Abstract: A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate includes a first layer over a surface of the substrate and a second layer over the first layer. A plurality of particles are disposed over the surface of the first layer. A first mega sonic agitation is performed on the substrate with applying a first mixture. A second mega sonic agitation is performed on the substrate with applying a second mixture. A frequency of the first mega sonic agitation is greater than 3 MHz, and a frequency of the second mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

Abstract: A semiconductor device includes an insulating structure, a first electrical fuse element, a second electrical fuse element, a first spacer, a second spacer and an epitaxial structure. The insulating structure is disposed in a substrate. The first electrical fuse element and the second electrical fuse element are disposed at two sides of the insulating structure. Each of the first electrical fuse element and the second electrical fuse element includes a semiconductor layer disposed on the substrate and a mask layer disposed on the semiconductor layer. The first spacer partially covers a sidewall of the semiconductor layer of the first electrical fuse element adjacent to the insulating structure. The second spacer partially covers a sidewall of the semiconductor layer of the second electrical fuse element adjacent to the insulating structure. The epitaxial structure is disposed above the insulating structure and electrically connects the two semiconductor layers.

Abstract: A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.

Abstract: The disclosure provides a light emitting device including a substrate and a plurality of sub-pixels disposed on the substrate. The plurality of sub-pixels include a first sub-pixel of a first color, a second sub-pixel of a second color different from the first color, and a third sub-pixel of the second color, wherein the first sub-pixel is disposed adjacent to the second sub-pixel, and the first sub-pixel is disposed adjacent to the third sub-pixel, and wherein a width of the second sub-pixel along a first direction is different from a width of the third sub-pixel along the first direction.

Abstract: A system for analyzing vascular sound has a data acquiring module, a feature extraction module, and a feature analyzing module. The data acquiring module is used to acquire audio data from an individual. The feature extraction module is used to extract an audio feature from the audio data. The feature analyzing module is used to analyze the audio feature and to output an abnormality classification of a vascular sound corresponding to the audio data according to an analyze result of the audio feature.

Abstract: The disclosure provides a light emitting device including a substrate and multiple pixels. The pixels are disposed on the substrate, each of the pixels includes multiple sub-pixels. Two adjacent sub-pixels are separated by a distance D, and one of the two adjacent sub-pixels has a height H. The distance and the height satisfy a relational expression: 0.3H<D?30H.

Abstract: A multi-angle ratchet wrench has a handle member, a working head, and a ratchet unit. One end of the handle member is provided with a first pivoting end and a second pivoting end and a shared space between the first and second pivoting ends, and both the first and second pivoting ends are provided with a shaft hole and a detent hole. The working end is swingably bolted in the shared space with a third pivoting end coupled with a shaft bolt, and the end edge of the third pivoting end has an arc-shaped ratchet portion. The ratchet unit is accommodated in the detent hole, which has an elastic member and a switching button, and the outer diameter of the switching button has an idling section and a toothed section facing the shared space and a limiting wall is formed closer to the toothed section.

Abstract: A semiconductor device includes a substrate, a first gate, a plurality of second gates and a resistor. The substrate is defined with an active region and a resistor region. The first gate is disposed in the active region. The first gate has a first length extending along a first direction and a second length extending along a second direction. The plurality of second gates are disposed in the resistor region. Each of the second gates has a third length extending along the first direction and a fourth length extending along the second direction. The first length is equal to the third length, and the second length is equal to the fourth length. The resistor is disposed on the plurality of second gates.

Abstract: An electronic device including a light emitting unit and a voltage comparator is provided. The voltage comparator is coupled to the light emitting unit and configured to receive a first voltage and a second voltage. When the first voltage is greater than the second voltage, the voltage comparator outputs a comparison signal having a first voltage level to turn on the light emitting unit. When the first voltage is less than the second voltage, the voltage comparator outputs a comparison signal having a second voltage level to turn off the light emitting unit.

Abstract: A control method applied in a display device is provided. The display device includes an image generator and a screen. The image generator is directed to output an output image. The screen is directed to operate in a first operation mode or a second operation mode. The screen has a first light-transmittance in the first operation mode and has a second light-transmittance in the second operation mode. The first light-transmittance is different from the second light-transmittance. In response to the screen operating in the first operation mode or the second operation mode, the image generator outputs the output image onto the screen in a light-emitting period and stops outputting the output image onto the screen in a non-light-emitting period after the light-emitting period.

Abstract: A physical unclonable function (PUF) generator including a substrate and semiconductor units is provided. Each of the semiconductor units includes an isolation structure, a first conductive line, and a second conductive line. The isolation structure is located in the substrate. The isolation structure has a first protrusion portion and a recess. The first protrusion portion and the recess are adjacent to each other. The first conductive line is located above the first protrusion portion and the recess. The second conductive line is located above the first conductive line. At least one short circuit randomly exists between at least one of the first conductive lines and at least one of the second conductive lines in at least one of the semiconductor units.

Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.

Abstract: An electronic device including a light emitting unit and a voltage comparator is provided. The voltage comparator is coupled to the light emitting unit and configured to receive a first voltage and a second voltage. When the first voltage is greater than the second voltage, the voltage comparator outputs a comparison signal having a first voltage level to turn on the light emitting unit. When the first voltage is less than the second voltage, the voltage comparator outputs a comparison signal having a second voltage level to turn off the light emitting unit.

Abstract: A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate includes a first layer over a surface of the substrate and a second layer over the first layer. A plurality of particles are disposed over the surface of the first layer. A first mega sonic agitation is performed on the substrate with applying a first mixture. A second mega sonic agitation is performed on the substrate with applying a second mixture. A frequency of the first mega sonic agitation is greater than 3 MHz, and a frequency of the second mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

Abstract: A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.

Abstract: A display device is provided, which includes a display unit and a backlight module. The backlight module is disposed corresponding to the display unit. The backlight module includes a circuit board, a plurality of light sources, a diffuser plate and an optical film. The light sources are disposed on the circuit board, the diffuser plate is disposed between the light sources and the display unit, and the optical film is disposed between the diffuser plate and the display unit. The optical film includes a micro-structure, and the micro-structure faces the light sources.

Abstract: Two or more high permeability magnetodielectric slabs in combination with electrical coils wound on each slab form a compact antenna that radiates electromagnetic signals efficiently in the omnidirectional pattern.

Abstract: A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate has a plurality of conductive nanoparticles disposed over a surface of the substrate. A first mixture is applied to remove the conductive nanoparticles. The first mixture includes an SCl solution, DI water and O3. A second mixture is applied to the photomask substrate. The second mixture includes DI wafer and H2. A temperature of the second mixture is between approximately 20° C. and 40° C. The applying of the second mixture further includes a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

Abstract: A control method applied in a display device is provided. The display device includes an image generator and a screen. The image generator is directed to output an output image. The screen is directed to operate in a first operation mode or a second operation mode. The screen has a first light-transmittance in the first operation mode and has a second light-transmittance in the second operation mode. The first light-transmittance is different from the second light-transmittance. In response to the screen operating in the first operation mode or the second operation mode, the image generator outputs the output image onto the screen in a light-emitting period and stops outputting the output image onto the screen in a non-light-emitting period after the light-emitting period.

Abstract: A display device includes a display unit, and a backlight module. The display unit includes a display area and a peripheral area. The peripheral area surrounds the display area. The backlight module is disposed corresponding to the display unit. The backlight module includes a circuit board that has a surface. The circuit board includes a plurality of light emitting units, and a plurality of edge units.