Abstract: A method for fabricating a CMOS-compatible MEMS device is disclosed. In particular, disclosed is a method of ordering the acts in the fabrication process of the two device types such that one device type will not be damaged by the fabrication process of the other device type. One aspect of the method involves first depositing a masking layer over a portion of a substrate layer to isolate areas for the formation of a second device type. The first device type is then fabricated on the unmasked portion of the substrate. A first device is then protected by depositing a masking layer over the first device. Next, a portion of the masking layer over the substrate is removed to expose areas to form a second device type. The second device type is then fabricated on the unmasked portion of the substrate. Finally, the masking layer over the first device type is removed.

Abstract: A method for packaging sensitive micro devices and devices formed by the method are presented. The method comprises acts of standard packaging, but with the devices' protective layers remaining intact until before sealing. Three principle acts of the method include (1) singulating the devices into individuals or subsets, (2) attaching the devices with packaging, and (3) hermetically sealing the devices. One may wire-bond the devices as well as remove the sacrificial layer before hermetically sealing. This method is especially useful for micro-electro-mechanical systems (MEMS) whereby the movable components are protected.

Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane.

Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.

Abstract: A micro-electro-mechanical system (MEMS) switch is described. The MEMS switch includes both RF-input and output transmission lines formed on a substrate. An RF armature is anchored to the substrate and is electrically connected with the RF-output transmission line. A contact is electrically connected with the RF-input transmission line. Both bias-input and output signal lines are formed on the substrate. A bias armature is anchored to the substrate and is electrically connected with the bias-input signal line. A DC/RF isolation insulator connects the bias armature with the RF armature. When a charge is introduced to the bias-input signal line, the bias armature is forced toward the bias-output signal line, thereby forcing the RF armature to connect with the contact and form an electrical circuit between the RF-input transmission line and the RF-output transmission line.

Abstract: A head electrode region for an electromechanical device is presented, comprising a first insulating layer having electrode region edges; and a head electrode, where the head electrode comprises a locking portion, with the locking portion surrounding the electrode region edges of the first insulating layer such that the head electrode is held fixed relative to the first insulating layer. The head electrode region can further comprise a top region residing above the first insulating layer and a contact region residing below the first insulator, the head electrode region further comprising a second insulating layer formed to cover at least a portion of the top region of the head electrode.

Abstract: A planarized substrate structure for an electromechanical device comprising a substrate layer; a dielectric layer formed on the substrate layer, the dielectric layer formed with conductor spaces therein, the dielectric layer further including a dielectric top surface; and a conducting layer formed as a set of conductors in the conductor spaces of the dielectric layer, the conducting layer having a conducting layer top surface, and where the dielectric top surface and the conducting layer top surface are formed in a substantially co-planar fashion to provide a planarized substrate structure.

Abstract: A micro-electro-mechanical system (MEMS) switch is described. The MEMS switch includes both RF-input and output transmission lines formed on a substrate. An RF armature is anchored to the substrate and is electrically connected with the RF-output transmission line. A contact is electrically connected with the RF-input transmission line. Both bias-input and output signal lines are formed on the substrate. A bias armature is anchored to the substrate and is electrically connected with the bias-input signal line. A DC/RF isolation insulator connects the bias armature with the RF armature. When a charge is introduced to the bias-input signal line, the bias armature is forced toward the bias-output signal line, thereby forcing the RF armature to connect with the contact and form an electrical circuit between the RF-input transmission line and the RF-output transmission line.

Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.

Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane.

Abstract: A planarized substrate structure for an electromechanical device comprising a substrate layer; a dielectric layer formed on the substrate layer, the dielectric layer formed with conductor spaces therein, the dielectric layer further including a dielectric top surface; and a conducting layer formed as a set of conductors in the conductor spaces of the dielectric layer, the conducting layer having a conducting layer top surface, and where the dielectric top surface and the conducting layer top surface are formed in a substantially co-planar fashion to provide a planarized substrate structure.

Abstract: A method for pseudo-planarization of an electromechanical device and for forming a durable metal contact on the electromechanical device and devices formed by the method are presented. The method comprises acts of depositing various layers forming a semiconductor device. Two principal aspects of the method include the formation of a planarized dielectric/conductor layer on a substrate and the formation of an electrode in an armature of a microelectromechanical switch, with the electrode formed such that it interlocks a structural layer of the armature to ensure it remains fixed to the armature over a large number of cycles.

Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane.

Abstract: A head electrode region for an electromechanical device is presented, comprising a first insulating layer having electrode region edges; and a head electrode, where the head electrode comprises a locking portion, with the locking portion surrounding the electrode region edges of the first insulating layer such that the head electrode is held fixed relative to the first insulating layer. The head electrode region can further comprise a top region residing above the first insulating layer and a contact region residing below the first insulator, the head electrode region further comprising a second insulating layer formed to cover at least a portion of the top region of the head electrode.

Abstract: A method for pseudo-planarization of an electromechanical device and for forming a durable metal contact on the electromechanical device and devices formed by the method are presented. The method comprises acts of depositing various layers forming a semiconductor device. Two principal aspects of the method include the formation of a planarized dielectric/conductor layer on a substrate and the formation of an electrode in an armature of a microelectromechanical switch, with the electrode formed such that it interlocks a structural layer of the armature to ensure it remains fixed to the armature over a large number of cycles.

Abstract: A method and apparatus are presented for providing improved reliability, yield, and performance of contacts in micro-electro-mechanical system (MEMS) switches. Specifically, the invention relates to the placement of a metal platform on the base electrodes for making a reliable and reproducible contact. The MEMS switch comprises: an actuating portion attached with a substrate; an actuating portion contact disposed on the actuating portion; and a substrate contact on top of the substrate, the substrate contact including a metal platform portion extending a height therefrom toward the actuating portion contact, wherein the actuating portion contact and the substrate contact are aligned to contact when the actuating portion is moved from a first position to a second position.