Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.

Abstract: A display driving device includes an emission circuit and a positive feedback circuit. The emission circuit is coupled to a first node. The emission circuit emits light according to a forward signal, a reverse signal, and a voltage level of the first node. The forward signal and the reverse signal are inversed phase of each other. The positive feedback circuit discharges the first node according to sweep signal.

Abstract: A driving circuit includes a driving transistor, first to third capacitors and first to second switching transistors. The driving transistor is electrically connected between a first driving voltage terminal and a second driving voltage terminal, configured to control a driving current flowing through a light emitting element. The first switching transistor and the first capacitor are connected in series between a first terminal and a gate terminal of the driving transistor. A first terminal of the second capacitor is electrically connected to a gate terminal of the first switching transistor. The second switching transistor is electrically connected between a second terminal of the second capacitor and a first reference voltage terminal. The third capacitor is electrically connected between a gate terminal of the second switch transistor and a sweep signal line.

Abstract: A display driving device includes a light emitting circuit, a control circuit, and a boost circuit. The light emitting circuit is coupled to a first node. The light emitting circuit is configured to emit according to a first emission signal, a second emission signal, and a voltage level at the first node. The control circuit is coupled to a second node. The control circuit is configured to charge the second node according to a sweep signal and the first emission signal. The boost circuit is configured to boost and charge a voltage level at the second node to the first node. The voltage level at the first node is greater than the voltage level at the second node.

Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.

Abstract: The present invention provides compositions and methods for treating cancer and inhibiting cytokine release syndrome (CRS). The methods of the present invention comprise administering to a subject in need thereof a therapeutically effective amount of a CD40 antagonist or a CAR-T cell expressing a CD40 antagonist in combination with a therapeutically effective amount of a CD3 multispecific antigen binding molecule.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: Semiconductor devices and methods of fabricating the semiconductor devices are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin as an initial step in forming a multilayer source/drain region. The opening is formed into a parasitic channel region of the fin. Once the opening has been formed, a source/drain barrier material is deposited using a bottom-up deposition process at the bottom of the opening to a level below the multilayer stack. A multilayer source/drain region is formed over the source/drain barrier material. A stack of nanostructures is formed by removing sacrificial layers of the multilayer stack, the multilayer source/drain region being electrically coupled to the stack of nanostructures.

Abstract: According to one example, a method includes performing a first etching process on a fin stack to form a first recess and a second recess at a first depth, the first recess and the second recess on opposite sides of a gate structure that is on the fin stack. The method further includes depositing inner spacers within the first recess and the second recess. The method further includes, after depositing the inner spacers, performing a second etching process to extend a depth of the first recess to a second depth. The method further includes forming a dummy contact region within the first recess, forming a source structure within the first recess on the dummy contact region, and forming a drain structure within the second recess.

Abstract: Antigen binding molecules (ABMs) comprising Fab domains in non-native configurations, ABM conjugates comprising the ABMs and cytotoxic or cytostatic agents, pharmaceutical compositions containing the ABMs and ABM conjugates, methods of using the ABMs, ABM conjugates and pharmaceutical compositions for treating cancer, nucleic acids encoding the ABMs, cells engineered to express the ABMs, and methods of producing ABMs.

Abstract: A display device includes an emission circuit, a first control circuit and a second control circuit. The emission circuit is coupled to a first node and is configured to emit light based on an emission signal and a voltage level of the first node. The first control circuit is configured to charge the first node based on a sweep signal and the emission signal. The second control circuit is configured to discharge the first node based on the sweep signal and the emission signal.

Abstract: The present disclosure relates to chimeric heavy chain constant domains having reduced effector function. Also disclosed are recombinant polypeptides comprising such chimeric heavy chain constant domains, including antibodies such as multispecific antibodies, fusion proteins, and other recombinant proteins. Nucleic acids encoding such recombinant polypeptides are also disclosed, as well as cells expressing such recombinant polypeptides and pharmaceutical compositions comprising such recombinant polypeptides.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers connected to the source/drain feature, a gate structure between adjacent channel layers and wrapping the channel layers, and an inner spacer between the source/drain feature and the gate structure and between adjacent channel layers. The source/drain feature has a first interface with a first channel layer of the channel layer. The first interface has a convex profile protruding towards the first channel layer.

Abstract: In some embodiments, an electronic device displays a plurality of content items in a messaging conversation. In some embodiments, the electronic device displays user interfaces associated with one or more content items in a messaging conversation.

Abstract: The present disclosure relates to IL 12 receptor agonists with improved therapeutic profiles.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, a method includes receiving a workpiece comprising a substrate, an active region protruding from the substrate, and a dummy gate structure disposed over a channel region of the active region. The method also includes forming a trench in a source/drain region of the active region, forming a sacrificial structure in the trench, conformally depositing a dielectric film over the workpiece, performing a first etching process to etch back the dielectric film to form fin sidewall (FSW) spacers extending along sidewalls of the sacrificial structure, performing a second etching process to remove the sacrificial structure to expose the trench, forming an epitaxial source/drain feature in the trench such that a portion of the epitaxial source/drain feature being sandwiched by the FSW spacers, and replacing the dummy gate structure with a gate stack.

Abstract: Methods and semiconductor structures are provided. A method according to the present disclosure includes receiving a workpiece that includes a first gate structure disposed over a first active region, a second gate structure disposed over a second active region, a first gate spacer extending along a sidewall of the first gate structure and disposed at least partially over a top surface of the first active region, a second gate spacer extending along a sidewall of the second gate structure and disposed at least partially over a top surface of the second active region, and a source/drain feature. The method also includes treating a portion of the first gate spacer and a portion of the second gate spacer with a remote radical of hydrogen or oxygen, removing the treated portions, and after the removal, depositing a metal fill material over the source/drain feature.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.

Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.

Abstract: The present disclosure relates to IL2 agonists with improved therapeutic profiles.