Patents by Inventor Chia-Tien Peng

Chia-Tien Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200027788
    Abstract: A method for forming a semiconductor device is provided. The method includes forming a first dielectric layer over a semiconductor substrate and forming a first conductive feature extending into the first dielectric layer. The first conductive feature has a planar top surface. The method also includes forming a second dielectric layer over the first conductive feature. The method further includes forming a hole in the second dielectric layer to expose the planar top surface of the first conductive feature. In addition, the method includes partially removing the first conductive feature from the planar top surface of the first conductive feature to form a curved surface of the first conductive feature. The method further includes forming a second conductive feature to fill the hole after the curved surface of the first conductive feature is formed.
    Type: Application
    Filed: September 27, 2019
    Publication date: January 23, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen PENG, Chia-Tien Wu, Jye-Yen CHENG
  • Publication number: 20200020625
    Abstract: Examples of an integrated circuit a having an advanced two-dimensional (2D) metal connection with metal cut and methods of fabricating the same are provided. An example method for fabricating a conductive interconnection layer of an integrated circuit may include: patterning a conductive connector portion on the conductive interconnection layer of the integrated circuit using extreme ultraviolet (EUV) lithography, wherein the conductive connector portion is patterned to extend across multiple semiconductor structures in a different layer of the integrated circuit; and cutting the conductive connector portion into a plurality of conductive connector sections, wherein the conductive connector portion is cut by removing conductive material from the metal connector portion at one or more locations between the semiconductor structures.
    Type: Application
    Filed: September 25, 2019
    Publication date: January 16, 2020
    Inventors: Chih-Liang Chen, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien Wu, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Kam-Tou Sio, Ru-Gun Liu, Shun Li Chen, Shih-Wei Peng, Tien-Lu Lin
  • Patent number: 10475703
    Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate and a first conductive feature over the semiconductor substrate. The semiconductor device also includes a first dielectric layer over the semiconductor substrate and surrounding the first conductive feature. The semiconductor device further includes a second conductive feature over the first conductive feature. A bottom surface of the second conductive feature is between a top surface of the first conductive feature and a bottom surface of the first conductive feature. In addition, the semiconductor device includes a second dielectric layer over the first dielectric layer and surrounding the second conductive feature. The semiconductor device also includes an etch stop layer between the first dielectric layer and the second dielectric layer. A top surface of the etch stop layer is between the top surface and the bottom surface of the first conductive feature.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: November 12, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-Yen Peng, Chia-Tien Wu, Jye-Yen Cheng
  • Patent number: 10468349
    Abstract: Examples of an integrated circuit a having an advanced two-dimensional (2D) metal connection with metal cut and methods of fabricating the same are provided. An example method for fabricating a conductive interconnection layer of an integrated circuit may include: patterning a conductive connector portion on the conductive interconnection layer of the integrated circuit using extreme ultraviolet (EUV) lithography, wherein the conductive connector portion is patterned to extend across multiple semiconductor structures in a different layer of the integrated circuit; and cutting the conductive connector portion into a plurality of conductive connector sections, wherein the conductive connector portion is cut by removing conductive material from the metal connector portion at one or more locations between the semiconductor structures.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: November 5, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chih-Liang Chen, Cheng-Chi Chuang, Chih-Ming Lai, Chia-Tien Wu, Charles Chew-Yuen Young, Hui-Ting Yang, Jiann-Tyng Tzeng, Kam-Tou Sio, Ru-Gun Liu, Shun Li Chen, Shih-Wei Peng, Tien-Lu Lin
  • Patent number: 9577137
    Abstract: One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.
    Type: Grant
    Filed: September 2, 2008
    Date of Patent: February 21, 2017
    Assignee: AU OPTRONICS CORPORATION
    Inventors: An-Thung Cho, Chih-Wei Chao, Chia-Tien Peng, Kun-Chih Lin
  • Patent number: 9252167
    Abstract: An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: February 2, 2016
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Jia-Hong Ye, Ssu-Hui Lu, Wu-Hsiung Lin, Chao-Chien Chiu, Ming-Hsien Lee, Chia-Tien Peng, Wei-Ming Huang
  • Patent number: 9122352
    Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: September 1, 2015
    Assignee: AU Optronics Corp.
