Patents by Inventor Chia-Yi Su

Chia-Yi Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240279617
    Abstract: Assay and systems are provided that include use of cells and/or organoid for patient diagnosis, drug development, and personalized medicine, including for diagnosis and treatment of cancer and associated diseases and disorders. In one aspect, systems and methods include applying a phase-specific and force-guided polymerization of a biomaterial, wherein the polymerization comprises a nucleation phase and an elongation phase; thereby, producing a model.
    Type: Application
    Filed: June 6, 2022
    Publication date: August 22, 2024
    Inventors: Deok-Ho Kim, Chia-Yi Su, Alice Burchett, Marcus Williams
  • Patent number: 10068836
    Abstract: An integrated circuit includes a substrate, a first inter-layer dielectric (ILD) layer over the substrate, and a gate strip having a first width formed in the first ILD layer. A conductive strip having a second width is provided on the gate strip, with the second width being greater than the first width. The conductive strip is positioned so that the gate strip is covered and a portion of the conductive strip extends over a top surface of the first ILD adjacent the gate strip. A second ILD layer is provided over the conductive strip and the first ILD layer with a contact plug extending through the second ILD layer to provide electrical contact to the conductive strip.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: September 4, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Chih Ho, Chih-Ping Chao, Hua-Chou Tseng, Chun-Hung Chen, Chia-Yi Su, Alex Kalnitsky, Jye-Yen Cheng, Harry-Hak-Lay Chuang
  • Publication number: 20170213780
    Abstract: An integrated circuit includes a substrate, a first inter-layer dielectric (ILD) layer over the substrate, and a gate strip having a first width formed in the first ILD layer. A conductive strip having a second width is provided on the gate strip, with the second width being greater than the first width. The conductive strip is positioned so that the gate strip is covered and a portion of the conductive strip extends over a top surface of the first ILD adjacent the gate strip. A second ILD layer is provided over the conductive strip and the first ILD layer with a contact plug extending through the second ILD layer to provide electrical contact to the conductive strip.
    Type: Application
    Filed: April 7, 2017
    Publication date: July 27, 2017
    Inventors: Chien-Chih HO, Chih-Ping CHAO, Hua-Chou TSENG, Chun-Hung CHEN, Chia-Yi SU, Alex KALNITSKY, Jye-Yen CHENG, Harry-Hak-Lay CHUANG
  • Patent number: 9620421
    Abstract: A method of forming an integrated circuit structure includes providing a gate strip in an inter-layer dielectric (ILD) layer. The gate strip comprises a metal gate electrode over a high-k gate dielectric. An electrical transmission structure is formed over the gate strip and a conductive strip is formed over the electrical transmission structure. The conductive strip has a width greater than a width of the gate strip. A contact plug is formed above the conductive strip and surrounded by an additional ILD layer.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: April 11, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Chih Ho, Chih-Ping Chao, Hua-Chou Tseng, Chun-Hung Chen, Chia-Yi Su, Alex Kalnitsky, Jye-Yen Cheng, Harry-Hak-Lay Chuang
  • Publication number: 20120119306
    Abstract: A method of forming an integrated circuit structure includes providing a gate strip in an inter-layer dielectric (ILD) layer. The gate strip comprises a metal gate electrode over a high-k gate dielectric. An electrical transmission structure is formed over the gate strip and a conductive strip is formed over the electrical transmission structure. The conductive strip has a width greater than a width of the gate strip. A contact plug is formed above the conductive strip and surrounded by an additional ILD layer.
    Type: Application
    Filed: November 17, 2010
    Publication date: May 17, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Chih HO, Chih-Ping CHAO, Hua-Chou TSENG, Chun-Hung CHEN, Chia-Yi SU, Alex KALNITSKY, Jye-Yen CHENG, Harry-Hak-Lay CHUANG
  • Publication number: 20080122029
    Abstract: An inductor utilizing a pad metal layer. The inductor comprises a metal spiral, a metal bridge, and a metal interconnect. The metal bridge is formed with the pad metal layer and a plurality of vias and has one end connected to the metal spiral. The metal interconnect is connected to the other end of the metal bridge. In addition, resistivity of the pad metal layer is lower than that of the metal spiral.
    Type: Application
    Filed: November 3, 2006
    Publication date: May 29, 2008
    Inventors: Sung-Hsiung Wang, Chih-Ping Chao, Chia-Yi Su