Patents by Inventor Chia-Shiang Tsai

Chia-Shiang Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical sidewall profile spacer layer and method for fabrication thereof
    Patent number: 6828186
    Abstract: A method for forming a spacer layer adjoining a substantially vertical first sidewall of a topographic feature within a microelectronic product employs an anisotropic etching of a reentrant spacer material layer formed upon the topographic feature. The spacer layer is formed at least in part with a substantially vertical second sidewall laterally separated from the substantially vertical first sidewall. The method is useful for forming spacer layers within field effect transistor devices.
    Type: Grant
    Filed: March 27, 2003
    Date of Patent: December 7, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Chiang Liu, Chi-Hsin Lo, Chia-Shiang Tsai
  • VERTICAL SIDEWALL PROFILE SPACER LAYER AND METHOD FOR FABRICATION THEREOF
    Publication number: 20040188779
    Abstract: A method for forming a spacer layer adjoining a substantially vertical first sidewall of a topographic feature within a microelectronic product employs an anisotropic etching of a reentrant spacer material layer formed upon the topographic feature. The spacer layer is formed at least in part with a substantially vertical second sidewall laterally separated from the substantially vertical first sidewall. The method is useful for forming spacer layers within field effect transistor devices.
    Type: Application
    Filed: March 27, 2003
    Publication date: September 30, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Chiang Liu, Chi-Hsin Lo, Chia-Shiang Tsai