Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: A method and apparatus for block partition are disclosed. If a cross-colour component prediction mode is allowed, the luma block and the chroma block are partitioned into one or more luma leaf blocks and chroma leaf blocks. If a cross-colour component prediction mode is allowed, whether to enable an LM (Linear Model) mode for a target chroma leaf block is determined based on a first split type applied to an ancestor chroma node of the target chroma leaf block and a second split type applied to a corresponding ancestor luma node. According to another method, after the luma block and the chroma block are partitioned using different partition tress, determine whether one or more exception conditions to allow an LM for a target chroma leaf block are satisfied when the chroma partition tree uses a different split type, a different partition direction, or both from the luma partition tree.

Abstract: An electronic device includes a metal back cover, a metal frame, a first antenna module and a second antenna module. The metal frame includes a first and a second disconnection portion, a first and a second connection portion. The first and the second connection portion are connected to the metal back cover. The first disconnection portion is separated from the first connection portion, the metal back cover and the second disconnection portion to form a first slot. The second disconnection portion is connected to the second connection portion and is separated from the metal back cover to form a second slot. The first antenna module is connected to the first disconnection portion, and forms a first antenna path. The second antenna module is connected to the second disconnection portion, and forms a second and a third antenna path with the second disconnection portion and the metal back cover.

Abstract: An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.

Abstract: An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.

Abstract: An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions.

Abstract: Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls.

Abstract: Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls.

Abstract: Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls.

Abstract: Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls.

Abstract: An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions.

Abstract: A method of preparing carbon nanotube/polymer composite having electromagnetic interference (EMI) shielding effectiveness is disclosed, which includes: dispersing multi-walled carbon nanotubes (MWCNT) in an organic solvent such as N,N-Dimethylacetamide (DMAc); dissolving monomers such as methyl methacrylate (MMA) and an initiator such as 2,2-azobisisobutyronitrile (AIBN) in the MWCNT dispersion; and polymerizing the monomers in the resulting mixture at an elevated temperature such as 120° C. to form a MWCNT/PMMA composite. The composite is coated onto a PET film, and the coated PET film alone or a stack of multiple coated PET films can be applied as an EMI shielding material.

Abstract: A method of preparing carbon nanotube/polymer composite having electromagnetic interference (EMI) shielding effectiveness is disclosed, which includes: dispersing multi-walled carbon nanotubes (MWCNT) in an organic solvent such as N,N-Dimethylacetamide (DMAc); dissolving monomers such as methyl methacrylate (MMA) and an initiator such as 2,2-azobisisobutyronitrile (AIBN) in the MWCNT dispersion; and polymerizing the monomers in the resulting mixture at an elevated temperature such as 120° C. to form a MWCNT/PMMA composite. The composite is coated onto a PET film, and the coated PET film alone or a stack of multiple coated PET films can be applied as an EMI shielding material.

Abstract: A method of preparing carbon nanotube/polymer composite having electromagnetic interference (EMI) shielding effectiveness is disclosed, which includes: dispersing multi-walled carbon nanotubes (MWCNT) in an organic solvent such as N,N-Dimethylacetamide (DMAc); dissolving monomers such as methyl methacrylate (MMA) and an initiator such as 2,2-azobisisobutyronitrile (AIBN) in the MWCNT dispersion; and polymerizing the monomers in the resulting mixture at an elevated temperature such as 120° C. to form a MWCNT/PMMA composite. The composite is coated onto a PET film, and the coated PET film alone or a stack of multiple coated PET films can be applied as an EMI shielding material.

Abstract: The present invention provides a modified carbon nanotube having —C(O)—R? or —C(O)—R—COOH covalently bounded to a surface of carbon nanotube, wherein R? is C1-C26 alkyl or C2-C26 alkenyl, and R is C1-C26 alkylene or C2-C26 alkenylene. The present invention also discloses a carbon nanotubes/polymer composite having electromagnetic interference shielding effectiveness, which contains 0.1-10% of modified carbon nanotubes, based on the weight of the polymer. The present invention further provides methods for preparing the modified carbon nanotubes and the composite.

Abstract: A method of preparing carbon nanotube/polymer composite is disclosed, which includes: forming a layer of TiO2 on carbon nanotubes (CNTs) with a precursor of TiO2 by a sol-gel or hydrothermal method, a weight ratio of the TiO2 precursor to CNT being 0.3:1 to 30:1; modifying the TiO2-coated CNTs with a coupling agent to improve the affinity thereof to a polymer; and mixing a polymer with the resulting modified TiO2-coated CNTs to form a TiO2-coated CNT reinforced polymer composite. The mechanical properties of the polymer composite can be enhanced by using an additional fiber reinforcement material.

Abstract: A method of preparing carbon nanotube/polymer composite having electromagnetic interference (EMI) shielding effectiveness is disclosed, which includes: dispersing multi-walled carbon nanotubes (MWCNT) in an organic solvent such as N,N-Dimethylacetamide (DMAc); dissolving monomers such as methyl methacrylate (MMA) and an initiator such as 2,2-azobisisobutyronitrile (AIBN) in the MWCNT dispersion; and polymerizing the monomers in the resulting mixture at an elevated temperature such as 120° C. to form a MWCNT/PMMA composite. The composite is coated onto a PET film, and the coated PET film alone or a stack of multiple coated PET films can be applied as an EMI shielding material.

Abstract: A method of preparing carbon nanotube/polymer composite is disclosed, which includes: forming a layer of TiO2 on carbon nanotubes (CNTs) with a precursor of TiO2 by a sol-gel or hydrothermal method, a weight ratio of the TiO2 precursor to CNT being 0.3:1 to 30:1; modifying the TiO2-coated CNTs with a coupling agent to improve the affinity thereof to a polymer; and mixing a polymer with the resulting modified TiO2-coated CNTs to form a TiO2-coated CNT reinforced polymer composite. The mechanical properties of the polymer composite can be enhanced by using an additional fiber reinforcement material.