Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

Abstract: A method of forming a semiconductor device includes: forming an opening in a dielectric layer to expose an underlying conductive feature; conformally forming a first protection layer and a second protection layer in the opening; performing an anisotropic etching to remove a first portion of the second protection layer from the bottom of the opening while keeping a second portion of the second protection layer along the sidewalls of the opening; after the anisotropic etching, performing an isotropic etching to remove, from the sidewalls of the opening, an upper portion and a lower portion of the first protection layer while keeping a middle portion of the first protection layer along the sidewalls of the opening; after the isotropic etching, performing an anneal to at least partially convert the second portion of the second protection layer into an oxide; and after the anneal, filling the opening with a conductive material.

Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

Abstract: A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate includes a first layer over a surface of the substrate and a second layer over the first layer. A plurality of particles are disposed over the surface of the first layer. A first mega sonic agitation is performed on the substrate with applying a first mixture. A second mega sonic agitation is performed on the substrate with applying a second mixture. A frequency of the first mega sonic agitation is greater than 3 MHz, and a frequency of the second mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

Abstract: A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate has a plurality of conductive nanoparticles disposed over a surface of the substrate. A first mixture is applied to remove the conductive nanoparticles. The first mixture includes an SCl solution, DI water and O3. A second mixture is applied to the photomask substrate. The second mixture includes DI wafer and H2. A temperature of the second mixture is between approximately 20° C. and 40° C. The applying of the second mixture further includes a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

Abstract: A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate has a plurality of conductive nanoparticles disposed over a surface of the substrate. A first mixture is applied to remove the conductive nanoparticles. The first mixture includes an SC1 solution, DI water and O3. A second mixture is applied to the photomask substrate. The second mixture includes DI wafer and H2. A temperature of the second mixture is between approximately 20° C. and 40° C. The applying of the second mixture further includes a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

Abstract: A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.

Abstract: A method for cleaning a substrate includes receiving a photomask substrate comprising a multilayered reflective structure disposed over a surface of the photomask substrate, a capping layer disposed on the multilayered reflective structure and an absorber, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over the surface; applying a first mixture comprising a SC1 solution, a DI water and O3 to the photomask substrate to remove the conductive nanoparticles; and applying a DI water to rinse the photomask substrate. A removal rate of the conductive nanoparticles is greater than approximately 90%.

Abstract: A method for cleaning a substrate includes receiving a photomask substrate comprising a multilayered reflective structure disposed over a surface of the photomask substrate, a capping layer disposed on the multilayered reflective structure and an absorber, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over the surface; applying a first mixture comprising a SC1 solution, a DI water and O3 to the photomask substrate to remove the conductive nanoparticles; and applying a DI water to rinse the photomask substrate. A removal rate of the conductive nanoparticles is greater than approximately 90%.

Abstract: A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.

Abstract: A camera module with non-mechanical blocking and non-blocking functions in relation to external light includes a lens, a light sensing element, and a housing. The lens includes interconnected first and second cavity regions, there being gas and/or colored liquid in the first cavity region or the second cavity region. The colored liquid exists in the first cavity region during a first state and, by the application of fingertip heat, in the second cavity region only during the second state, or the reverse. The light sensing element can receive or not receive external light representing images according to user choice. The housing receives the lens and the light sensing element.

Abstract: A camera module with non-mechanical blocking and non-blocking functions in relation to external light includes a lens, a light sensing element, and a housing. The lens includes interconnected first and second cavity regions, there being gas and/or colored liquid in the first cavity region or the second cavity region. The colored liquid exists in the first cavity region during a first state and, by the application of fingertip heat, in the second cavity region only during the second state, or the reverse. The light sensing element can receive or not receive external light representing images according to user choice. The housing receives the lens and the light sensing element.

Abstract: A camera module with non-mechanical blocking and non-blocking functions in relation to external light includes a lens, a light sensing element, and a housing. The lens includes interconnected first and second cavity regions, there being gas and/or colored liquid in the first cavity region or the second cavity region. The colored liquid exists in the first cavity region during a first state and, by the application of fingertip heat, in the second cavity region only during the second state, or the reverse. The light sensing element can receive or not receive external light representing images according to user choice. The housing receives the lens and the light sensing element.

Abstract: A camera module with non-mechanical blocking and non-blocking functions in relation to external light includes a lens, a light sensing element, and a housing. The lens includes interconnected first and second cavity regions, there being gas and/or colored liquid in the first cavity region or the second cavity region. The colored liquid exists in the first cavity region during a first state and, by the application of fingertip heat, in the second cavity region only during the second state, or the reverse. The light sensing element can receive or not receive external light representing images according to user choice. The housing receives the lens and the light sensing element.

Abstract: A method of preparing a tungsten metal material with high purity, comprising the steps of (A) providing a tungsten metal powder to mix with a metal nitrate to form a mixed powder slurry; (B) ball-grinding the mixed powder slurry to obtain a uniformly mixed powder; (C) sintering the uniformly mixed powder to obtain the tungsten metal material with high purity. Accordingly, the tungsten metal material with purity more than 99.9% can be prepared, so as to prepare the tungsten metal target.

Abstract: A support device is configured to receive an electronic device. The support device includes a base, a holder rotatably mounted to the base, a semi-gear engaged with the holder, an eccentric gear including an shaft inserted into the holder, a wheel module selectively to drive one of the semi-gear and the eccentric gear to rotate, and a rotating module fixed to the wheel module; when the rotating module is rotated in a first direction, the wheel module drives the semi-gear to rotate, so as to make the holder to move up and down with respect to the base; when the rotating module is rotated in a second direction reversed to the first direction, the wheel module drive the eccentric gear to rotate, so as to drive the holder to rotate with respect to the base to adjust an angle between the holder and the base.

Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.

Abstract: Electronic device and fastening anti-theft device, for preventing theft of the electronic device and includes a lock, a screw, a bracket, and a body having a locking plate extending from a side. The locking plate includes a slot, a locking hole and a shielding piece bent and protruding from a surface of the locking plate opposite to the body of the bracket, the shielding piece crosses over the slot. The screw is fastened to the electronic device and slides along the slot, the shielding piece is used in shielding the screw, and the lock passes through the locking hole and locks the electronic device.