Abstract: A reagent for enhancing a chemiluminescent reaction includes luminol or luminol derivatives, an oxidant, an electron mediator, and an enhancer. The enhancer is a nitrogen-containing fused heterocyclic compound having at least two nitrogen atoms. The present disclosure further provides a kit for enhancing a chemiluminescent reaction comprising the foregoing reagent.

Abstract: A reagent for enhancing a chemiluminescent reaction includes luminol or luminol derivatives, an oxidant, an electron mediator, and an enhancer. The enhancer is a nitrogen-containing fused heterocyclic compound having at least two nitrogen atoms. The present disclosure further provides a kit for enhancing a chemiluminescent reaction comprising the foregoing reagent.

Abstract: A reagent for performing a chemiluminescent reaction includes luminol or luminol derivatives, an oxidant, an electron mediator, and an enhancer. The enhancer is a nitrogen-containing fused heterocyclic compound having at least two nitrogen atoms. The present disclosure further provides a kit for performing a chemiluminescent reaction comprising the aforesaid reagent.

Abstract: A reagent for performing a chemiluminescent reaction includes luminol or luminol derivatives, an oxidant, an electron mediator, and an enhancer. The enhancer is a nitrogen-containing fused heterocyclic compound having at least two nitrogen atoms. The present disclosure further provides a kit for performing a chemiluminescent reaction comprising the aforesaid reagent.

Abstract: A reactive black dye composition is disclosed, which comprises: (A) a reactive blue dye represented by the following formula (I) or a salt thereof; and (B) a reactive red dye or a salt thereof, a reactive yellow dye or a salt thereof, or a combination thereof. Herein, R11, X1, X2, X31, X41 and n are defined in the specification. In addition, a method for dying fibers using the aforesaid reactive black dye composition is also disclosed.

Abstract: A wafer level chip scale package (WLCSP) has a device chip, a carrier chip, an offset pad, a conductive spacing bump and a through hole via (THV). The device chip is attached to the carrier chip. The offset pad is disposed on a first surface of the device chip. The conductive spacing bump is formed on the offset pad. The through hole via includes a through hole and a hole metal layer. The through hole penetrates through the carrier chip and the device chip, and the hole metal layer is formed in the through hole and in contact with the offset pad.

Abstract: A wafer level chip scale package (WLCSP) has a device chip, a carrier chip, an offset pad, a conductive spacing bump and a through hole via (THV). The device chip is attached to the carrier chip. The offset pad is disposed on a first surface of the device chip. The conductive spacing bump is formed on the offset pad. The through hole via includes a through hole and a hole metal layer. The through hole penetrates through the carrier chip and the device chip, and the hole metal layer is formed in the through hole and in contact with the offset pad.

Abstract: A method for supporting a semiconductor wafer includes providing a device wafer to a magnetizable ring, providing a magnetizable carrier to the device wafer, and magnetizing the magnetizable ring and the magnetizable carrier to form a magnetized clamp having a magnetized ring and magnetized carrier. The magnetized clamp securely clamps the device wafer therebetween.

Abstract: A thinning method of a wafer is provided. The method includes the following steps. First, a wafer having a first surface, a second surface, and a side surface is provided, and the side surface is connected between the first surface and the second surface. At least one semiconductor device is formed on the first surface. Then, an anisotropy etching process is performed to the second surface with a mask to remove portions of the wafer while remaining the side surface thereby forming a number of grooves in the second surface and at least one reinforcing wall between the grooves. As a result, a thinned wafer is obtained.

Abstract: A method for supporting a semiconductor wafer includes providing a device wafer to a magnetizable ring, providing a magnetizable carrier to the device wafer, and magnetizing the magnetizable ring and the magnetizable carrier to form a magnetized clamp having a magnetized ring and magnetized carrier. The magnetized clamp securely clamps the device wafer therebetween.

Abstract: A thinning method of a wafer is provided. The method includes the following steps. First, a wafer having a first surface, a second surface, and a side surface is provided, and the side surface is connected between the first surface and the second surface. At least one semiconductor device is formed on the first surface. Then, an anisotropy etching process is performed to the second surface with a mask to remove portions of the wafer while remaining the side surface thereby forming a number of grooves in the second surface and at least one reinforcing wall between the grooves. As a result, a thinned wafer is obtained.

Abstract: A wafer with a eutectic bonding carrier and a method of manufacturing the same are disclosed, wherein the wafer comprises a thinned wafer, a eutectic bonding layer formed on the backside of said thinned wafer, a eutectic bonding carrier attached on said eutectic bonding layer, and a plurality of openings formed at the active side of said thinned wafer and exposing said eutectic bonding layer on the backside of said thinned wafer.