Abstract: A communication receiver includes a first signal processing circuit and a second signal processing circuit. The first signal processing circuit includes a first feedforward equalizer and a decision circuit. The first feedforward equalizer processes a received signal to generate a first equalized signal. The decision circuit performs hard decision upon the first equalized signal to generate a first symbol decision signal. The second signal processing circuit includes a second feedforward equalizer, a decision feedforward equalizer, and a first decision feedback equalizer. The second feedforward equalizer processes the first equalized signal to generate a second equalized signal. The decision feedforward equalizer processes the first symbol decision signal to generate a third equalized signal. The first decision feedback equalizer generates a second symbol decision signal according to the second equalized signal and the third equalized signal.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: An optical lens assembly includes, in order from an object side to an image side: a first lens with negative refractive power; a second lens with negative refractive power; a third lens with positive refractive power; a fourth lens with positive refractive power; a fifth lens with negative refractive power; a sixth lens with positive refractive power; wherein a distance from an object-side surface of the first lens to an image plane along an optical axis is TL, an incident angle of a chief ray on the image plane at a maximum view angle of the optical lens assembly is CRA, a focal length of the optical lens assembly is f, and the following condition is satisfied: 51.73°<TL*CRA/f<129.65°.

Abstract: A thin film transistor (TFT) is disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first adhesion layer, a gate insulting layer, a semiconductor layer, and a source electrode and a drain electrode. The gate electrode is formed on the substrate, and the gate electrode is made of silver. The first adhesion layer is formed between the substrate and the gate electrode. A gate insulating layer is formed on the gate electrode. The semiconductor layer is formed on the gate insulating layer. The source electrode and the drain electrode are formed on parts of the semiconductor layer. Accordingly, the reliable TFT is provided through having the Ag metal with low resistivity and good adhesion characteristics.

Abstract: A microelectromechanical optical display devices is provided. An optical layer is disposed on a substrate. A plurality of posts are disposed on the optical layer. A reflective layer is disposed on the plurality of posts. A flexible layer is disposed on the reflective layer, wherein edge of the reflective layer is separated from edge of the flexible layer by a distance equal to or smaller than about 2 ?m.

Abstract: An optical microelectromechanical systems (MEMS) device includes a transparent substrate with a plurality of discrete conductive lines, an dielectric layer disposed on the substrate and the conductive lines, reflective members and edge supporters. The reflective members and conductive lines are orthogonal, defining a plurality of pixel areas. Each reflective member is supported by edge supporters arranged around each pixel area and over the dielectric layer by a predetermined gap. The reflective members cover the connecting end of each edge supporter, providing protection from damage during fabrication.

Abstract: A microelectromechanical optical display devices is provided. An optical layer is disposed on a substrate. A plurality of posts are disposed on the optical layer. A reflective layer is disposed on the plurality of posts. A flexible layer is disposed on the reflective layer, wherein edge of the reflective layer is separated from edge of the flexible layer by a distance equal to or smaller than about 2 ?m.

Abstract: A Method of forming microelectromechanical optical display devices is provided. A sacrificial layer is formed above a substrate. A plurality of posts penetrating the sacrificial layer is formed. A reflective layer and a flexible layer are sequentially formed above the sacrificial layer and the posts. A photoresist layer is formed on part of the flexible layer. By performing wet etching using the photoresist layer as a mask, a portion of the flexible layer is removed to form a patterned flexible layer. The wet etching is stopped on the reflective layer. The photoresist layer is removed. By performing dry etching using the patterned flexible layer as a mask, a portion of the reflective layer is removed to form a patterned reflective layer. A mechanical layer is formed with the patterned flexible and reflective layers. The sacrificial layer is removed to release the mechanical layer.

Abstract: An optical microelectromechanical (MEMS) device includes a conductive layer, a dielectric layer, a reflective layer and a plurality of supporters between the dielectric layer and reflective layer. The supporters are tapers, or inversed tapers, having an acute angle, wherein a side surface of one of the supporters and the surface of the dielectric layer form the acute angle. Each supporter comprises a horizontal extending portion connecting to the reflective layer, such that the reflective layer is suspended from the dielectric layer by a predetermined gap.

Abstract: A thin film transistor (TFT) is disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first adhesion layer, a gate insulting layer, a semiconductor layer, and a source electrode and a drain electrode. The gate electrode is formed on the substrate, and the gate electrode is made of silver. The first adhesion layer is formed between the substrate and the gate electrode. A gate insulating layer is formed on the gate electrode. The semiconductor layer is formed on the gate insulating layer. The source electrode and the drain electrode are formed on parts of the semiconductor layer. Accordingly, the reliable TFT is provided through having the Ag metal with low resistivity and good adhesion characteristics.

Abstract: A Method of forming microelectromechanical optical display devices is provided. A sacrificial layer is formed above a substrate. A plurality of posts penetrating the sacrificial layer is formed. A reflective layer and a flexible layer are sequentially formed above the sacrificial layer and the posts. A photoresist layer is formed on part of the flexible layer. By performing wet etching using the photoresist layer as a mask, a portion of the flexible layer is removed to form a patterned flexible layer. The wet etching is stopped on the reflective layer. The photoresist layer is removed. By performing dry etching using the patterned flexible layer as a mask, a portion of the reflective layer is removed to form a patterned reflective layer. A mechanical layer is formed with the patterned flexible and reflective layers. The sacrificial layer is removed to release the mechanical layer.

Abstract: An optical microelectromechanical systems (MEMS) device includes a transparent substrate with a plurality of discrete conductive lines, an dielectric layer disposed on the substrate and the conductive lines, reflective members and edge supporters. The reflective members and conductive lines are orthogonal, defining a plurality of pixel areas. Each reflective member is supported by edge supporters arranged around each pixel area and over the dielectric layer by a predetermined gap. The reflective members cover the connecting end of each edge supporter, providing protection from damage during fabrication.

Abstract: An optical microelectromechanical (MEMS) device includes a conductive layer, a dielectric layer, a reflective layer and a plurality of supporters between the dielectric layer and reflective layer. The supporters are tapers, or inversed tapers, having an acute angle, wherein a side surface of one of the supporters and the surface of the dielectric layer form the acute angle. Each supporter comprises a horizontal extending portion connecting to the reflective layer, such that the reflective layer is suspended from the dielectric layer by a predetermined gap.