    Inventors: An-Thung Cho, Chia-Tien Peng, Hung-Wei Tseng, Cheng-Chiu Pai, Yu-Hsuan Li, Chun-Hsiun Chen, Wei-Ming Huang
  • Publication number: 20150062088
    Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.
    Type: Application
    Filed: November 7, 2014
    Publication date: March 5, 2015
    Inventors: An-Thung Cho, Chia-Tien Peng, Hung-Wei Tseng, Cheng-Chiu Pai, Yu-Hsuan Li, Chun-Hsiun Chen, Wei-Ming Huang
  • Publication number: 20150028336
    Abstract: An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode.
    Type: Application
    Filed: September 15, 2014
    Publication date: January 29, 2015
    Inventors: Jia-Hong YE, Ssu-Hui LU, Wu-Hsiung LIN, Chao-Chien CHIU, Ming-Hsien LEE, Chia-Tien PENG, Wei-Ming HUANG
  • Patent number: 8907923
    Abstract: The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass.
    Type: Grant
    Filed: March 7, 2010
    Date of Patent: December 9, 2014
    Assignee: AU Optronics Corp.
    Inventors: An-Thung Cho, Chia-Tien Peng, Hung-Wei Tseng, Cheng-Chiu Pai, Yu-Hsuan Li, Chun-Hsiun Chen, Wei-Ming Huang
  • Patent number: 8865532
    Abstract: A method for manufacturing an active device array substrate includes providing a flexible substrate having a transistor region and a transparent region; forming a gate electrode on the transistor region; sequentially forming a dielectric layer and a semiconductor layer to cover the gate electrode and the flexible substrate; removing a part of the semiconductor layer to form a channel layer above the gate electrode and removing a thickness of the dielectric layer disposed on the transparent region, such that a portion of the dielectric layer on the gate electrode has a first thickness, and another portion of the dielectric layer on the transparent region has a second thickness less than the first thickness; respectively forming a source electrode and a drain electrode on opposite sides of the channel layer; and forming a pixel electrode electrically connected to the drain electrode.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: October 21, 2014
    Assignee: AU Optronics Corporation
    Inventors: Jia-Hong Ye, Ssu-Hui Lu, Wu-Hsiung Lin, Chao-Chien Chiu, Ming-Hsien Lee, Chia-Tien Peng, Wei-Ming Huang
  • Patent number: 8786820
    Abstract: A display device includes a substrate, a backplane, a display medium layer, a protective layer, a driving component, a flexible printed circuit (FPC) and a sealant. The backplane and the display medium layer are disposed on the lower side and the upper side of the substrate, respectively. The protective layer covers the display medium layer and prevents moisture and oxygen from permeating into the display medium layer to deteriorate its performance. The sealant surrounds the first side surface of the substrate and the second side surface of the display medium layer, and wraps at least a portion of the driving component and a portion of the FPC. Additionally, a manufacturing method of a display device is also provided.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: July 22, 2014
    Assignee: AU Optronics Corp.
    Inventors: Ho-Chien Wu, Chia-Tien Peng, Chih-Jen Hu
  • Patent number: 8772075
    Abstract: A display region and a light sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the light sensing region is formed by the same processes with the drive thin film transistor of the display region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed.
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: July 8, 2014
    Assignee: AU Optronics Corp.
    Inventors: An-Thung Cho, Jung-Yen Huang, Chia-Tien Peng, Chun-Hsiun Chen, Wei-Ming Huang
  • Patent number: 8692250
    Abstract: A method for fabricating a TFT array substrate including the following steps is provided. A substrate having a pixel region and a photosensitive region is provided. A first patterned conductive layer is formed on the substrate, wherein the first patterned conductive layer includes a gate electrode disposed in the pixel region and a first electrode disposed in the photosensitive region, and a photosensitive dielectric layer is formed on the first electrode. A gate insulation layer is formed to cover the gate electrode, the photosensitive dielectric layer and the first electrode. A patterned semiconductor layer is formed on the gate insulation layer above the gate electrode. A source electrode and a drain electrode are formed on the patterned semiconductor layer at two sides of the gate electrode, wherein the gate electrode, the source electrode, and the drain electrode constitute a TFT. A second electrode is formed on the photosensitive dielectric layer.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: April 8, 2014
    Assignee: Au Optronics Corporation
    Inventors: Ming-Hsien Lee, Ching-Chieh Shih, An-Thung Cho, Chia-Tien Peng, Kun-Chih Lin
  • Publication number: 20140084291
    Abstract: An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has at least one transistor region and at least one transparent region adjacent to each other. The gate electrode is disposed on the transistor region of the flexible substrate. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region of the flexible substrate has a second thickness. The second thickness is less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are disposed on opposite sides of the channel layer and are electrically connected to the channel layer.
