Abstract: The present invention relates to a touch panel, a display panel, and a strengthened structure for a protective substrate, wherein the touch panel comprises: a touch sensing layer; a buffer layer disposed over the touch sensing layer and having a first surface and a second surface, wherein the second surface faces towards the touch sensing layer; and a protective substrate disposed on the first surface of the buffer layer.

Abstract: A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.

Abstract: A polish method for planarization is disclosed. The method uses a combination of a traditional oxide CMP and HSP-CMP (High Selectivity and Planarization) with a fix abrasive pad to meet the requirements of the CMP process for a device feature dimension under 0.18 micron even to 0.09 micron. By using a first polish step with a conventional polish pad and an oxide polish slurry, the non-uniformity of the over-fill thickness of the STI dielectric layer can be firstly removed and a much more smooth and uniform topography favorable for the HSP-CMP process the fix abrasive polishing pad can be obtained. Then the HSP-CMP process with the fix abrasive polishing pad can be performed to provide a planarized surface with accurate dimension control.

Abstract: A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.

Abstract: A polishing element comprising a polishing platen, a polishing sub-pad and a polishing pad is provided. The polishing sub-pad is set up over the polishing platen and the polishing pad is set up over the polishing sub-pad. A first surface of the polishing sub-pad interfaces with the polishing pad and a second surface of the polishing sub-pad interfaces with the platen. Either the first surface or the second surface of the polishing sub-pad is an undulating surface.

Abstract: A polish method for planarization is disclosed. The method uses a combination of a traditional oxide CMP and HSP-CMP (High Selectivity and Planarization) with a fix abrasive pad to meet the requirements of the CMP process for a device feature dimension under 0.18 micron even to 0.09 micron. By using a first polish step with a conventional polish pad and an oxide polish slurry, the non-uniformity of the over-fill thickness of the STI dielectric layer can be firstly removed and a much more smooth and uniform topography favorable for the HSP-CMP process the fix abrasive polishing pad can be obtained. Then the HSP-CMP process with the fix abrasive polishing pad can be performed to provide a planarized surface with accurate dimension control.