Abstract: A semiconductor device includes a gate structure disposed over a channel region and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, one or more work function adjustment material layers over the gate dielectric layer, and a metal gate electrode layer over the one or more work function adjustment material layers. The one or more work function adjustment layers includes an aluminum containing layer, and a diffusion barrier layer is disposed at at least one of a bottom portion and a top portion of the aluminum containing layer. The diffusion barrier layer is one or more of a Ti-rich layer, a Ti-doped layer, a Ta-rich layer, a Ta-doped layer and a Si-doped layer.

Abstract: An automatic robotic arm system and a coordinating method for robotic arm and computer vision thereof are disclosed. A beam-splitting mirror splits an incident light into a visible light and a ranging light and respectively guides to an image capturing device and an optical ranging device arranged in the different reference axes. In a calibration mode, a transformation relation is computed based on a plurality of the calibration postures and corresponding calibration images. In an operation mode, a mechanical space coordinate is determined based on an operation image and the transformation relation, and the robotic arm is controlled to move based on the mechanical space coordinate.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A method for wireless communication performed by a user equipment (UE) is provided. The UE includes a plurality of antenna panels. The method includes transmitting, to a Base Station (BS), a UE capability message that includes a number of the plurality of antenna panels; and transmitting, to the BS, a panel report that includes information of the plurality of antenna panels, the information associated with at least one of a Synchronization Signal Block (SSB) and a Channel State Information Reference Signal (CSI-RS).

Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: A semiconductor structure includes a substrate, a channel region, a gate structure, and source/drain regions. The channel region is over the substrate. The gate structure is over the channel region, and includes a high-k dielectric layer, a tungsten layer over the high-k dielectric layer, and a fluorine-containing work function layer over the tungsten layer. The source/drain regions are at opposite sides of the channel region.

Abstract: A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted into the etch stop layer. A capping layer and a device layer are formed on the etch stop layer. A handle substrate is bonded to the device layer. The sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms are removed from the handle substrate.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a gate structure sandwiched between and in contact with a first spacer feature and a second spacer feature, a top surface of the first spacer feature and a top surface of the second spacer feature extending above a top surface of the gate structure, a gate self-aligned contact (SAC) dielectric feature over the first spacer feature and the second spacer feature, a contact etch stop layer (CESL) over the gate SAC dielectric feature, a dielectric layer over the CESL, a gate contact feature extending through the dielectric layer, the CESL, the gate SAC dielectric feature, and between the first spacer feature and the second spacer feature to be in contact with the gate structure, and a liner disposed between the first spacer feature and the gate contact feature.

Abstract: A fuel tank cap includes a casing; a main chamber disposed in the casing; a vapor vent channel disposed in the casing and communicating with the main chamber; annular partition walls disposed in the main chamber and configured to divide the main chamber into troughs surrounding a central tunnel, each partition wall including a cut so that the troughs and the tunnel are capable of communicating with each other via the cut; activated carbon filled in the troughs; and a permeable plug disposed in the tunnel, which is made by wrapping rust-resistant flexible wires so that a plurality of intercommunicated air gaps are formed among the flexible wires. The vapor vent channel includes the cuts, the troughs and the air gaps. The activated carbon captures fuel vapors and absorbs VOCs in the fuel vapors when the fuel vapors pass through the vapor vent channel.

Abstract: A fuel tank cap includes a casing; a main chamber disposed in the casing; a vapor vent channel disposed in the casing and communicating with the main chamber; annular partition walls disposed in the main chamber and configured to divide the main chamber into troughs surrounding a central tunnel, each partition wall including a cut so that the troughs and the tunnel are capable of communicating with each other via the cut; activated carbon filled in the troughs; and a permeable plug disposed in the tunnel, which is made by wrapping rust-resistant flexible wires so that a plurality of intercommunicated air gaps are formed among the flexible wires. The vapor vent channel includes the cuts, the troughs and the air gaps. The activated carbon captures fuel vapors and absorbs VOCs in the fuel vapors when the fuel vapors pass through the vapor vent channel.

Abstract: A fuel tank cap includes a casing; a main chamber disposed in the casing; a vapor vent channel disposed in the casing and communicating with the main chamber; annular partition walls disposed in the main chamber and configured to divide the main chamber into troughs, each partition wall including a cut so that the troughs are capable of communicating with each other via the cut; and activated carbon filled in the troughs. The vapor vent channel includes the cuts and the troughs. The activated carbon captures fuel vapors and absorbs VOCs in the fuel vapors when the fuel vapors pass through the vapor vent channel. The invention eliminates the low efficiency problem of capturing the harmful VOCs of the fuel vapors by the conventional activated carbon canister.

Abstract: A fuel tank cap includes a casing; a main chamber disposed in the casing; a vapor vent channel disposed in the casing and communicating with the main chamber; annular partition walls disposed in the main chamber and configured to divide the main chamber into troughs, each partition wall including a cut so that the troughs are capable of communicating with each other via the cut; and activated carbon filled in the troughs. The vapor vent channel includes the cuts and the troughs. The activated carbon captures fuel vapors and absorbs VOCs in the fuel vapors when the fuel vapors pass through the vapor vent channel. The invention eliminates the low efficiency problem of capturing the harmful VOCs of the fuel vapors by the conventional activated carbon canister.

Abstract: An ergonomic photographic device includes a camera and a shell. The shell has a front portion and a back portion, with the camera being disposed in the front portion. The back portion has a leaning portion which is capable of accommodating leaning of the palm of a user. When the arm and wrist of the user are kept at a neutral angle, the camera is kept at a horizontal angle.

Abstract: An ergonomic photographic device includes a camera and a shell. The shell has a front portion and a back portion, with the camera being disposed in the front portion. The back portion has a leaning portion which is capable of accommodating leaning of the palm of a user. When the arm and wrist of the user are kept at a neutral angle, the camera is kept at a horizontal angle.