Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: A receiving box for two hearing assistance devices including a housing, a cover, and an L-shaped hinge is provided. The housing includes a hinge recess, and two receiving slots independent of each other. The two receiving slots are configured to respectively receive the hearing assistance devices. The L-shaped hinge includes two opposite ends. One end is pivoted in the hinge recess, and the other end is fixed to the cover.

Abstract: A receiving box for two hearing assistance devices including a housing, a cover, and an L-shaped hinge is provided. The housing includes a hinge recess, and two receiving slots independent of each other. The two receiving slots are configured to respectively receive the hearing assistance devices. The L-shaped hinge includes two opposite ends. One end is pivoted in the hinge recess, and the other end is fixed to the cover.

Abstract: An ultraviolet resistant fabric with temperature control function includes: a base material having a concave-convex shaped first surface and an opposite second surface; and an aluminum film layer formed on the first surface, with a thickness of the aluminum film layer being smaller than a thickness of the base material. With such configuration, the fabric of the present invention acquires a heat controlling and an ultraviolet resisting functions, with the original handfeel and breathability of the fabric being maintained.

Abstract: A color filter including a substrate and a color filter layer is disclosed. The color filter layer is disposed on the substrate and includes a red photonic crystal structures, a green photonic crystal structure and a blue photonic crystal structure. The red photonic crystal structure includes a first defect resonance cavity and has multiple first holes surrounding the first defect resonance cavity. The green photonic crystal structure includes a second defect resonance cavity and has multiple second holes surrounding the second defect resonance cavity. The blue photonic crystal structure includes a third defect resonance cavity and has multiple third holes surrounding the third defect resonance cavity. Wherein, the hole diameter of the first holes is less than the hole diameter of the second holes, and the hole diameter of the second holes is less than the hole diameter of the third holes.

Abstract: A color filter including a substrate and a color filter layer is disclosed. The color filter layer is disposed on the substrate and includes a red photonic crystal structures, a green photonic crystal structure and a blue photonic crystal structure. The red photonic crystal structure includes a first defect resonance cavity and has multiple first holes surrounding the first defect resonance cavity. The green photonic crystal structure includes a second defect resonance cavity and has multiple second holes surrounding the second defect resonance cavity. The blue photonic crystal structure includes a third defect resonance cavity and has multiple third holes surrounding the third defect resonance cavity. Wherein, the hole diameter of the first holes is less than the hole diameter of the second holes, and the hole diameter of the second holes is less than the hole diameter of the third holes.