Abstract: This invention provides a method of forming an attenuating phase shifting rim type photomask and an attenuating phase shifting rim type photomask for use in projection type lithographic apparatus. The photomask is formed by exposing a layer of negative photoresist through a second surface of a transparent mask substrate having a patterned layer of attenuating phase shifting material formed on a first surface of the transparent mask substrate. The exposed and developed photoresist forms a pedestal with sloping sides. A layer of opaque material is vertically anisotropically deposited on the top of the pedestal and that part of the patterned layer of attenuating phase shifting material not shaded by the pedestal. The pedestal and opaque material formed on the top of the pedestal is then removed to complete the mask.

Abstract: An improved and new apparatus and process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the slurry concentration between the wafer and polishing pad is controlled through the application of an electric field between the wafer carrier and polishing platen, has been developed. The result is an increased polish removal rate and better uniformity of the planarization process.

Abstract: A process for preventing the formation of precipitates on a substrate surface containing Ti (e.g., TiN) after a contact layer (e.g., tungsten layer) etch back. The process involves treating the wafer with an oxygen plasma etch after the tungsten etch back to remove the precursors of a precipitate. The oxygen plasma etch is performed at temperature of about 260.degree. C. and a pressure about 4 torr.

Abstract: The surface of a partially manufactured integrated circuit is cleaned by successive immersions in a series of specially formulated baths. Metallic films deposited on surfaces that have been cleaned in this manner do not exhibit subsequent peeling or blistering and have low electrical contact resistance to the surface onto which they were deposited.