Abstract: An example method of threshold voltage offset calibration at memory device power up comprises: identifying a set of memory pages that have been programmed within a time window; determining, for each voltage offset bin of a plurality of voltage offset bins, a corresponding value of a data state metric produced by a memory access operation with respect to a memory page of the set of memory pages, wherein the memory access operation utilizes a voltage offset associated with the voltage offset bin; identifying a subset of the plurality of voltage offset bins, such that memory access operations performed using the corresponding voltage offsets produced respective values of the data state metric that satisfy a predefined quality criterion; selecting, among the subset of the plurality of voltage offset bins, a voltage offset bin that is associated with the lowest voltage offset; and associating the set of memory pages with the selected voltage offset bin.

Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: An example method of threshold voltage offset calibration at memory device power up comprises: identifying a set of memory pages that have been programmed within a time window; determining, for each voltage offset bin of a plurality of voltage offset bins, a corresponding value of a data state metric produced by a memory access operation with respect to a memory page of the set of memory pages, wherein the memory access operation utilizes a voltage offset associated with the voltage offset bin; identifying a subset of the plurality of voltage offset bins, such that memory access operations performed using the corresponding voltage offsets produced respective values of the data state metric that satisfy a predefined quality criterion; selecting, among the subset of the plurality of voltage offset bins, a voltage offset bin that is associated with the lowest voltage offset; and associating the set of memory pages with the selected voltage offset bin.

Abstract: An electronic package is provided, where a circuit layer and a metal layer having a plurality of openings are formed on a dielectric layer of a circuit portion to reduce the area ratio of the metal layer to the dielectric layer, so as to reduce stress concentration and prevent warping of the electronic package.

Abstract: An electronic package is provided and includes at least one conductor with a relatively large width formed on an electrode pad of an electronic element and in contact with a circuit layer. As such, when the electronic element and the circuit layer deviate in position relative to one another, the circuit layer will be still in contact with the conductor and hence electrically connected to the electronic element.

Abstract: An electronic package is provided, where a circuit layer and a metal layer having a plurality of openings are formed on a dielectric layer of a circuit portion to reduce the area ratio of the metal layer to the dielectric layer, so as to reduce stress concentration and prevent warping of the electronic package.

Abstract: The present disclosure relates generally to depot formulations of lurasidone and methods of making depot formulations of lurasidone. The depot formulations include a suspending agent and are highly syringeable.

Abstract: The present disclosure relates generally to depot formulations of lurasidone and methods of making depot formulations of lurasidone. The depot formulations include a suspending agent and are highly syringeable.