Patents by Inventor Chia-Yi Tseng
Chia-Yi Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128420Abstract: A display panel including a circuit board, a plurality of bonding pads, a plurality of light emitting devices, and a plurality of solder patterns is provided. The bonding pads are disposed on the circuit board, and each includes a first metal layer and a second metal layer. The second metal layer is located between the first metal layer and the circuit board. The first metal layer includes an opening overlapping the second metal layer. A material of the first metal layer is different from a material of the second metal layer. The light emitting devices are electrically bonded to the bonding pads. Each of the solder patterns electrically connects one of the light emitting devices and one of the bonding pads. The solder patterns each contact the second metal layer through the opening of the first metal layer of one of the bonding pads to form a eutectic bonding.Type: ApplicationFiled: December 6, 2022Publication date: April 18, 2024Applicant: AUO CorporationInventors: Chia-Hui Pai, Tai-Tso Lin, Wen-Hsien Tseng, Wei-Chieh Chen, Kuan-Yi Lee, Chih-Chun Yang
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Publication number: 20240103342Abstract: A variable aperture module includes a blade assembly, a positioning element, a driving part and pressing structures. The blade assembly includes movable blades disposed around an optical axis to form a light passable hole with an adjustable size. Each movable blade has a positioning hole and a movement hole adjacent thereto. The positioning element includes positioning structures disposed respectively corresponding to the positioning holes. The driving part includes a rotation element disposed corresponding to the movement holes and is rotatable with respect to the positioning element. The pressing structures are disposed respectively corresponding to the movable blades. Each pressing structure is at least disposed into at least one of the positioning hole and the movement hole of the corresponding movable blade. Each pressing structure at least presses against at least one of the corresponding one positioning structure and the rotation element.Type: ApplicationFiled: November 21, 2022Publication date: March 28, 2024Applicant: LARGAN PRECISION CO., LTD.Inventors: Chia-Cheng TSAI, Hsiu-Yi HSIAO, Ming-Ta CHOU, Te-Sheng TSENG
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Publication number: 20240088307Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.Type: ApplicationFiled: November 20, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Yu-Chih Huang, Chih-Hao Chang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
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Patent number: 11929318Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.Type: GrantFiled: May 10, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
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Publication number: 20220359395Abstract: A method includes following steps. An image of a wafer is captured. A first contact region in the captured image at which the first conductive contact is rendered is identified. A second contact region in the captured image at which the second conductive contact is rendered is identified. The second conductive contact is determined as not shorted to the first conductive contact, in response to the identified second contact region in the captured image is darker than the identified first contact region in the captured image.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Hsung HO, Chia-Yi TSENG, Chih-Hsun LIN, Kun-Tsang CHUANG, Yung-Lung HSU
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Patent number: 11430733Abstract: A method includes capturing an image of a wafer, the wafer comprising a first conductive contact over an active region of the wafer and a second conductive contact over a shallow trench isolation (STI) region abutting the active region; identifying a brightness of a first contact region in the captured image at which the first conductive contact is rendered; identifying a brightness of a second contact region in the captured image at which the second conductive contact is rendered; and in response to the identified brightness of the first contact region in the captured image being substantially the same as the identified brightness of the second contact region in the captured image, determining that the second conductive contact is shorted to the first conductive contact.Type: GrantFiled: October 23, 2020Date of Patent: August 30, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Hsung Ho, Chia-Yi Tseng, Chih-Hsun Lin, Kun-Tsang Chuang, Yung-Lung Hsu
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Publication number: 20210043566Abstract: A method includes capturing an image of a wafer, the wafer comprising a first conductive contact over an active region of the wafer and a second conductive contact over a shallow trench isolation (STI) region abutting the active region; identifying a brightness of a first contact region in the captured image at which the first conductive contact is rendered; identifying a brightness of a second contact region in the captured image at which the second conductive contact is rendered; and in response to the identified brightness of the first contact region in the captured image being substantially the same as the identified brightness of the second contact region in the captured image, determining that the second conductive contact is shorted to the first conductive contact.Type: ApplicationFiled: October 23, 2020Publication date: February 11, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Hsung HO, Chia-Yi TSENG, Chih-Hsun LIN, Kun-Tsang CHUANG, Yung-Lung HSU
