Abstract: An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.

Abstract: A light source device, including a first light source, providing a first light beam in a first time period of a first period; and a second light source, providing a second light beam in a second time period of the first period, is provided. The first light beam and the second light beam have the same color temperature. The first light beam and the second light beam are emitted alternately in the first period, and a color rendering index of mixed light of the first light beam and the second light beam is greater than or equal to 85.

Abstract: A variable aperture module includes a blade assembly, a positioning element, a driving part and pressing structures. The blade assembly includes movable blades disposed around an optical axis to form a light passable hole with an adjustable size. Each movable blade has a positioning hole and a movement hole adjacent thereto. The positioning element includes positioning structures disposed respectively corresponding to the positioning holes. The driving part includes a rotation element disposed corresponding to the movement holes and is rotatable with respect to the positioning element. The pressing structures are disposed respectively corresponding to the movable blades. Each pressing structure is at least disposed into at least one of the positioning hole and the movement hole of the corresponding movable blade. Each pressing structure at least presses against at least one of the corresponding one positioning structure and the rotation element.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A method and apparatus for block partition are disclosed. If a cross-colour component prediction mode is allowed, the luma block and the chroma block are partitioned into one or more luma leaf blocks and chroma leaf blocks. If a cross-colour component prediction mode is allowed, whether to enable an LM (Linear Model) mode for a target chroma leaf block is determined based on a first split type applied to an ancestor chroma node of the target chroma leaf block and a second split type applied to a corresponding ancestor luma node. According to another method, after the luma block and the chroma block are partitioned using different partition tress, determine whether one or more exception conditions to allow an LM for a target chroma leaf block are satisfied when the chroma partition tree uses a different split type, a different partition direction, or both from the luma partition tree.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.

Abstract: A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted into the etch stop layer. A capping layer and a device layer are formed on the etch stop layer. A handle substrate is bonded to the device layer. The sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms are removed from the handle substrate.

Abstract: A device die including a first semiconductor die, a second semiconductor die, an anti-arcing layer and a first insulating encapsulant is provided. The second semiconductor die is stacked over and electrically connected to the first semiconductor die. The anti-arcing layer is in contact with the second semiconductor die. The first insulating encapsulant is disposed over the first semiconductor die and laterally encapsulates the second semiconductor die. Furthermore, methods for fabricating device dies are provided.

Abstract: Quantum dot is a semiconductor nanomaterial. The quantum dot includes a core constituted of InP, a first shell constituted of ZnSe, a second shell constituted of ZnS, and a gradient alloy intermediate layer. The core is wrapped by the first shell. The first shell is wrapped by the second shell, and the first and second shells have different materials. The gradient alloy intermediate layer is between the core and the first shell. The gradient layer includes an alloy constituted of In, P, Zn and Se. A content of the In and P gradually decreases from the core to the first shell. A content of the Zn and Se gradually increases from the core to the first shell. A particle size of the quantum dot is greater than or equal to 11 nm. The quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.

Abstract: Quantum dot is a semiconductor nanomaterial. The quantum dot includes a core constituted of InP, a first shell constituted of ZnSe, a second shell constituted of ZnS, and a gradient alloy intermediate layer. The core is wrapped by the first shell. The first shell is wrapped by the second shell, and the first and second shells have different materials. The gradient alloy intermediate layer is between the core and the first shell. The gradient layer includes an alloy constituted of In, P, Zn and Se. A content of the In and P gradually decreases from the core to the first shell. A content of the Zn and Se gradually increases from the core to the first shell. A particle size of the quantum dot is greater than or equal to 11 nm. The quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.

Abstract: Provided is a backlight unit including a light source, an encapsulation layer, and a green quantum dot film. The light source emits a blue light. The encapsulation layer encapsulates the light source. The encapsulation layer includes red phosphors and yellow phosphors. The green quantum dot film is disposed above the light source and the encapsulation layer. The blue light is transmitted through the encapsulation layer and the green quantum dot film to generate a white light. A display device including the said backlight unit is also provided.

Abstract: A backlight module includes a transparent substrate, a plurality of light sources on a surface of the transparent substrate, a reflective sheet on a side of the transparent substrate adjacent to the plurality of light sources, and at least one supporting member between the transparent substrate and the reflective sheet. The light sources are configured for emitting light. The reflective sheet is configured for reflecting light toward the transparent substrate. The at least one supporting member is configured for separating the plurality of light sources from the reflective sheet.

Abstract: A backlight module includes a substrate, a plurality of light sources on a surface of the substrate, a color conversion layer on a side of the plurality of light sources away from the substrate, and a frame between the substrate and the color conversion layer. Each light source is a light emitting diode chip configured for emitting light of a first color. The color conversion layer is configured for converting light to light of a second color. The frame surrounds the light sources. The frame includes dyes configured to absorb the light of the first color.

Abstract: A backlight module includes a substrate, a plurality of light sources on a surface of the substrate, a color conversion layer on a side of the plurality of light sources away from the substrate, and a frame between the substrate and the color conversion layer. Each light source is a light emitting diode chip configured for emitting light of a first color. The color conversion layer is configured for converting light to light of a second color. The frame surrounds the light sources. The frame includes dyes configured to absorb the light of the first color.

Abstract: A backlight module includes a transparent substrate, a plurality of light sources on a surface of the transparent substrate, a reflective sheet on a side of the transparent substrate adjacent to the plurality of light sources, and at least one supporting member between the transparent substrate and the reflective sheet. The light sources are configured for emitting light. The reflective sheet is configured for reflecting light toward the transparent substrate. The at least one supporting member is configured for separating the plurality of light sources from the reflective sheet.

Abstract: A touch control device includes a touch control circuitry and a plurality of touch control electrodes electrically coupling with the touch control circuitry. Each touch control electrode includes a plurality of micro electrodes. Each micro electrode has a first length along a first direction and a second length along a second direction which is perpendicular to the first direction. Both the first and second lengths are equal to or smaller than 80 micrometer and equal to or larger than 50 micrometers.

Abstract: A display panel includes a first substrate, a lighting device emitting a monochrome light, and a quantum dots layer. The display panel defines a plurality of pixel areas, each pixel area includes a plurality of sub-pixels for correspondingly emitting light of different colors. The quantum dots layer receives the monochrome light and converts the monochrome light to the light of different colors. The light passing through the quantum dots layer is directly emitted into the first sub-pixel, the second sub-pixel, and the third sub-pixel respectively.

Abstract: A display panel includes a lighting device, a color conversion layer, and a reflective sheet. The lighting device at least includes a first lighting part emitting a first light of a first color having a wavelength within the first wavelength range and a second lighting part emitting a second light of the first color having a wavelength within a second wavelength range. The color conversion layer includes a number of bases corresponding to the first lighting part and the second lighting part. The reflective sheet reflects a light having a wavelength within a first wavelength range and lets a light having a wavelength out of the first wavelength range to pass through. The bases corresponding to the first lighting part are doped with a number of quantum dot particles to convert the first light to a third light of a second color.