Abstract: An electronic device is provided. The electronic device includes a first substrate, an insulating layer, a first conductive layer and a second conductive layer. The insulating layer is overlapped with the first substrate. The second conductive layer contacts with the first conductive layer. The first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer. The second conductive layer is disposed between the first conductive layer and the insulating layer. Moreover, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer.

Abstract: The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

Abstract: An electronic device includes a carrier, a first electronic element, and a first connecting element. The carrier has a first bonding pad, a first conductive layer, a second conductive layer and an insulating layer with a via. The first conductive layer is disposed between the first bonding pad and the insulating layer, and electrically connected to the second conductive layer through the via. The first electronic element is disposed on the carrier and has a substrate. The first connecting element is disposed between the top surface of the first bonding pad and the first electronic element and electrically connected to the first bonding pad and the first electronic element. The substrate has a through hole which is overlapped with the first bonding pad and the first connecting element. A minimum distance between the through hole and the via is greater than zero.

Abstract: The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a variable capacitor. The transistor is disposed on the substrate. The variable capacitor is disposed on the substrate and adjacent to the transistor. A material of the transistor and a material of the variable capacitor both a include a III-V semiconductor material. The electronic device of an embodiment of the disclosure may simplify manufacturing process, reduce costs, or reduce dimensions.

Abstract: An electronic device includes a carrier, a plurality of electronic elements and a connecting terminal. The carrier has at least one bonding pad. The electronic elements are disposed on the carrier, and each of the electronic elements includes a substrate. A distance between two adjacent substrates of the electronic elements is not less than 300 ?m. The connecting terminal is disposed between one of the substrate and the carrier. One of the electronic elements are electrically connected to the at least one bonding pad via the connecting terminal.

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, a PN junction assembly, and a transistor circuit. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer is formed above the second surface. The second metal layer is formed on the second surface. The PN junction assembly is disposed on the first surface and electrically connected with the first metal layer and the second metal layer. The PN junction assembly includes a variable capacitor. The transistor circuit is electrically connecting with the second metal layer.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes an insulator, a driving unit, an electronic unit, and a circuit unit. The driving unit is overlapped with the insulator. The electronic unit is overlapped with the insulator. The circuit unit is electrically connected to the driving unit. The driving unit receives a signal from the circuit unit and drives the electronic unit.

Abstract: An electronic device includes a substrate, a first metal layer, a second metal layer, a third metal layer, pads, an electronic element, and a switching element. The first metal layer, the second metal layer, and the third metal layer are disposed on the substrate. The pads are disposed on the substrate, including a first pad, a second pad, and a third pad. The electronic element is disposed on the substrate and connected to the first pad. The switching element is disposed on the substrate and connected to the second pad. The second metal layer is disposed between the first metal layer and the third metal layer. The first pad and the first metal layer belong to the same layer. The first pad is electrically connected to the second pad through the first metal layer and the third metal layer.

Abstract: An electronic device includes a carrier having at least one bonding pad, a plurality of electronic elements disposed on the carrier and one of the electronic elements including a substrate and at least one connecting terminal disposed between the substrate and the carrier. The electronic elements are electrically connected to the at least one bonding pad via the at least one connecting terminal.

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.

Abstract: An electronic device includes a substrate, a conductive structure, a first passivation layer, and an electronic component. The conductive structure is provided on the substrate and has at least one discontinuous part. The first passivation layer is provided on the conductive structure and has a first opening. The electronic component is provided on the conductive structure. The electronic component is electrically connected to the conductive structure through the first opening. The at least one discontinuous part overlaps the first opening. The electronic device in the embodiments of the disclosure may improve the problem of the intermetallic compound layer affecting the formation of the conductive member.

Abstract: The disclosure provides an electromagnetic wave adjustment apparatus includes a control circuit, a transistor circuit die and an electronic assembly. The transistor circuit die receives a control signal from the control circuit and drives the electronic assembly.

Abstract: An electronic device is provided. The electronic device includes a first substrate, an insulating layer, a first conductive layer and a second conductive layer. The insulating layer is overlapped with the first substrate. The second conductive layer contacts with the first conductive layer. The first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer. The second conductive layer is disposed between the first conductive layer and the insulating layer. Moreover, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer.

Abstract: An electronic device is provided. The electronic device includes a first substrate, a multilayer structure, and a passivation layer. The multilayer structure is disposed on the first substrate. The multilayer structure includes a first conductive layer and a second conductive layer disposed on the first conductive layer. The passivation layer is disposed on the second conductive layer. In addition, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the passivation layer.

Abstract: A modulation device includes a substrate, a metal layer, at least one driving element, and a modulation unit. The metal layer is disposed on the substrate and has at least one hole. The at least one driving element is disposed on the substrate and overlapped with the at least one hole. The modulation unit is electrically connected to the at least one driving element.

Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a flexible substrate, an adhesive layer, a metal layer, a driving unit, and a modulating unit. The adhesive layer is disposed on the flexible substrate. The metal layer is disposed on the adhesive layer. The driving unit is disposed on the adhesive layer. The modulating unit is disposed on the adhesive layer. The manufacturing method of the electronic device includes the following steps: providing a carrier substrate; forming a first metal layer on the carrier substrate; providing a flexible substrate, and combining the flexible substrate and the carrier substrate; removing the carrier substrate; and providing a modulating unit, and disposing the modulating unit on the flexible substrate. The electronic device and the manufacturing method thereof of the embodiments of the disclosure may make the electronic device having the modulating unit applicable to a non-planar structure.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes a substrate, a first metal layer, an insulating layer, a first conductor, an electronic assembly and a transistor circuit die. The first metal layer is disposed on the substrate. The insulating layer is disposed on the substrate. The first conductor is formed in a first via of the insulating layer. The electronic assembly is disposed on the substrate and electrically connected to the first metal layer through the first conductor. The transistor circuit die is electrically connected to the first metal layer.

Abstract: A manufacturing method of an electronic device is provided, which includes following steps. A substrate is provided. A conductive layer is formed on the substrate. A circuit structure is formed on the conductive layer. The circuit structure is patterned to form at least one opening. The at least one opening has a stepped profile. An electronic device is also provided.

Abstract: An electronic device including a substrate, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a bonding structure, and a chip is provided. The first conductive layer is disposed on the substrate. The first insulating layer is disposed on the first conductive layer and has a first via. The second conductive layer is disposed on the first insulating layer, wherein the second conductive layer is electrically connected to the first conductive layer through the first via. The second insulating layer is disposed on the second conductive layer and has a second via. The bonding structure is disposed on the second insulating layer, wherein the bonding structure is electrically connected to the second conductive layer through the second via. The chip is disposed on the bonding structure.

Abstract: An electronic device including a substrate, a conductive layer, a first driving component, and an electronic component is provided. The conductive layer is disposed on the substrate. A thickness of the conductive layer is between 0.5 ?m and 12 ?m. The first driving component is disposed on the conductive layer. The electronic component is disposed on the substrate and electrically connected to the first driving component.