Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.

Abstract: Methods and semiconductor structures are provided. A method according to the present disclosure includes receiving a workpiece that includes a first gate structure disposed over a first active region, a second gate structure disposed over a second active region, a first gate spacer extending along a sidewall of the first gate structure and disposed at least partially over a top surface of the first active region, a second gate spacer extending along a sidewall of the second gate structure and disposed at least partially over a top surface of the second active region, and a source/drain feature. The method also includes treating a portion of the first gate spacer and a portion of the second gate spacer with a remote radical of hydrogen or oxygen, removing the treated portions, and after the removal, depositing a metal fill material over the source/drain feature.

Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.

Abstract: An active device substrate including a substrate, a transfer wire, a first insulating layer, a second insulating layer, a first semiconductor pattern, a second semiconductor pattern, a first connection structure, a second connection structure, a first gate, a second gate, a third insulating layer, a first source/drain, and a second source/drain is provided. The first insulating layer is located above the transfer wire. The second insulating layer is located above the first insulating layer. The first semiconductor pattern and the second semiconductor pattern are located between the first insulating layer and the second insulating layer. The first connection structure and the second connection structure are located above the second insulating layer and electrically connected to the transfer wire. The first gate and the second gate respectively overlap the first semiconductor pattern and the second semiconductor pattern.

Abstract: A method for manufacturing an integrated hull by using 3D structure type fiber clothes and 3D vacuum infusion process includes: sequentially stacking at least one first fiber cloth, at least one core material and at least one second fiber cloth on a mold; deploying structural materials on the second fiber cloth; stacking the third fiber clothes to cover the structure materials and a part of the second fiber cloth, whereby the first fiber cloth, the core material, the second fiber cloth and the third fiber clothes are formed to a lamination; determining a pipe arrangement of vacuum pipes and first and second resin pipes; deploying a vacuum bag on the lamination and covering the first and second resin pipes and the vacuum pipe; executing the 3D vacuum infusion process; curing the resin; and executing a mold release process to complete an integrated hull.

Abstract: A composite cleat includes a first component and a second component. The first component is made of a first material and is formed a first connecting portion extended along a longitudinal axis and a ground contact surface disposed at one end thereof. The second component is made of a second material different from the first material and is formed a second connecting portion fixedly connected with the first connecting portion and a threaded stud disposed at one end thereof.

Abstract: A manufacturing method of a halogen-free flame-retardant thermoplastic braided fiber reinforced polymer composite board, comprising steps of: preparing a recycled material containing a halogen-free flame-retardant thermoplastic braided fiber reinforced polymer composite; adding a polymer base material to the recycled material to form a core layer material and extruding the core layer material with a low shear extruder; hot pressing the core layer material by rollers to obtain a recycled fiber core layer; preparing a reinforcement layer containing a fiber material or a fabric with pores; and stacking and hot pressing the recycled fiber core layer and the reinforcement layer.

Abstract: A composite cleat includes a first component and a second component. The first component is made of a first material and is formed a first connecting portion extended along a longitudinal axis and a ground contact surface disposed at one end thereof. The second component is made of a second material different from the first material and is formed a second connecting portion fixedly connected with the first connecting portion and a threaded stud disposed at one end thereof.

Abstract: A manufacturing method of a halogen-free flame-retardant thermoplastic braided fiber reinforced polymer composite board, comprising steps of: preparing a recycled material containing a halogen-free flame-retardant thermoplastic braided fiber reinforced polymer composite; adding a polymer base material to the recycled material to form a core layer material and extruding the core layer material with a low shear extruder; hot pressing the core layer material by rollers to obtain a recycled fiber core layer; preparing a reinforcement layer containing a fiber material or a fabric with pores; and stacking and hot pressing the recycled fiber core layer and the reinforcement layer.

Abstract: A method for manufacturing an integrated hull by using 3D structure type fiber clothes and 3D vacuum infusion process includes: sequentially stacking at least one first fiber cloth, at least one core material and at least one second fiber cloth on a mold; deploying structural materials on the second fiber cloth; stacking the third fiber clothes to cover the structure materials and a part of the second fiber cloth, whereby the first fiber cloth, the core material, the second fiber cloth and the third fiber clothes are formed to a lamination; determining a pipe arrangement of vacuum pipes and first and second resin pipes; deploying a vacuum bag on the lamination and covering the first and second resin pipes and the vacuum pipe; executing the 3D vacuum infusion process; curing the resin; and executing a mold release process to complete an integrated hull.

Abstract: An organic light-emitting display panel and a fabrication method thereof include using an inkjet printing process to form the organic emission material of the display panel and providing a specific design of the relative position of the spacer and the planarization layer with ink-repellent material such that the spacer can be effectively fixed on the array substrate without falling from the planarization layer.

Abstract: An organic light-emitting display panel and a fabrication method thereof include using an inkjet printing process to form the organic emission material of the display panel and providing a specific design of the relative position of the spacer and the planarization layer with ink-repellent material such that the spacer can be effectively fixed on the array substrate without falling from the planarization layer.