Abstract: A computer system receives, by a first application, a plurality of shared media items. After receiving the plurality of shared media items, the computer system receives, via one or more input devices, a request to search a media library of a second application that is different from the first application for media items in the media library that meet search criteria. In response to receiving the request to search the media library, the computer system concurrently displays, via a display generation component, two or more media items that meet the search criteria. The two or more media items include: one or more media items from the media library of the second application that meet the search criteria, and one or more of the shared media items that are not stored within the media library of the second application and that meet the search criteria.

Abstract: Embodiments utilize a two layer inner spacer structure during formation of the inner spacers of a nano-FET device. The materials of the first inner spacer layer and second inner spacer layer can be selected to have a mismatch in their coefficients of thermal expansion (CTE). As the structure cools after deposition, the inner spacer layer which has a larger CTE will exhibit compressive stress on the other inner spacer layer, however, because the two layers have a common interface, the layer with the smaller CTE will exhibit a counter acting tensile stress.

Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: Antigen binding molecules (ABMs) comprising Fab domains in non-native configurations, ABM conjugates comprising the ABMs and cytotoxic or cytostatic agents, pharmaceutical compositions containing the ABMs and ABM conjugates, methods of using the ABMs, ABM conjugates and pharmaceutical compositions for treating cancer, nucleic acids encoding the ABMs, cells engineered to express the ABMs, and methods of producing ABMs.

Abstract: A sweep voltage generator and a display panel are provided. The sweep voltage generator includes an output node, a current generating block and a voltage regulating block. The output node is used to provide a sweep signal. The current generating block is coupled to the output node, includes a detection path for detecting an output load variation on the output node, and adjusts the sweep signal provided by the output node based on the output load variation. The voltage regulating block is coupled to the output node for regulating a voltage of the output node.

Abstract: A device a includes a substrate, two source/drain (S/D) features over the substrate, and semiconductor layers suspended over the substrate and connecting the two S/D features. The device further includes a dielectric layer disposed between two adjacent layers of the semiconductor layers and an air gap between the dielectric layer and one of the S/D features, where a ratio between a length of the air gap to a thickness of the first dielectric layer is in a range of 0.1 to 1.0.

Abstract: The present invention provides multispecific antigen-binding molecules that bind both a T-cell antigen (e.g., CD3) and a target antigen (e.g., a tumor associated antigen, a viral or bacterial antigen), and which include a single polypeptide chain that is multivalent (e.g., bivalent) with respect to T-cell antigen binding, and uses thereof.

Abstract: A method includes providing a fin extending from a substrate, the fin including a plurality of semiconductor channel layers, and where a gate is disposed over the fin. A first spacer layer is deposited over the gate and over the fin in a source/drain region. The first spacer layer has a first etch rate. A second spacer layer is deposited over the first spacer layer. The second spacer layer has a second etch rate less than the first etch rate. The plurality of semiconductor channel layers are removed from the source/drain region to form a trench having a funnel shape. After forming the trench, inner spacers are formed along a sidewall surface of the trench. In various embodiments, lateral sidewall surfaces of each semiconductor channel layer of the plurality of semiconductor channel layers is substantially free of an inner spacer material.

Abstract: The present disclosure provides interferon receptor agonists with improved safety profiles and therapeutic indices. The interferon receptor agonists are attenuated through masking and/or reduced receptor binding as compared to a wild-type interferon. IFN receptor agonists optionally further comprise a targeting moiety, e.g., a targeting moiety that recognizes a tumor- or immune cell-associated antigen and directs the interferon receptor agonist to a tumor site and/or tumor-reactive immune cells. The disclosure further provides pharmaceutical compositions comprising the interferon receptor agonists, and methods of use of the interferon receptor agonists in therapy, as well as nucleic acids encoding the interferon receptor agonists, recombinant cells that express the interferon receptor agonists and methods of producing the interferon receptor agonists.

Abstract: A semiconductor-on-insulator (SOI) structure and a method for forming the SOI structure. The method includes forming a first dielectric layer on a first semiconductor layer. A second semiconductor layer is formed over an etch stop layer. A cleaning solution is provided to a first surface of the first dielectric layer. The first dielectric layer is bonded under the second semiconductor layer in an environment having a substantially low pressure. An index guiding layer may be formed over the second semiconductor layer. A third semiconductor layer is formed over the second semiconductor layer. A distance between a top of the third semiconductor layer and a bottom of the second semiconductor layer varies between a maximum distance and a minimum distance. A planarization process is performed on the third semiconductor layer to reduce the maximum distance.

