Abstract: A display system and a display method are provided. The display system includes a first display device, a first transmission cable and a second display device. The first transmission cable connects between the first display device and the second display device. The first display device receives a first command and an image signal. The first display device generates a first control signal according to the first command. A splicing mode of the first display device is turned on, the first display device provides the first control signal and the image signal to the second display device. The first display device displays a first image. The second display device displays a second image. A predetermined displaying image corresponding to the image signal comprises the first image and the second image.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: An example printer including: a platen roller; a bushing connected to the platen roller, the bushing having a wing extending radially from the bushing; and a lower frame including: a channel to receive the platen roller in an operational position in which the platen roller is configured to feed media for a print head of the printer; an end piece defining an end of the channel, the end piece having an opening to receive the bushing when the platen roller is in the operational position; and a tab on the end piece, the tab positioned to interface with the wing of the bushing to secure the bushing in the opening such that the platen roller is maintained in the operational position within the channel.

Abstract: An example printer including: a platen roller; a bushing connected to the platen roller, the bushing having a wing extending radially from the bushing; and a lower frame including: a channel to receive the platen roller in an operational position in which the platen roller is configured to feed media for a print head of the printer; an end piece defining an end of the channel, the end piece having an opening to receive the bushing when the platen roller is in the operational position; and a tab on the end piece, the tab positioned to interface with the wing of the bushing to secure the bushing in the opening such that the platen roller is maintained in the operational position within the channel.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: An example printer including: a platen roller; a bushing connected to the platen roller, the bushing having a wing extending radially from the bushing; and a lower frame including: a channel to receive the platen roller in an operational position in which the platen roller is configured to feed media for a print head of the printer; an end piece defining an end of the channel, the end piece having an opening to receive the bushing when the platen roller is in the operational position; and a tab on the end piece, the tab positioned to interface with the wing of the bushing to secure the bushing in the opening such that the platen roller is maintained in the operational position within the channel.

Abstract: A method of operating a synapse array includes applying a pulse sequence to a resistor coupled between a row and a column of the synapse array, and in response to the applying the pulse sequence, lowering a conductance level of the resistor. Each pulse of the pulse sequence includes a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge, and applying the pulse sequence includes increasing the pulse number while increasing one of the amplitude, the pulse width, or the trailing edge duration.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.

Abstract: A method of operating a synapse array includes applying a pulse sequence to a resistor coupled between a row and a column of the synapse array, and in response to the applying the pulse sequence, lowering a conductance level of the resistor. Each pulse of the pulse sequence includes a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge, and applying the pulse sequence includes increasing the pulse number while increasing one of the amplitude, the pulse width, or the trailing edge duration.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A method includes applying a pulse sequence to a PCM device, each pulse of the pulse sequence including a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge. Applying the pulse sequence includes increasing the pulse number while increasing at least one of the amplitude, the pulse width, or the trailing edge duration. A conductance level of the PCM device is altered in response to applying the pulse sequence.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.

Abstract: A method includes applying a pulse sequence to a PCM device, each pulse of the pulse sequence including a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge. Applying the pulse sequence includes increasing the pulse number while increasing at least one of the amplitude, the pulse width, or the trailing edge duration. A conductance level of the PCM device is altered in response to applying the pulse sequence.

Abstract: A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.

Abstract: A tandem solar cell module includes a transparent substrate, a first solar cell unit, and a second solar cell unit disposed between the transparent substrate and the first solar cell unit. The first solar cell unit includes a first electrode, a second electrode, and a first absorption layer disposed between the first electrode and the second electrode, and the second solar cell unit includes a third electrode, a fourth electrode, and a second absorption layer disposed between the third electrode and the fourth electrode, wherein the second electrode is located adjacent to the third electrode, and the positions of the second electrode, the third electrode, and the fourth electrode are corresponding to each other.

Abstract: A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.

Abstract: An example disclosed printer includes a base; a lid hingedly attached to the base movable between a closed position in which the lid is secured to the base, and an open position in which the lid is at least partially separated from the base; a cavity defined between the lid and the base, wherein the cavity is inaccessible when the lid is in the closed position and the cavity is accessible when the lid is in the open position; a ribbon positioning assembly disposed within the cavity that is pivotably attached to at least one of the lid or the base wherein the ribbon positioning assembly is configured to move between a printing position when the lid is in the closed position, and an accessible position when the lid is in the open position, wherein the ribbon positioning assembly comprises a ribbon tensioning mechanism.