Abstract: A chemical-mechanical polishing method includes placing a wafer onto a top side of a polish pad disposed on a platen; introducing a slurry through at least one first hole of the platen to the top side of the polish pad; polishing the wafer with the top side of the polish pad; introducing a gas through a second hole of the platen to the top side of the polish pad after polishing the wafer, wherein an opening diameter of the at least one first hole is greater than an opening diameter of the second hole; and moving the wafer away from the polish pad while introducing the gas is being performed.

Abstract: A system for performing a Chemical Mechanical Polishing (CMP) process is provided. The system includes a CMP module configured to polish a semiconductor wafer. The system further includes a cleaning brush assembly configured to clean the semiconductor wafer. The cleaning brush includes a rotation shaft and a brush member surrounding a segment of the rotation shaft. The system also includes an agitation transducer arranged to be distant from the brush member and configured to produce an agitated cleaning liquid to clean the cleaning brush assembly.

Abstract: A device includes a rotator assembly configured to control a rotational kinetic energy of a wafer-platen based on an electrical energy input. The device further includes a controller configured to control the rotational kinetic energy of the wafer-platen, wherein a rotational velocity of the wafer-platen is either increased or decreased. The device further includes a converter configured to generate an electrical energy output of the rotator assembly based on decreased rotational kinetic energy of the wafer-platen. The device further includes an energy storage device configured to store the electrical energy outputted by the rotator assembly based on the decreased rotational kinetic energy of the wafer-platen.

Abstract: A method of controlling platen rotation includes receiving an electrical energy input at a rotator assembly, using the rotator assembly to increase a rotational kinetic energy of a platen based on the electrical energy input, using the rotator assembly to decrease the rotational kinetic energy of the platen, and generating an electrical energy output of the rotator assembly based on the decreased rotational kinetic energy of the platen.

Abstract: A system for performing a Chemical Mechanical Polishing (CMP) process is provided. The system includes a CMP module configured to polish a semiconductor wafer. The system further includes a cleaning brush assembly configured to clean the semiconductor wafer. The cleaning brush includes a rotation shaft and a brush member surrounding a segment of the rotation shaft. The system also includes an agitation transducer arranged to be distant from the brush member and configured to produce an agitated cleaning liquid to clean the cleaning brush assembly.

Abstract: A system for performing a Chemical Mechanical Polishing (CMP) process is provided. The system includes a CMP module configured to polish a semiconductor wafer. The system further includes a cleaning brush assembly configured to clean the semiconductor wafer. The cleaning brush includes a rotation shaft and a brush member surrounding a segment of the rotation shaft. The system also includes an agitation transducer arranged to be distant from the brush member and configured to produce an agitated cleaning liquid to clean the cleaning brush assembly.

Abstract: A chemical-mechanical polishing method includes placing a wafer onto a top side of a polish pad disposed on a platen; introducing a slurry through at least one first hole of the platen to the top side of the polish pad; polishing the wafer with the top side of the polish pad; introducing a gas through a second hole of the platen to the top side of the polish pad after polishing the wafer, wherein an opening diameter of the at least one first hole is greater than an opening diameter of the second hole; and moving the wafer away from the polish pad while introducing the gas is being performed.

Abstract: A method of controlling platen rotation includes receiving an electrical energy input at a rotator assembly, using the rotator assembly to increase a rotational kinetic energy of a platen based on the electrical energy input, using the rotator assembly to decrease the rotational kinetic energy of the platen, and generating an electrical energy output of the rotator assembly based on the decreased rotational kinetic energy of the platen.

Abstract: A platen rotation apparatus includes a rotator assembly coupled with a platen. The rotator assembly operates in a first mode to increase a rotational kinetic energy of the platen based on an electrical energy input, and, in a second mode, to decrease the rotational kinetic energy of the platen and generate an electrical energy output based on the decreased rotational kinetic energy of the platen. An energy storage device electrically coupled with the rotator assembly provides the electrical energy input when the rotator assembly is in the first mode and receives the electrical energy output when the rotator assembly is in the second mode.

Abstract: A platen rotation apparatus includes a rotator assembly coupled with a platen. The rotator assembly operates in a first mode to increase a rotational kinetic energy of the platen based on an electrical energy input, and, in a second mode, to decrease the rotational kinetic energy of the platen and generate an electrical energy output based on the decreased rotational kinetic energy of the platen. An energy storage device electrically coupled with the rotator assembly provides the electrical energy input when the rotator assembly is in the first mode and receives the electrical energy output when the rotator assembly is in the second mode.

Abstract: A system for performing a Chemical Mechanical Polishing (CMP) process is provided. The system includes a CMP module configured to polish a semiconductor wafer. The system further includes a cleaning brush assembly configured to clean the semiconductor wafer. The cleaning brush includes a rotation shaft and a brush member surrounding a segment of the rotation shaft. The system also includes an agitation transducer arranged to be distant from the brush member and configured to produce an agitated cleaning liquid to clean the cleaning brush assembly.

Abstract: A method for cleaning a semiconductor wafer after a Chemical Mechanical Polishing (CMP) process is provided. The method includes providing the semiconductor wafer into a cleaning module. The method further includes cleaning the semiconductor wafer by rotating a cleaning brush assembly. The method also includes applying an agitated cleaning liquid to clean the cleaning brush assembly.

Abstract: A method for cleaning a semiconductor wafer after a Chemical Mechanical Polishing (CMP) process is provided. The method includes providing the semiconductor wafer into a cleaning module. The method further includes cleaning the semiconductor wafer by rotating a cleaning brush assembly. The method also includes applying an agitated cleaning liquid to clean the cleaning brush assembly.