds to the opening. The pattern lighting module is disposed inside the accommodating space of the casing and fixed on the casing, and the pattern lighting module corresponds to the lens component. The pattern lighting module emits at least one patterned light beam that passes through the lens component and the opening sequentially.

Abstract: Matrix-assisted methods and compositions, including those based on solutions containing low melting agarose, to prepare intact organs and other samples for super resolution imaging by microscopy, and more particularly, lightsheet microscopy.

Abstract: A projection device and a household appliance are provided. The projection device includes a casing, a lens component, and a pattern lighting module. An opening is disposed at a front end of the casing. The lens component is disposed inside an accommodating space of the casing and fixed on the casing, and the lens component corresponds to the opening. The pattern lighting module is disposed inside the accommodating space of the casing and fixed on the casing, and the pattern lighting module corresponds to the lens component. The pattern lighting module emits at least one patterned light beam that passes through the lens component and the opening sequentially.

Abstract: A head up display system for a vehicle is provided, including an eye tracking device and a head up display device. The eye tracking device is configured to pre-locate an initial gaze position of a driver of the vehicle before the vehicle starts moving and to detect a gaze position of the driver in real time. The head up display device includes a projector and a processor. The processor is coupled to the eye tracking device and the projector. The processor compares the gaze position with the initial gaze position, and controls the projector to project a display image to a first projection position or a second projection position according to a comparison result, wherein the first projection position corresponds to the initial gaze position and the second projection position corresponds to the gaze position. A control method of a head up display system is also provided.

Abstract: A head up display system for a vehicle is provided, including an eye tracking device and a head up display device. The eye tracking device is configured to pre-locate an initial gaze position of a driver of the vehicle before the vehicle starts moving and to detect a gaze position of the driver in real time. The head up display device includes a projector and a processor. The processor is coupled to the eye tracking device and the projector. The processor compares the gaze position with the initial gaze position, and controls the projector to project a display image to a first projection position or a second projection position according to a comparison result, wherein the first projection position corresponds to the initial gaze position and the second projection position corresponds to the gaze position. A control method of a head up display system is also provided.

Abstract: A method is provided for cleaning a semiconductor structure. The method includes performing a rinse process of CO2 with water (CO2W) process over the semiconductor structure; and performing a standard clean (SC) process over the semiconductor structure with an overlapping period with the step of performing the rinse process of CO2W.

Abstract: A substrate cleaning method is provided. A substrate is provided, followed by performing a first pre-cleaning process with a first rotation speed and a first duration time. After the first pre-cleaning process, a second pre-cleaning process is performed with a second rotation speed and a second duration time, wherein the second rotation speed is greater than the first rotation speed. After the second pre-cleaning process, a cleaning process is performed by using a chemical agent with a cleaning rotation speed.

Abstract: A pressing apparatus is adapted for pressing a plurality of heat sinks on a circuit board, and includes a frame body and a plurality of pressing tools. The frame body includes a platform configured for placement of the circuit board thereon, and a mounting frame disposed above and spaced apart from the platform. The pressing tools are disposed at respective positions on the mounting frame. Each of the pressing tools includes an axle component, a universal joint unit disposed at a bottom end of the axle component, and a pressing head connected to the universal joint unit. The axle component extends downwardly between the platform and the mounting frame, and is configured to be resiliently and vertically movable. The pressing head is adapted for contacting one of the heat sinks, and is rotatable about the axle component by virtue of the universal joint unit.

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract: A pressing apparatus is adapted for pressing a plurality of heat sinks on a circuit board, and includes a frame body and a plurality of pressing tools. The frame body includes a platform configured for placement of the circuit board thereon, and a mounting frame disposed above and spaced apart from the platform. The pressing tools are disposed at respective positions on the mounting frame. Each of the pressing tools includes an axle component, a universal joint unit disposed at a bottom end of the axle component, and a pressing head connected to the universal joint unit. The axle component extends downwardly between the platform and the mounting frame, and is configured to be resiliently and vertically movable. The pressing head is adapted for contacting one of the heat sinks, and is rotatable about the axle component by virtue of the universal joint unit.

Abstract: The present invention discloses a surface roughening method for an LED substrate, which uses a grinding technology and an abrasive paper of from No. 300 to No. 6000 to grind the surface of a substrate to form a plurality of irregular concave zones and convex zones on the surface of the substrate. Next, a semiconductor light emitting structure is formed on the surface of the substrate. The concave zones and convex zones can scatter and diffract the light inside LED, reduce the horizontally-propagating light between the substrate and the semiconductor layer, decrease the probability of total reflection and promote LED light extraction efficiency.

Abstract: A group III-nitride semiconductor Schottky diode comprises a conducting substrate having a first surface, a stack of multiple layers including a buffer layer and a semiconductor layer sequentially formed on the first surface, wherein the semiconductor layer comprises a group III nitride compound, a first electrode on the semiconductor layer, and a second electrode formed in contact with the first surface at a position adjacent to the stack of multiple layers. In other embodiments, the application also describes a method of fabricating the group III-nitride semiconductor Schottky diode.