Patents by Inventor Chia-Wen Li

Chia-Wen Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240218388
    Abstract: Provided is a promoter sequence induced by methyl jasmonate. Also provided are an expression cassette, a recombinant vector and a recombinant cell comprising the promoter sequence. In addition, further provided is a method for producing an exogenous protein using the expression vector, and in particular a method for producing a human elastin in a rice cell using the expression vector. Further provided is a skin care composition comprising the exogenous protein. The composition is not cytotoxic to HaCaT cell lines and CCD966SK cell lines, and can increase the expression levels of water retention-related genes hHAS2, hHAS3, hAQP3 and hFLG in a cell, thereby improving the water retention and barrier functions in the cell as well as having a broad application prospect.
    Type: Application
    Filed: March 14, 2024
    Publication date: July 4, 2024
    Inventors: Chun Chi Hsia, Zhong Liu, Man Mei Li, Chia Wen Li, Pi Hung Liao, Yu Chun Wu
  • Patent number: 10497557
    Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port, thereby improving wafer manufacturing quality.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: December 3, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shao-Yen Ku, Tsai-Pao Su, Wen-Chang Tsai, Chia-Wen Li, Yu-Yen Hsu
  • Patent number: 9881816
    Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a mixture of ozone and one of an acid and a base. Exemplary acids and bases include HCl, HF, and NH4OH. The cleaning mixture may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: January 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Wen Li, Bo-Wei Chou, Shao-Yen Ku, Chen Ming-Jung
  • Publication number: 20150255270
    Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port, thereby improving wafer manufacturing quality.
    Type: Application
    Filed: May 20, 2015
    Publication date: September 10, 2015
    Inventors: Shao-Yen Ku, Tsai-Pao Su, Wen-Chang Tsai, Chia-Wen Li, Yu-Yen Hsu
  • Patent number: 9064807
    Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port. The wet cleaning procedure prior removes internal contaminants of the dry process procedure from the semiconductor substrate and thereby improves wafer manufacturing quality.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: June 23, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shao-Yen Ku, Tsai-Pao Su, Wen-Chang Tsai, Chia-Wen Li, Yu-Yen Hsu
  • Publication number: 20140242804
    Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port. The wet cleaning procedure prior removes internal contaminants of the dry process procedure from the semiconductor substrate and thereby improves wafer manufacturing quality.
    Type: Application
    Filed: February 27, 2013
    Publication date: August 28, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Shao-Yen Ku, Tsai-Pao Su, Wen-Chang Tsai, Chia-Wen Li, Yu-Yen Hsu
  • Publication number: 20140216499
    Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a mixture of ozone and one of an acid and a base. Exemplary acids and bases include HCl, HF, and NH4OH. The cleaning mixture may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface.
    Type: Application
    Filed: February 1, 2013
    Publication date: August 7, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Wen Li, Bo-Wei Chou, Shao-Yen Ku, Chen Ming-Jung