Abstract: An integrated circuit (IC) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. The source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. The front-side interconnection structure is on a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. The backside dielectric layer is on a backside of the source epitaxial structure and a backside of the drain epitaxial structure and has an air gap therein. The backside via extends through the backside dielectric layer to a first one of the source epitaxial structure and the drain epitaxial structure.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: A method for assessing drug-resistant Klebsiella pneumoniae includes the following steps. A test sample is provided, wherein the test sample includes a Klebsiella pneumoniae. A spectrum analysis step is performed, wherein the test sample is detected by a mass spectrometry method so as to obtain a target mass spectrum data. An assessing step for drug-resistant Klebsiella pneumoniae is performed, wherein the target mass spectrum data is analyzed so as to assess whether the Klebsiella pneumoniae is resistant to a carbapenem antibiotic or a colistin or not. When the Klebsiella pneumoniae is resistant to the carbapenem antibiotic, the target mass spectrum data includes a first anti-carbapenem feature mark, and when the Klebsiella pneumoniae is resistant to the colistin, the target mass spectrum data includes a first anti-colistin feature mark.

Abstract: The present disclosure provides interferon receptor agonists with improved safety profiles and therapeutic indices. The interferon receptor agonists are attenuated through masking and/or reduced receptor binding as compared to a wild-type interferon. IFN receptor agonists optionally further comprise a targeting moiety, e.g., a targeting moiety that recognizes a tumor- or immune cell-associated antigen and directs the interferon receptor agonist to a tumor site and/or tumor-reactive immune cells. The disclosure further provides pharmaceutical compositions comprising the interferon receptor agonists, and methods of use of the interferon receptor agonists in therapy, as well as nucleic acids encoding the interferon receptor agonists, recombinant cells that express the interferon receptor agonists and methods of producing the interferon receptor agonists.

Abstract: The present invention provides multispecific antibodies that bind to EGFR and CD28 (EGFR×CD28) as well as anti-EGFR antibodies. Such antibodies may be combined with a further therapeutic agent such as an anti-PD1 antibody. Methods for treating cancers (e.g., EGFR-expressing cancer) by administering the antibodies (e.g., and combinations thereof with anti-PD1) are also provided. The EGFR×CD28 antibodies of the present invention embody a tumor-targeted immunotherapeutic modality combined with PD-1 inhibition. These bispecific antibodies bind a tumor-specific antigen (TSA) (EGFR) with one arm and the co-stimulatory receptor, CD28, on T-cells with the other arm. Combination therapy with PD-1 inhibitors specifically potentiated intra-tumoral T cell activation, promoting an effector memory-like T cell phenotype without systemic cytokine secretion in a variety of syngeneic and human tumor xenograft models.

Abstract: In some embodiments, an electronic device displays a plurality of content items in a messaging conversation. In some embodiments, the electronic device displays user interfaces associated with one or more content items in a messaging conversation.

Abstract: The present disclosure generally relates to user interfaces for electronic devices, including user interfaces for viewing and interacting with media items.

Abstract: A computer system receives, by a first application, a plurality of shared media items and receives a request to display a view of a media application that includes the media library that includes a first plurality of media items. The computer system displays a collection of media items in the media application that are selected based on first criteria. Displaying the collection of media items includes displaying a second plurality of media items selected from the media library based on the first criteria. In accordance with a determination that a first shared media item from a set of one or media items that have not been added to the media library meets display criteria, the display criteria including the first criteria, displaying the first shared media item in the collection of media items concurrently with the second plurality of media items.

Abstract: The present disclosure provides IL2 proproteins comprising an IL2 moiety that is masked with an IL2R? moiety and a protease-cleavable linker, configured such that the IL2R? moiety is released from the IL2 moiety upon the action of a protease, e.g., at a tumor site. The IL2 proproteins optionally further comprise a targeting moiety, e.g., a targeting moiety that recognizes a tumor-associated antigen and directs the proprotein to a tumor site. The disclosure further provides pharmaceutical compositions comprising the IL2 proproteins, and methods of use of the IL2 proproteins in therapy, as well as nucleic acids encoding the IL2 proproteins, recombinant cells that express the IL2 proproteins and methods of producing the IL2 proproteins.