Abstract: A reagent for enhancing a chemiluminescent reaction includes luminol or luminol derivatives, an oxidant, an electron mediator, and an enhancer. The enhancer is a nitrogen-containing fused heterocyclic compound having at least two nitrogen atoms. The present disclosure further provides a kit for enhancing a chemiluminescent reaction comprising the foregoing reagent.

Abstract: A capacitive sensing car-door pre-opening warning device based on a flexible printed circuit in the present application comprises an inside door handle trim panel, an inside door handle subassembly, a flexible printed circuit, a capacitive sensing element, a capacitive-sensing processing circuit, a warning unit and a control unit wherein: the inside door handle trim panel is designed to have a through hole as well as an accommodating space; the inside door handle subassembly has a portion penetrating the through hole and linking the car door linkage and another portion covered in the accommodating space which is sensed by the capacitive sensing element; the capacitive-sensing processing circuit generates a sensing capacitance after processing for development of a warning instruction from the control unit and activation of a warning mode configured in the control unit according to the warning instruction.

Abstract: A communication device for handling a measurement comprises at least one storage device; and at least one processing circuit coupled to the at least one storage device. The at least one storage device stores, and the at least one processing circuit is configured to execute instructions of: receiving information of a measurement set for at least one slot from a base station (BS), wherein the information comprises at least one of a measurement timing configuration of the measurement set and a measurement resource of the measurement set; and performing the measurement in the at least one slot according to the measurement set, to obtain a measurement result.

Abstract: A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

Abstract: A method of operating a synapse array includes applying a pulse sequence to a resistor coupled between a row and a column of the synapse array, and in response to the applying the pulse sequence, lowering a conductance level of the resistor. Each pulse of the pulse sequence includes a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge, and applying the pulse sequence includes increasing the pulse number while increasing one of the amplitude, the pulse width, or the trailing edge duration.

Abstract: A communication device for handling a code block group (CBG)-based communication operation comprises at least one storage device; and at least one processing circuit, coupled to the at least one storage device. The at least one storage device stores, and the at least one processing circuit is configured to execute instructions of receiving an indication configuring at least one CBG-based communication operation to the communication device from a network; receiving a maximum number of CBGs in a transport block (TB) for the at least one CBG-based communication operation from the network; and performing the at least one CBG-based communication operation with the network according to the maximum number of CBGs.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A resistive random access memory (RRAM) device and a manufacturing method are provided. The RRAM device includes bottom electrodes, a resistance switching layer, insulating patterns, a channel layer and top electrodes. The resistance switching layer blanketly covers the bottom electrodes. The insulating patterns are disposed on the resistance layer and located in corresponding to locations of the bottom electrodes. The channel layer conformally covers the resistance switching layer and the insulating patterns. The channel layer has a plurality of channel regions. The channel regions are located on the resistance switching layer, and cover sidewalls of the insulating patterns. The top electrodes respectively cover at least two of the channel regions, and respectively located in corresponding to one of the insulating patterns, such that the at least two of the channel regions are located between one of the bottom electrodes and one of the top electrodes.

Abstract: An image sensor including a substrate and an image sensing element is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit a contour of the arc surface. The image sensing element has a front surface and a rear surface opposite to the front surface and has at least one bonding wire, the bonding wire is connected between the front surface and the substrate, and the rear surface of the image sensing element directly contacts the arc surface. In addition, a manufacturing method of the image sensor is also provided.

Abstract: A first base station (BS) for handling a flexible duplexing comprises at least one storage device and at least one processing circuit coupled to the at least one storage device. The at least one storage device stores, and the at least one processing circuit is configured to execute instructions of: scheduling a first cell of the first BS according to a first uplink/downlink (UL/DL) configuration, wherein the first UL/DL configuration comprises at least one flexible slot; and transmitting assistance information of the at least one flexible slot of the first cell from the first cell to a second cell.

Abstract: A topical composition comprising a synthetic compound that is an ester of sinapinic acid, a method for treating skin to provide one or more benefits selected from (a) protecting against UV radiation, (b) inhibiting DNA damage in skin cells, (c) inhibiting skin inflammation, and (d) scavenging free radicals by topically applying a composition containing the synthetic compound and a method for synthesizing the compound.

Abstract: A clean energy power supply system includes a container, a thermal insulation wall, a power-generation device, a power-conversion device, and a power-distribution device. The container has an internal space and a rear door. The thermal insulation wall is located in the internal space and adjacent to the rear door. The power-generation device is disposed in an accommodating space of the container and configured to generate a clean power. The power-conversion device is disposed in the accommodating space and configured to convert the clean power into a converted power. The power-distribution device is disposed in the accommodating space and configured to output the converted power to an external load or an external power grid. The thermal insulation wall is configured to block external airflow flowing through the rear door so as to maintain the temperature of the accommodating space.

Abstract: A method includes applying a pulse sequence to a PCM device, each pulse of the pulse sequence including a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge. Applying the pulse sequence includes increasing the pulse number while increasing at least one of the amplitude, the pulse width, or the trailing edge duration. A conductance level of the PCM device is altered in response to applying the pulse sequence.

Abstract: An image sensor including a substrate and an image sensing element is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit a contour of the arc surface. The image sensing element has a front surface and a rear surface opposite to each other and has at least one first conductive via. The rear surface of the image sensing element directly contacts the arc surface, and the first conductive via is extended from the front surface to the rear surface. In addition, a manufacturing method of the image sensor is also provided.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A dustproof bearing assembly includes a base having a shaft tube. The shaft tube has an open end with an opening. At least one bearing is coupled to an inner periphery of the shaft tube. A rotating member includes a shaft seat. A shaft includes a first end coupled to the shaft seat and a second end extending through a shaft-receiving hole of the at least one bearing. A dustproof member includes a lower face and an upper face. The lower face is spaced from the open end of the shaft tube. The dustproof member covers the opening. The upper face of the dustproof member abuts a bottom of the shaft seat. The dustproof member has an outer diameter larger than an inner diameter of the shaft tube. The dustproof bearing assembly can be used in a motor.

Abstract: A capacitive sensing car-door pre-opening warning device based on a flexible printed circuit in the present application comprises an inside door handle trim panel, an inside door handle subassembly, a flexible printed circuit, a capacitive sensing element, a capacitive-sensing processing circuit, a warning unit and a control unit wherein: the inside door handle trim panel is designed to have a through hole as well as an accommodating space; the inside door handle subassembly has a portion penetrating the through hole and linking the car door linkage and another portion covered in the accommodating space which is sensed by the capacitive sensing element; the capacitive-sensing processing circuit generates a sensing capacitance after processing for development of a warning instruction from the control unit and activation of a warning mode configured in the control unit according to the warning instruction.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a metal oxide layer including a plurality of conductive filament regions formed on the bottom electrode, and a plurality of top electrodes formed on the metal oxide layer, corresponding to the respective conductive filament regions. Each of the conductive filament regions has a bottom portion and a top portion. The width of the bottom portion is greater than that of the top portion. The conductive filament regions include oxygen vacancies, and regions other than the conductive filament regions in the metal oxide layer are nitrogen-containing regions.

Abstract: The present invention includes methods for effecting phenotype conversion in a cell by transfecting the cell with phenotype-converting nucleic acid. Expression of the nucleic acids results in a phenotype conversion in the transfected cell. Preferably the phenotype-converting nucleic acid is a transcriptome, and more preferably an mRNA transcriptome.