Patents by Inventor Chia-Tsung Huang

Chia-Tsung Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11978669
    Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.
    Type: Grant
    Filed: January 4, 2022
    Date of Patent: May 7, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Lin Chuang, Chia-Hao Chang, Sheng-Tsung Wang, Lin-Yu Huang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
  • Patent number: 11955535
    Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to one embodiment includes an active region including a channel region and a source/drain region adjacent the channel region, a gate structure over the channel region of the active region, a source/drain contact over the source/drain region, a dielectric feature over the gate structure and including a lower portion adjacent the gate structure and an upper portion away from the gate structure, and an air gap disposed between the gate structure and the source/drain contact. A first width of the upper portion of the dielectric feature along a first direction is greater than a second width of the lower portion of the dielectric feature along the first direction. The air gap is disposed below the upper portion of the dielectric feature.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hao Chang, Lin-Yu Huang, Sheng-Tsung Wang, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
  • Patent number: 7992428
    Abstract: A method for ingredient analysis includes the steps of: providing a database, which stores a plurality of standard ingredient data; analyzing a sample to obtain a plurality of inspection data via a high performance liquid chromatography (HPLC) method; and respectively comparing the inspection data with the corresponding standard ingredient data to analyze all ingredients contained in the sample simultaneously. The method may be applied to a device for ingredient analysis. Thus, by cooperating the database with the HPLC method, all ingredients contained in the sample can be analyzed via at least one analysis procedure so that the procedures for ingredient analysis are simpler and quicker and the accuracy of the analysis result can be enhanced.
    Type: Grant
    Filed: August 11, 2008
    Date of Patent: August 9, 2011
    Assignee: General Standard Laboratory Co., Ltd.
    Inventors: Chia-Tsung Huang, Wei-Chuang Lin, Hsiao-Ping Chang
  • Publication number: 20090145204
    Abstract: A method for ingredient analysis includes the steps of: providing a database, which stores a plurality of standard ingredient data; analyzing a sample to obtain a plurality of inspection data via a high performance liquid chromatography (HPLC) method; and respectively comparing the inspection data with the corresponding standard ingredient data to analyze all ingredients contained in the sample simultaneously. The method may be applied to a device for ingredient analysis. Thus, by cooperating the database with the HPLC method, all ingredients contained in the sample can be analyzed via at least one analysis procedure so that the procedures for ingredient analysis are simpler and quicker and the accuracy of the analysis result can be enhanced.
    Type: Application
    Filed: August 11, 2008
    Publication date: June 11, 2009
    Inventors: Chia-Tsung HUANG, Wei-Chuang LIN, Hsiao-Ping CHANG