Abstract: A method of forming an image sensor includes forming a photodiode within a semiconductor substrate. The method further includes disposing an interconnect structure over the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL) over the photodiode; and a plurality of dielectric layers over the CESL, wherein at least one dielectric layer of the plurality of dielectric layers comprises a low dielectric constant (low-k) material. The method further includes patterning at least the plurality of dielectric layers, wherein patterning at least the plurality of dielectric layers comprises defining an opening above an active region of the photodiode. The method further includes depositing a cap layer on sidewalls of the opening, wherein the cap layer includes a dielectric material having a higher moisture resistance than the low-k dielectric material.

Abstract: An electronic device is provided. The electronic device includes a first substrate, a multilayer structure, and a passivation layer. The multilayer structure is disposed on the first substrate. The multilayer structure includes a first conductive layer and a second conductive layer disposed on the first conductive layer. The passivation layer is disposed on the second conductive layer. In addition, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the passivation layer.

Abstract: A modulation device includes a substrate, a metal layer, at least one driving element, and a modulation unit. The metal layer is disposed on the substrate and has at least one hole. The at least one driving element is disposed on the substrate and overlapped with the at least one hole. The modulation unit is electrically connected to the at least one driving element.

Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a flexible substrate, an adhesive layer, a metal layer, a driving unit, and a modulating unit. The adhesive layer is disposed on the flexible substrate. The metal layer is disposed on the adhesive layer. The driving unit is disposed on the adhesive layer. The modulating unit is disposed on the adhesive layer. The manufacturing method of the electronic device includes the following steps: providing a carrier substrate; forming a first metal layer on the carrier substrate; providing a flexible substrate, and combining the flexible substrate and the carrier substrate; removing the carrier substrate; and providing a modulating unit, and disposing the modulating unit on the flexible substrate. The electronic device and the manufacturing method thereof of the embodiments of the disclosure may make the electronic device having the modulating unit applicable to a non-planar structure.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes a substrate, a first metal layer, an insulating layer, a first conductor, an electronic assembly and a transistor circuit die. The first metal layer is disposed on the substrate. The insulating layer is disposed on the substrate. The first conductor is formed in a first via of the insulating layer. The electronic assembly is disposed on the substrate and electrically connected to the first metal layer through the first conductor. The transistor circuit die is electrically connected to the first metal layer.

Abstract: A manufacturing method of an electronic device is provided, which includes following steps. A substrate is provided. A conductive layer is formed on the substrate. A circuit structure is formed on the conductive layer. The circuit structure is patterned to form at least one opening. The at least one opening has a stepped profile. An electronic device is also provided.

Abstract: An electronic device including a substrate, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a bonding structure, and a chip is provided. The first conductive layer is disposed on the substrate. The first insulating layer is disposed on the first conductive layer and has a first via. The second conductive layer is disposed on the first insulating layer, wherein the second conductive layer is electrically connected to the first conductive layer through the first via. The second insulating layer is disposed on the second conductive layer and has a second via. The bonding structure is disposed on the second insulating layer, wherein the bonding structure is electrically connected to the second conductive layer through the second via. The chip is disposed on the bonding structure.

Abstract: An electronic device including a substrate, a conductive layer, a first driving component, and an electronic component is provided. The conductive layer is disposed on the substrate. A thickness of the conductive layer is between 0.5 ?m and 12 ?m. The first driving component is disposed on the conductive layer. The electronic component is disposed on the substrate and electrically connected to the first driving component.

Abstract: The disclosure provides an electronic device including a substrate, at least one conductive composite structure, and an electronic element. The at least one conductive composite structure is disposed on the substrate. The at least one conductive composite structure includes a first metal layer, a second metal layer, and a third metal layer. The second metal layer is located between the first metal layer and the third metal layer, and the thickness of the second metal layer ranges from 0.5 ?m to 12 ?m. The electronic element is disposed on the at least one conductive composite structure and bonded to the at least one conductive composite structure.

Abstract: An electronic device including a substrate, a first metal pattern, a first insulating pattern, and a second metal pattern is provided. The first metal pattern is disposed on the substrate. The first insulating pattern is disposed on the first metal pattern. The second metal pattern is disposed on the first metal pattern and the first insulating pattern. The second metal pattern includes a first contact portion and a second contact portion. In a cross-sectional view, the first contact portion and the second contact portion are in contact with the first metal pattern, and the first insulating pattern is in contact with the first metal pattern and the second metal pattern between the first contact portion and the second contact portion.

Abstract: An electronic device includes a carrier, a plurality of electronic elements and a connecting terminal. The carrier has at least one bonding pad. The electronic elements are disposed on the carrier, and each of the electronic elements includes a substrate. A distance between two adjacent substrates of the electronic elements is not less than 300 ?m. The connecting terminal is disposed between one of the substrate and the carrier. One of the electronic elements are electrically connected to the at least one bonding pad via the connecting terminal.

Abstract: An electronic device includes a substrate, a driving element, a conductive layer, and an electronic element is provided. The driving element is disposed on the substrate. The conductive layer is disposed on the substrate, wherein there is a first distance (B) between the driving element and an edge of the conductive layer. The electronic element is disposed on the conductive layer and is electrically connected to the driving element, wherein there is a second distance (A) between the electronic element and the edge of the conductive layer, and the first distance (B) is greater than the second distance (A).

Abstract: An electronic device includes a carrier having at least one bonding pad, a plurality of electronic elements disposed on the carrier and one of the electronic elements including a substrate and at least one connecting terminal disposed between the substrate and the carrier. The electronic elements are electrically connected to the at least one bonding pad via the at least one connecting terminal.

Abstract: An electronic device is provided. The electronic device includes a first substrate, a multilayer structure, and a passivation layer. The multilayer structure is disposed on the first substrate. The multilayer structure includes a first conductive layer and a second conductive layer disposed on the first conductive layer. The passivation layer is disposed on the second conductive layer. In addition, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the passivation layer.

Abstract: The disclosure provides an electromagnetic wave adjustment apparatus includes a control circuit, a transistor circuit die and an electronic assembly. The transistor circuit die receives a control signal from the control circuit and drives the electronic assembly.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes a substrate, a first metal layer, an insulating layer, a first conductor, an electronic assembly and a transistor circuit die. The first metal layer is disposed on the substrate. The insulating layer is disposed on the substrate. The first conductor is formed in a first via of the insulating layer. The electronic assembly is disposed on the substrate and electrically connected to the first metal layer through the first conductor. The transistor circuit die is electrically connected to the first metal layer.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a multilayer electrode, a second substrate, and a liquid-crystal layer. The multilayer electrode is disposed on the first substrate, and the multilayer electrode includes a first conductive layer, a second conductive layer, and a third conductive layer. The second conductive layer is disposed on the first conductive layer. The third conductive layer is disposed on the second conductive layer. The liquid-crystal layer is disposed between the first substrate and the second substrate. In addition, the third conductive layer includes a first portion that extends beyond the second conductive layer.

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.

Abstract: The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

Abstract: An electronic device includes a carrier having at least one bonding pad, a plurality of electronic elements disposed on the carrier and one of the electronic elements including a substrate and at least one connecting terminal disposed between the substrate and the carrier. The electronic elements are electrically connected to the at least one bonding pad via the at least one connecting terminal.