Patents by Inventor Chia-Pin Linus Lin

Chia-Pin Linus Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a FinFET, and FinFET formed by the method
    Patent number: 10515856
    Abstract: A method includes forming first and second fins of a finFET extending above a semiconductor substrate, with a shallow trench isolation (STI) region in between, and a distance between a top surface of the STI region and top surfaces of the first and second fins. First and second fin extensions are provided on top and side surfaces of the first and second fins above the top surface of the STI region. Material is removed from the STI region, to increase the distance between the top surface of the STI region and top surfaces of the first and second fins. A conformal stressor dielectric material is deposited over the fins and STI region. The conformal dielectric stressor material is reflowed, to flow into a space between the first and second fins above a top surface of the STI region, to apply stress to a channel of the finFET.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: December 24, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Pin Linus Lin, Chien-Tai Chan, Hsien-Chin Lin, Shyue-Shyh Lin