Abstract: An embodiment in accordance with the present invention provides a system and method for determining cardiac events. The system and method include using an imaging modality to obtain a cardiac image of the subject. The image is then used to determine the subject's systolic, post-systolic, and early diastolic strain peaks. Additionally, a strain rate index (SRI) value is computed for the subject using the systolic, post-systolic, and early diastolic strain peaks. The SRI value can then be used to determine a level of risk of cardiac failure. Further, a likelihood of atrial fibrillation can also be determined. The SRI value and risk of cardiac event can then be used to create a treatment plan for the subject, if necessary.

Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.

Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.

Abstract: A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on a back side of the substrate, applying a laser pulse to the backside of the substrate to melt the pure dopant region, and recrystallizing the pure dopant region to form a backside doped layer. Corresponding apparatus embodiments are disclosed and claimed.

Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.

Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.

Abstract: A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on a back side of the substrate, applying a laser pulse to the backside of the substrate to melt the pure dopant region, and recrystallizing the pure dopant region to form a backside doped layer. Corresponding apparatus embodiments are disclosed and claimed.

Abstract: An image sensor pixel includes a substrate doped to have a first conductivity type. A first epitaxial layer is disposed over the substrate and doped to also have the first conductivity type. A transfer transistor gate is formed on the first epitaxial layer. An epitaxially grown photo-sensor region is disposed in the first epitaxial layer and has a second conductivity type. The epitaxially grown photo-sensor region includes an extension region that extends under a portion of the transfer transistor gate.