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Patent number: 10818595Abstract: A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first feature has a first electrical resistance, the second feature has a second electrical resistance, and the first electrical resistance is different form the second electrical resistance; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.Type: GrantFiled: April 13, 2017Date of Patent: October 27, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Hsung Ho, Chia-Yi Tseng, Chih-Hsun Lin, Kun-Tsang Chuang, Yung-Lung Hsu
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Patent number: 10672777Abstract: A method for manufacturing a semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a silicon substrate. A first structure and a second structure are respectively formed on the silicon substrate and connected to each other. A limiting block is formed on the second structure and near an edge of the second structure beside the first structure. A bottom anti-reflection coating (BARC) layer is formed to blanketly cover the first structure, the second structure and the limiting block, in which the BARC layer includes a low-viscosity material, and the BARC layer overlying the top surface of the second structure has an external surface substantially parallel to the top surface of the second structure. Control gates are formed on the external surface of the BARC layer.Type: GrantFiled: February 18, 2019Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuan-Wei Su, Yung-Lung Hsu, Chih-Hsun Lin, Kun-Tsang Chuang, Chiang-Ming Chuang, Chia-Yi Tseng
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Publication number: 20190181149Abstract: A method for manufacturing a semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a silicon substrate. A first structure and a second structure are respectively formed on the silicon substrate and connected to each other. A limiting block is formed on the second structure and near an edge of the second structure beside the first structure. A bottom anti-reflection coating (BARC) layer is formed to blanketly cover the first structure, the second structure and the limiting block, in which the BARC layer includes a low-viscosity material, and the BARC layer overlying the top surface of the second structure has an external surface substantially parallel to the top surface of the second structure. Control gates are formed on the external surface of the BARC layer.Type: ApplicationFiled: February 18, 2019Publication date: June 13, 2019Inventors: Kuan-Wei SU, Yung-Lung HSU, Chih-Hsun LIN, Kun-Tsang CHUANG, Chiang-Ming CHUANG, Chia-Yi TSENG
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Patent number: 10211214Abstract: A semiconductor device having semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a silicon substrate. A first structure and a second structure are respectively disposed on the silicon substrate and connected to each other. A limiting block is disposed on the second structure and near an edge of the second structure beside the first structure. A bottom anti-reflection coating (BARC) layer blanketly covering the first structure, the second structure and the limiting block, in which the BARC layer comprises a low-viscosity material, and the BARC layer overlying the top surface of the second structure has an external surface substantially parallel to the top surface of the second structure. Control gates are disposed on the external surface of the BARC layer.Type: GrantFiled: March 13, 2017Date of Patent: February 19, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuan-Wei Su, Yung-Lung Hsu, Chih-Hsun Lin, Kun-Tsang Chuang, Chiang-Ming Chuang, Chia-Yi Tseng
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Publication number: 20180261609Abstract: A semiconductor device having semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a silicon substrate. A first structure and a second structure are respectively disposed on the silicon substrate and connected to each other. A limiting block is disposed on the second structure and near an edge of the second structure beside the first structure. A bottom anti-reflection coating (BARC) layer blanketly covering the first structure, the second structure and the limiting block, in which the BARC layer comprises a low-viscosity material, and the BARC layer overlying the top surface of the second structure has an external surface substantially parallel to the top surface of the second structure. Control gates are disposed on the external surface of the BARC layer.Type: ApplicationFiled: March 13, 2017Publication date: September 13, 2018Inventors: Kuan-Wei SU, Yung-Lung HSU, Chih-Hsun LIN, Kun-Tsang CHUANG, Chiang-Ming CHUANG, Chia-Yi TSENG
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Patent number: 10037927Abstract: A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first and second features are electrically isolated from each other; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.Type: GrantFiled: May 5, 2017Date of Patent: July 31, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Hsung Ho, Chia-Yi Tseng, Chih-Hsun Lin, Kun-Tsang Chuang, Yung-Lung Hsu
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Publication number: 20180151458Abstract: A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first feature has a first electrical resistance, the second feature has a second electrical resistance, and the first electrical resistance is different form the second electrical resistance; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.Type: ApplicationFiled: April 13, 2017Publication date: May 31, 2018Inventors: Yen-Hsung Ho, Chia-Yi Tseng, Chih-Hsun Lin, Kun-Tsang Chuang, Yung-Lung Hsu
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Publication number: 20180151459Abstract: A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first and second features are electrically isolated from each other; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.Type: ApplicationFiled: May 5, 2017Publication date: May 31, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Hsung HO, Chia-Yi TSENG, Chih-Hsun LIN, Kun-Tsang CHUANG, Yung-Lung HSU