Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: The present invention demonstrated a Cre-loxP based cofilin-1 transgenic animal model to address the pathophysiological role of over-expressed cofilin-1 on systemic development.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas. A first drive-in process is then performed to drive fluorine in the fluorine-containing gas into the gate dielectric. The method further includes performing a second treatment process on the gate dielectric, wherein the second treatment process is performed using the fluorine-containing gas, and performing a second drive-in process to drive fluorine in the fluorine-containing gas into the gate dielectric. After the second drive-in process, conductive layers are formed to fill the trench.

Abstract: An emulsion component includes a polyglycerol ester-base emulsifier and a polyglycerol ester-based coemulsifier. The polyglycerol ester-base emulsifier has a hydrophilic-lipophilic balance value greater than 10, and is formed by reacting a first polyglycerol having a degree of polymerization ranging from 4 to 20 with a first acid. The polyglycerol ester-based coemulsifier has a hydrophilic-lipophilic balance value not greater than 10, and is formed by reacting a polyol with a second acid. The polyol is selected from the group consisting of a glycerol and a second polyglycerol having a degree of polymerization ranging from 2 to 10. In addition, a weight ratio of the polyglycerol ester-based emulsifier and the polyglycerol ester-based coemulsifier ranges from 0.75 to 8. An oil-in-water sunscreen product including the emulsion component and an oil-in-water sunscreen lotion including the emulsion component are also provided.

Abstract: A device for providing passive, wireless, in vivo detection of post-surgical infection in a surgical implant or prosthesis is provided. The device includes at least one magnetoelastic-based sensor associated with the implant or prosthesis. At least one magnetoelastic-based sensor is a differential sensor. Also, the differential sensor comprises a reference element and a sensing element.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

Abstract: A gas injector used for semiconductor equipment includes a housing shell, a rotating main shaft and a gas output distribution unit. The rotating main shaft is covered with the housing shell, and includes a plurality of magnetic fluid seals and a plurality of gas transmission tubes. The gas output distribution unit is coupled to a top end of the rotating main shaft, the gas output distribution unit being connected to a ceiling and a susceptor. The gas output distribution unit includes a plurality of boards spaced at intervals between the ceiling and the susceptor, thereby resulting in a plurality of gas output layers for outputting corresponding reaction gases.

Abstract: A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

Abstract: A patch of material is configured to be applied to human tissue. The patch includes a film comprising poly(L-lactide) and poly(#-caprolactone). The film is configured to self-deploy between a first position and a second position in response to a temperature. The film is applied to the human tissue when the patch of material is in the second position, in which the film has a planar configuration.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of isolation structures on the semiconductor substrate, and a plurality of blocking structures disposed directly over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of isolation structures in a semiconductor substrate and forming a plurality of blocking structures over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures. The method further includes forming a photoresist layer on the semiconductor substrate, exposing the photoresist layer to a light source through a mask, and developing the photoresist layer to create a patterned photoresist feature that covers a first region of a portion of the semiconductor substrate between two of the isolation structures. The portion of the semiconductor substrate having a second region that is exposed.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of isolation structures in a semiconductor substrate and forming a plurality of blocking structures over the isolation structures. The blocking structures have a lower reflectivity than the isolation structures. The method further includes forming a photoresist layer on the semiconductor substrate, exposing the photoresist layer to a light source through a mask, and developing the photoresist layer to create a patterned photoresist feature that covers a first region of a portion of the semiconductor substrate between two of the isolation structures. The portion of the semiconductor substrate having a second region that is exposed.

Abstract: A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

Abstract: A gas injector used for semiconductor equipment includes a housing shell, a rotating main shaft and a gas output distribution unit. The rotating main shaft is covered with the housing shell, and includes a plurality of magnetic fluid seals and a plurality of gas transmission tubes. The gas output distribution unit is coupled to a top end of the rotating main shaft, the gas output distribution unit being connected to a ceiling and a susceptor. The gas output distribution unit includes a plurality of boards spaced at intervals between the ceiling and the susceptor, thereby resulting in a plurality of gas output layers for outputting corresponding reaction gases.

Abstract: A cage for facilitating fusion of bones, such as vertebrae, or fusion of adjacent bone surfaces is disclosed. In one form, the cage includes a plurality of spaced apart walls comprising a biodegradable polymeric material (e.g., polycaprolactone); an osteoconductive mineral coating (e.g., a calcium compound) on at least a portion of the walls; and a bioactive agent (e.g., a bone morphogenetic protein) associated with the polymeric material and/or the coating. The bioactive agent is present in amount that induces ossification between the bones or adjacent bone surfaces. The cage may also include a fixation plate connected to at least one of the walls.