    Type: Application
    Filed: September 25, 2012
    Publication date: March 27, 2014
    Applicant: AU Optronics Corporation
    Inventors: Jia-Hong YE, Ssu-Hui Lu, Wu-Hsiung Lin, Chao-Chien Chiu, Ming-Hsien Lee, Chia-Tien Peng, Wei-Ming Huang
  • Patent number: 8674964
    Abstract: An OLED display is proposed. The OLED display includes a gate driver for generating a scanning signal, a source driver for generating a data signal, and a plurality of cells arranged in an array. Each cell includes a first transistor for delivering the data signal when receiving the scanning signal, a second transistor for generating a driving current based on a voltage difference between a first supply voltage signal and the data signal, a storage capacitor coupled between the first transistor and an output end of the driving circuit, for storing the data signal, an organic light emitting diode for generating light based on the driving current, an infrared emitting layer for producing infrared ray, and an infrared sensitive layer for sensing the infrared ray reflected by an object.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: March 18, 2014
    Assignee: AU Optronics Corp.
    Inventors: Jung-yen Huang, An-thung Cho, Shih-feng Hsu, Wei-pang Huang, Chia-tien Peng
  • Patent number: 8553186
    Abstract: A display panel having a pixel region and a sensing region includes a first substrate, a second substrate and a display medium layer. A plurality of pixel structures and at least one photo-voltaic cell device are disposed on the first substrate. The pixel structures are arranged in the pixel region in array, and each of the pixel structures includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor. The photo-voltaic cell device disposed in the sensing region includes a doped semiconductor layer, a transparent electrode layer, a first type doped silicon-rich dielectric layer and a second type doped silicon-rich dielectric layer. The first type doped silicon-rich dielectric layer and the second type doped silicon-rich dielectric layer are disposed between the doped semiconductor layer and the transparent electrode layer. The display medium layer is disposed between the first substrate and the second substrate.
    Type: Grant
    Filed: October 1, 2009
    Date of Patent: October 8, 2013
    Assignee: Au Optronics Corporation
    Inventors: An-Thung Cho, Chia-Tien Peng, Wan-Yi Liu, Chun-Hsiun Chen, Wei-Ming Huang
  • Patent number: 8541750
    Abstract: A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: September 24, 2013
    Assignee: AU Optronics Corp.
    Inventors: Yu-Cheng Chen, An-Thung Cho, Ching-Sang Chuang, Chia-Tien Peng
  • Patent number: 8441715
    Abstract: An electronic paper unit including a flexible substrate, a thin film transistor layer, an electronic ink layer, a waterproof layer, and a sealant is provided. The thin film transistor layer is disposed on the flexible substrate. The electronic ink layer is disposed on a surface of the thin film transistor layer. The waterproof layer is disposed on the electronic ink layer. An edge surface of the waterproof layer and an edge surface of the electronic ink layer form a side wall where there is a first acute angle or a first obtuse angle between the side wall and the surface of the thin film transistor layer. The sealant is coated and covered on the side wall and the surface. A method for fabricating the electronic paper unit is also provided.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: May 14, 2013
    Assignee: Au Optronics Corporation
    Inventors: Chan-Wei Chang, Ho-Chien Wu, Chia-Tien Peng, Chih-Jen Hu
  • Patent number: 8415182
    Abstract: A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: April 9, 2013
    Assignee: Au Optronics Corporation
    Inventors: An-Thung Cho, Chia-Tien Peng, Yuan-Jun Hsu, Ching-Chieh Shih, Chien-Sen Weng, Kun-Chih Lin, Hang-Wei Tseug, Ming-Huang Chuang