Patents by Inventor Chia-Yang LIAO
Chia-Yang LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240075345Abstract: a resistance adjustable power generator having: an operating unit that receives commands of a user and is able to switch the resistance adjustable power generator to either a release mode or a resistance mode; a resistance generating unit that receive the commands from the operating unit and provides adjustable multiple levels of resistance to a connecting device, with the resistance generating unit having a resistance controlling center, multiple resistance generator, and an output controlling center; and a battery electrically connects to the resistance generating unit.Type: ApplicationFiled: August 28, 2023Publication date: March 7, 2024Inventors: Chia Yu Lo, Kuang-Yang Liao
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Patent number: 11854825Abstract: A method of forming a semiconductor device includes forming a dummy gate over a substrate, forming dielectric materials over a top surface and sidewalls of the dummy gate, and replacing the dummy gate with a gate structure. The dummy gate has a first width located a first distance away from the substrate, a second width located a second distance away from the substrate, and a third width located a third distance away from the substrate. The second distance is less than the first distance. The second width is less than the first width. The third distance is less than the second distance. The third width is greater than the second width.Type: GrantFiled: April 18, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chang-Yin Chen, Chai-Wei Chang, Bo-Feng Young, Chia-Yang Liao
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Publication number: 20230387245Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Liang LU, Chang-Yin CHEN, Chih-Han LIN, Chia-Yang LIAO
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Publication number: 20220246441Abstract: A method of forming a semiconductor device includes forming a dummy gate over a substrate, forming dielectric materials over a top surface and sidewalls of the dummy gate, and replacing the dummy gate with a gate structure. The dummy gate has a first width located a first distance away from the substrate, a second width located a second distance away from the substrate, and a third width located a third distance away from the substrate. The second distance is less than the first distance. The second width is less than the first width. The third distance is less than the second distance. The third width is greater than the second width.Type: ApplicationFiled: April 18, 2022Publication date: August 4, 2022Inventors: Chang-Yin Chen, Chai-Wei Chang, Bo-Feng Young, Chia-Yang Liao
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Patent number: 11309189Abstract: A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.Type: GrantFiled: July 30, 2020Date of Patent: April 19, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chang-Yin Chen, Chai-Wei Chang, Chia-Yang Liao, Bo-Feng Young
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Publication number: 20220028997Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.Type: ApplicationFiled: April 29, 2021Publication date: January 27, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Liang Lu, Chang-Yin Chen, Chih-Han Lin, Chia-Yang Liao
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Patent number: 10943977Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.Type: GrantFiled: December 11, 2019Date of Patent: March 9, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jie-Cheng Deng, Yi-Jen Chen, Chia-Yang Liao
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Publication number: 20200357655Abstract: A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.Type: ApplicationFiled: July 30, 2020Publication date: November 12, 2020Inventors: Chang-Yin Chen, Chai-Wei Chang, Chia-Yang Liao, Bo-Feng Young
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Patent number: 10741408Abstract: A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.Type: GrantFiled: April 15, 2019Date of Patent: August 11, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chang-Yin Chen, Chai-Wei Chang, Chia-Yang Liao, Bo-Feng Young
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Publication number: 20200111873Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.Type: ApplicationFiled: December 11, 2019Publication date: April 9, 2020Inventors: Jie-Cheng Deng, Yi-Jen Chen, Chia-Yang Liao
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Patent number: 10510840Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.Type: GrantFiled: June 20, 2017Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jie-Cheng Deng, Yi-Jen Chen, Chia-Yang Liao
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Publication number: 20190244830Abstract: A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.Type: ApplicationFiled: April 15, 2019Publication date: August 8, 2019Inventors: Chang-Yin Chen, Chai-Wei Chang, Chia-Yang Liao, Bo-Feng Young
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Patent number: 10262870Abstract: A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.Type: GrantFiled: November 16, 2015Date of Patent: April 16, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chang-Yin Chen, Chai-Wei Chang, Chia-Yang Liao, Bo-Feng Young
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Publication number: 20180366545Abstract: A semiconductor device is disclosed. The semiconductor device includes a channel region, extending along a direction, that has a U-shaped cross-section; a gate dielectric layer wrapping around the channel region; and a gate electrode wrapping around respective central portions of the gate dielectric layer and the channel region.Type: ApplicationFiled: June 20, 2017Publication date: December 20, 2018Inventors: Jie-Cheng DENG, Yi-Jen Chen, Chia-Yang Liao
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Publication number: 20170005165Abstract: A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.Type: ApplicationFiled: November 16, 2015Publication date: January 5, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chang-Yin CHEN, Chai-Wei CHANG, Chia-Yang LIAO, Bo-Feng YOUNG